基于溶液燃烧法制备NiO/ZnO纳米线异质结紫外探测器
|
摘要
本研究采用溶液燃烧法制备NiO纳米晶材料,采用水热法制备ZnO单晶纳米线,并采用提拉法将ZnO和NiO两者复合,制备出结构简单、重复性良好的NiO/ZnO异质结结构的紫外探测器。光电流测试表明其对365nm紫外光的探测灵敏度在0.9V时达到13.3。光致发光测试表明,NiO/ZnO异质结中缺陷的减少和载流子复合的抑制是其良好性能的主要原因。结果表明,燃烧法是一种有前途的制备NiO纳米晶的方法,并可用于制备性能良好的光电器件。
Both ZnO and NiO materials are potential wide band gap semiconductors for ultraviolet(UV)photodetectors because they are abundant in resources,environmental-friendly,and physically stable.Until now only a few works on UV photodetectors based on combination of ZnO and NiO have been reported,with most of them prepared by complex and costly methods.In this regard,we proposed a simple method for the fabrication of NiO/ZnO heterojunction UV photodetector.Solution combustion method was used to prepare NiO nanomaterials onto hydrothermally grown single crystalline ZnO nanowires to form NiO/ZnO heterojunction.UV photodetector with such a simple structure showed repeatable and favorable detection sensitivity of 13.3 at 0.9 V to the 365 nm UV light.Suppression of deep level defects and carrier recombination in ZnO was suggested as the main cause for the good sensitivity according to photoluminescence results.Our results reveal that the combustion method is promising for the preparation of NiO nanomaterials for optoelectronic devices with reasonable performance.
Both ZnO and NiO materials are potential wide band gap semiconductors for ultraviolet(UV)photodetectors because they are abundant in resources,environmental-friendly,and physically stable.Until now only a few works on UV photodetectors based on combination of ZnO and NiO have been reported,with most of them prepared by complex and costly methods.In this regard,we proposed a simple method for the fabrication of NiO/ZnO heterojunction UV photodetector.Solution combustion method was used to prepare NiO nanomaterials onto hydrothermally grown single crystalline ZnO nanowires to form NiO/ZnO heterojunction.UV photodetector with such a simple structure showed repeatable and favorable detection sensitivity of 13.3 at 0.9 V to the 365 nm UV light.Suppression of deep level defects and carrier recombination in ZnO was suggested as the main cause for the good sensitivity according to photoluminescence results.Our results reveal that the combustion method is promising for the preparation of NiO nanomaterials for optoelectronic devices with reasonable performance.
引文
[1] Y. A. Goldberg. SemiconductorNear-ultraviolet Photoelectronics[J].Semiconductor Science and Technology,1999,14(7):R41~R60.
[2] J.Grant,R.Bates,W.Cunningham,et al.GaN UV Detectors for Protein Studies[J].Nuclear Instruments and Methods in Physics Research Section A:Accelerators, Spectrometers,Detectors and Associated Equipment,2006,563(1):27~30.
[3] K.Liu,M.Sakurai, M.Aono.ZnO-based Ultraviolet Photodetectors[J].Sensors,2010,10(9):8604~8634.
[4] B.D.Boruah,S.N.Majji,A.Misra.Surface Photo-charge Effect in Doped-ZnO Nanorods for High-performance Selfpowered Ultraviolet Photodetectors[J].Nanoscale,2017,9(13):4536~4543.
[5] J.W.Jung,C.C.Chueh,A.K.Jen.A Low-Temperature,Solution-Processable, Cu-DopedNickelOxideHoleTransporting Layer via the Combustion Method for HighPerformance Thin-Film Perovskite Solar Cells[J].Advanced Materials,2015,27(47):7874~7880.
[6] R.Debnath,T.Xie,B.Wen,et al.A Solution-processed High-efficiency p-NiO/n-ZnO Heterojunction Photodetector[J].RSC Advances,2015,5(19):14646~14652.
[7] H.Ohta,M.Kamiya,T.Kamiya,M.Hirano,H.Hosono.UV-detector Based on pn-heterojunction Diode Composed of Transparent Oxide Semiconductors,p-NiO/n-ZnO[J].Thin Solid Films,2003,445(2):317~321.
[8] N.Park,K.Sun,Z.Sun,et al.High Efficiency NiO/ZnO Heterojunction UV Photodiode by Sol-gel Processing[J].Journal of Materials Chemistry C,2013,1(44):7333~7338.
