单层二硫化钼的制备及其晶界的原位光学表征
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摘要
近年来,新兴的二维过渡金属硫族化合物(TMDs)材料一直是研究的热点。其中,二硫化钼(MoS2)的优异性能引起了人们的广泛关注。TMDs材料制备方法多样,然而所制备的材料都不可避免地存在着晶界缺陷。晶界的存在会对材料的性能产生很大影响,人们通过各种方法来研究它。传统的研究方法存在很多局限性如操作复杂、耗时、引入人为缺陷等。这里报道了一种通过光学显微镜直接观察MoS2晶界的方法:通过化学气相沉积法(CVD)成功制备了大面积单层MoS2,将铜沉积在MoS2的表面在光学显微镜下可以直接观察到MoS2的晶界,实现了对其晶界的原位光学显微观测。同时,借助扫描电子显微镜(SEM)等进一步证实了该方法的简便可靠性。
In recent years,there is a hot topic of the emerging two-dimensional transition metal chalcogenides(TMDs).Two dimensional molybdenum disulfide(MoS2)has attracted a lot of attentions.There are many ways to prepare this material but the grain boundaries are inevitable.The grain boundaries have a great influence on their properties and people have been studying this field through various means.In traditional,studying the grain boundaries has many disadvantages,such as complex operations,time consuming and artificial defects.Here we report a simple method for the visualization of large GBs in MoS2.Copper was deposited on the MoS2 grown by chemical vapor deposition(CVD),and then the GBs could be observed by optical microscope.At the same time,the simple reliability of the method was confirmed by scanning electron microscope.
In recent years,there is a hot topic of the emerging two-dimensional transition metal chalcogenides(TMDs).Two dimensional molybdenum disulfide(MoS2)has attracted a lot of attentions.There are many ways to prepare this material but the grain boundaries are inevitable.The grain boundaries have a great influence on their properties and people have been studying this field through various means.In traditional,studying the grain boundaries has many disadvantages,such as complex operations,time consuming and artificial defects.Here we report a simple method for the visualization of large GBs in MoS2.Copper was deposited on the MoS2 grown by chemical vapor deposition(CVD),and then the GBs could be observed by optical microscope.At the same time,the simple reliability of the method was confirmed by scanning electron microscope.
引文
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[15]WINDOM B C,SAWYER W G,HAHN D W.A Raman spectroscopic study of MoS2and MoO3:Applications to tribological systems[J].Tribology Letters,2011,42:301-310.
[16]DUONG D L,HAN G H,LEE S M,et al.Probing graphene grain boundaries with optical microscopy[J].Nature,2012,490:235-239.
[17]YU S U,CHO Y,PARK B,et al.Fast benchtop visualization of graphene grain boundaries using adhesive properties of defects[J].Chemical Communications,2013,49:5474-5476.
[18]HOLM E A,OLMSTED D L,FOILES S M,et al.Comparing grain boundary energies in face-centered cubic metals:Al,Au,Cu and Ni[J].Scripta Materialia,2010,63(9):905-908.
[19]ALEXANDER K C,SCHUH C A.Exploring grain boundary energy landscapes with the activation-relaxation technique[J].Scripta Materialia,2013,68(12):937-940.
[20]UESUGI T,HIGASHI K.First-principles calculation of grain boundary energy and grain boundary excess free volume in aluminum:Role of grain boundary elastic energy[J].Journal of Materials Science,2011,46:4199-4205.
[2]LIU J X,CAO H,JIANG B,et al.Newborn 2D material for flexible energy conversion and storage[J].Science China Materials,2016,59(6):459-474.
[3]MENG R S,JIANG J K,LIANG Q H,et al.Design of graphene-like gallium nitride nitride and WS2/WSe2nanocomposites for photocatalyst applications[J].Science China Materials,2016,59(12):1027-1036.
[4]LEHOCKEY E M,BRENNENSTUHL A M.On the relationship between grain boundary connectivity,coincident site lattice boundaries,and intergranular stress corrosion cracking[J].Corrosion Science,2004,46:2383-2404.
[5]KOEPKE J C,WOOD J D,ESTRADA D,et al.Atomic-scale evidence for potential barriers and strong carrier scattering at graphene grain boundaries:A scanning tunneling microscopy study[J].ACS Nano,2012,7:75-86.
[6]HUANG P Y,RUIZ-VARGAS C S,van der ZANDE A M,et al.Grains and grain boundaries in single-layer graphene atomic patchwork quilts[J].Nature,2011,469:389-392.
[7]SCHMIDT H,WANG S,CHU L,et al.Transport properties of monolayer MoS2 grown by chemical vapor deposition[J].Nano Letter,2014,14:1909-1913.
[8]ZHANG J,YU H,CHEN W,et al.Scalable growth of highquality polycrystalline MoS2 monolayers on SiO2 with tunable grain sizes[J].ACS Nano,2014,8:6024-6030.
[9]LEE H,ZHANG Q,ZHANG W,et al.Synthesis of large-area MoS2atomic layers with chemical vapor deposition[J].Advanced Materials,2012,24:2320-2325.
[10]LI H,ZHANG Q,YAP C C R,et al.From bulk to monolayer MoS2:Evolution of Raman scattering[J].Advanced Functional Materials,2012,22:1385-1390.
[11]WU Y E,WANG D S,LI Y D.Understanding of the major reactions in solution synthesis of functional nanomaterials[J].Science China Materials,2016,59(11):938-996.
[12]YANG X N,LI Q,HU G F,et al.Controlled synthesis of high-quality crystals of monlayer MoS2for nanoelectronic device application[J].Science China Materials,2016,59(3):182-190.
[13]JEON J,JANG K,JEON M,et al.Layer-controlled CVD growth of large-area two-dimensional MoS2films[J].Nanoscale,2015,7:1688-1695.
[14]YIN Y,LI H,ZHANG H,et al.Single-layer MoS2phototransistors[J].ACS Nano,2012,6:74-80.
[15]WINDOM B C,SAWYER W G,HAHN D W.A Raman spectroscopic study of MoS2and MoO3:Applications to tribological systems[J].Tribology Letters,2011,42:301-310.
[16]DUONG D L,HAN G H,LEE S M,et al.Probing graphene grain boundaries with optical microscopy[J].Nature,2012,490:235-239.
[17]YU S U,CHO Y,PARK B,et al.Fast benchtop visualization of graphene grain boundaries using adhesive properties of defects[J].Chemical Communications,2013,49:5474-5476.
[18]HOLM E A,OLMSTED D L,FOILES S M,et al.Comparing grain boundary energies in face-centered cubic metals:Al,Au,Cu and Ni[J].Scripta Materialia,2010,63(9):905-908.
[19]ALEXANDER K C,SCHUH C A.Exploring grain boundary energy landscapes with the activation-relaxation technique[J].Scripta Materialia,2013,68(12):937-940.
[20]UESUGI T,HIGASHI K.First-principles calculation of grain boundary energy and grain boundary excess free volume in aluminum:Role of grain boundary elastic energy[J].Journal of Materials Science,2011,46:4199-4205.