[9] M.Patel,H.-S.Kim,J.Kim.All Transparent Metal Oxide Ultraviolet Photodetector[J].Advanced Electronic Materials,2015,1(11):1500232.
[10] P.-N.Ni,C.-X.Shan,S.-P.Wang,et al.Self-powered Spectrum-selective Photodetectors Fabricated from n-ZnO/pNiO Core-shell Nanowire Arrays[J].Journal of Materials Chemistry C,2013,1(29):4445~4449.
[11] W.Dai,X.Pan,S.Chen,et al.Honeycomb-like NiO/ZnO HeterostructuredNanorods:PhotochemicalSynthesis,Characterization,and Enhanced UV Detection Performance[J].Journal of Materials Chemistry C,2014,2(23):4606~4614.
[12] B.Yin,Y.Qiu,H.Zhang,et al.Enhancing Performance of ZnO/NiO UV Photodetector by Piezo-phototronic Effect[J].RSC Advances,2016,6(54):48319~48323.
[13]刘爱元,张溪文,韩高荣.溶胶凝胶旋涂法制备NiO薄膜及其电致变色性能[J].材料科学与工程学报,2010,28(6):896~899.
[14] M.G.Kim,M.G.Kanatzidis,A.Facchetti,et al.Lowtemperature Fabrication of High-performance Metal Oxide Thinfilm Electronics via Combustion Processing[J]. Nature Materials,2011,10(5):382~388.
[15] J.H.Kim,P.W.Liang,S.T.Williams,et al.Highperformance and Environmentally Stable Planar Heterojunction Perovskite Solar Cells Based on a Solution-processed Copperdoped Nickel Oxide Hole-transporting Layer[J].Advanced Materials,2015,27(4):695~701.
[16] M.G.Kim,J.W.Hennek,H.S.Kim,et al.Delayed Ignition of Autocatalytic Combustion Precursors:Low-temperature Nanomaterial Binder Approach to Electronically Functional Oxide Films[J].Journal of the American Chemical Society,2012,134(28):11583~11593.
[17]冯丽莎,江庆军,叶志镇,等.非晶ZnTiSnO薄膜的溶液燃烧法制与TFT器件性能[J].材料科学与工程学报,2017,35(2):177~180.
[18] F.Jiang,W.C.Choy,X.Li,et al.Post-treatment-Free Solution-Processed Non-stoichiometric NiO(x)Nanoparticles for Efficient Hole-transport Layers of Organic Optoelectronic Devices[J].Advanced Materials,2015,27(18):2930~2937.
[19] Y.Shen,X.Yan,Z.Bai,et al.A Self-powered Ultraviolet Photodetector BasedonSolution-processedp-NiO/n-ZnO Nanorod Array Heterojunction[J].RSC Advances,2015,5(8):5976~5981.
[20] H.Long,L.Ai,S.Li,et al.Photosensitive and Temperaturedependent I-V Characteristics of p-NiO Film/n-ZnO Nanorod Array Heterojunction Diode[J]. Materials Science and Engineering:B,2014,184:44~48.
[21] S.Mohammadi,M.Zavvari.High Performance n-ZnO/p-metaloxides UV Detector Grown in Low-temperature Aqueous Solution Bath[J].Thin Solid Films,2017,626:173~177.
[22] R.-C.Wang, M.-G.Chen.Enhanced Photosensing and Tunable Luminescence from ZnO/NiO and ZnO/Ni Core-shell Nanorods[J].Sensors and Actuators B:Chemical,2013,178:
[2] J.Grant,R.Bates,W.Cunningham,et al.GaN UV Detectors for Protein Studies[J].Nuclear Instruments and Methods in Physics Research Section A:Accelerators, Spectrometers,Detectors and Associated Equipment,2006,563(1):27~30.
[3] K.Liu,M.Sakurai, M.Aono.ZnO-based Ultraviolet Photodetectors[J].Sensors,2010,10(9):8604~8634.
[4] B.D.Boruah,S.N.Majji,A.Misra.Surface Photo-charge Effect in Doped-ZnO Nanorods for High-performance Selfpowered Ultraviolet Photodetectors[J].Nanoscale,2017,9(13):4536~4543.
[5] J.W.Jung,C.C.Chueh,A.K.Jen.A Low-Temperature,Solution-Processable, Cu-DopedNickelOxideHoleTransporting Layer via the Combustion Method for HighPerformance Thin-Film Perovskite Solar Cells[J].Advanced Materials,2015,27(47):7874~7880.
[6] R.Debnath,T.Xie,B.Wen,et al.A Solution-processed High-efficiency p-NiO/n-ZnO Heterojunction Photodetector[J].RSC Advances,2015,5(19):14646~14652.
[7] H.Ohta,M.Kamiya,T.Kamiya,M.Hirano,H.Hosono.UV-detector Based on pn-heterojunction Diode Composed of Transparent Oxide Semiconductors,p-NiO/n-ZnO[J].Thin Solid Films,2003,445(2):317~321.
[8] N.Park,K.Sun,Z.Sun,et al.High Efficiency NiO/ZnO Heterojunction UV Photodiode by Sol-gel Processing[J].Journal of Materials Chemistry C,2013,1(44):7333~7338.
[9] M.Patel,H.-S.Kim,J.Kim.All Transparent Metal Oxide Ultraviolet Photodetector[J].Advanced Electronic Materials,2015,1(11):1500232.
[10] P.-N.Ni,C.-X.Shan,S.-P.Wang,et al.Self-powered Spectrum-selective Photodetectors Fabricated from n-ZnO/pNiO Core-shell Nanowire Arrays[J].Journal of Materials Chemistry C,2013,1(29):4445~4449.
[11] W.Dai,X.Pan,S.Chen,et al.Honeycomb-like NiO/ZnO HeterostructuredNanorods:PhotochemicalSynthesis,Characterization,and Enhanced UV Detection Performance[J].Journal of Materials Chemistry C,2014,2(23):4606~4614.
[12] B.Yin,Y.Qiu,H.Zhang,et al.Enhancing Performance of ZnO/NiO UV Photodetector by Piezo-phototronic Effect[J].RSC Advances,2016,6(54):48319~48323.
[13]刘爱元,张溪文,韩高荣.溶胶凝胶旋涂法制备NiO薄膜及其电致变色性能[J].材料科学与工程学报,2010,28(6):896~899.
[14] M.G.Kim,M.G.Kanatzidis,A.Facchetti,et al.Lowtemperature Fabrication of High-performance Metal Oxide Thinfilm Electronics via Combustion Processing[J]. Nature Materials,2011,10(5):382~388.
[15] J.H.Kim,P.W.Liang,S.T.Williams,et al.Highperformance and Environmentally Stable Planar Heterojunction Perovskite Solar Cells Based on a Solution-processed Copperdoped Nickel Oxide Hole-transporting Layer[J].Advanced Materials,2015,27(4):695~701.
[16] M.G.Kim,J.W.Hennek,H.S.Kim,et al.Delayed Ignition of Autocatalytic Combustion Precursors:Low-temperature Nanomaterial Binder Approach to Electronically Functional Oxide Films[J].Journal of the American Chemical Society,2012,134(28):11583~11593.
[17]冯丽莎,江庆军,叶志镇,等.非晶ZnTiSnO薄膜的溶液燃烧法制与TFT器件性能[J].材料科学与工程学报,2017,35(2):177~180.
[18] F.Jiang,W.C.Choy,X.Li,et al.Post-treatment-Free Solution-Processed Non-stoichiometric NiO(x)Nanoparticles for Efficient Hole-transport Layers of Organic Optoelectronic Devices[J].Advanced Materials,2015,27(18):2930~2937.
[19] Y.Shen,X.Yan,Z.Bai,et al.A Self-powered Ultraviolet Photodetector BasedonSolution-processedp-NiO/n-ZnO Nanorod Array Heterojunction[J].RSC Advances,2015,5(8):5976~5981.
[20] H.Long,L.Ai,S.Li,et al.Photosensitive and Temperaturedependent I-V Characteristics of p-NiO Film/n-ZnO Nanorod Array Heterojunction Diode[J]. Materials Science and Engineering:B,2014,184:44~48.
[21] S.Mohammadi,M.Zavvari.High Performance n-ZnO/p-metaloxides UV Detector Grown in Low-temperature Aqueous Solution Bath[J].Thin Solid Films,2017,626:173~177.
[22] R.-C.Wang, M.-G.Chen.Enhanced Photosensing and Tunable Luminescence from ZnO/NiO and ZnO/Ni Core-shell Nanorods[J].Sensors and Actuators B:Chemical,2013,178: