电场控制金属辅助化学腐蚀制备硅微纳米结构的研究
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摘要
采用电场控制贵金属颗粒在单晶硅(111)上成功制备出<111>的硅微纳米结构。构建电场驱动下的硅微纳米结构制备模型,研究电场强度对腐蚀速率和两相电场对腐蚀方向的作用规律。验证电场控制腐蚀方向的可行性,得出优化的电场电流密度,为控制腐蚀方向,制备可控的硅微纳米结构提供新的方法和实验手段。
Metal-assisted chemical etching(MACE) plays a very important role in manufacturing silicon micronanostructures,however,the reaction process is affected by many factors and it is difficult to achieve effective control ofthe process. The silicon micro-nanostructures with <111> direction are successfully fabricated on the monocrystallinesilicon(111)substrate by using electric field to control noble metal particles. The manufacturing model of silicon micronanostructure driven by electric field is constructed to study the effect of electric field intensity on the corrosion rate andthe effect of two-phase electric field on the corrosion direction. The feasibility of the electric field to control the corrosiondirection is verified and optimized current density of electric field is obtained,new method and experimental means areprovided for controlling the corrosion direction and fabricating controlled silicon micro-nanostructures.
Metal-assisted chemical etching(MACE) plays a very important role in manufacturing silicon micronanostructures,however,the reaction process is affected by many factors and it is difficult to achieve effective control ofthe process. The silicon micro-nanostructures with <111> direction are successfully fabricated on the monocrystallinesilicon(111)substrate by using electric field to control noble metal particles. The manufacturing model of silicon micronanostructure driven by electric field is constructed to study the effect of electric field intensity on the corrosion rate andthe effect of two-phase electric field on the corrosion direction. The feasibility of the electric field to control the corrosiondirection is verified and optimized current density of electric field is obtained,new method and experimental means areprovided for controlling the corrosion direction and fabricating controlled silicon micro-nanostructures.
引文
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[2]Brueck S R J.Optical and interferometric lithographynanotechnology enablers[J].Proceedings of the IEEE,2005,93(10):1704—1721.
[3]Patolsky F,Zheng G,Lieber C M.Fabrication of silicon nanowire devices for ultrasensitive,label-free,real-time detection of biological and chemical species[J].Nature Protocols,2006,1(4):1711—1724.
[4]裴立宅.硅纳米线纳米器件的研究进展[J].半导体光电,2007,(2):156—160.[4]Pei Lizhai.Advances in silicon nanowires nanodevices[J].Semiconductor Optoelectronics,2007,(2):156—160.
[5]王新,徐敏,李理.硅纳米线光电化学太阳能电池[J].激光与光电子学进展,2009,46(2):41.[5]Wang Xin,Xu Ming,Li Li.Photoelectrochemical solar cells of silicon nanowires[J].Laser&Optoelectronics Progress,2009,46(2):41.
[6]Huang Zhipeng,Geyer N,Werner P,et al.Metalassisted chemical etching of silicon:A review[J].Advanced Materials,2011,23(2):285—308.
[7]Hildreth O J,Lin W,Wong C P.Effect of catalyst shape and etchant composition on etching direction in metal-assisted chemical etching of silicon to fabricate3D nanostructures[J].ACS Nano,2009,3(12):4033—4042.
[8]Han Hee,Huang Zhipeng,Lee Woo.Metal-assisted chemical etching of silicon and nanotechnology applications[J].Nanotoday,2014,9(3):271—304.
[9]冯梓颖,蒋忱,曾滢瀛.MACE制备的硅纳米线拉曼光谱及陷光结构研究[J].太阳能学报,2015,36(9):2083—2088.[9]Feng Ziying,Jiang Chen,Ceng Yingying.Research on raman spectroscopy and light trapping structure of silicon nanowires manufactured by MACE[J].Acta Energiae Solaris Sinica,2015,36(9):2083—2088.
[10]Chen H,Wang H,Zhang X,et al.Wafer-scale synthesis of single-crystal zigzag silicon nanowire arrays with controlled turning angles[J].Nano Letters,2010,10(3):864—868.
[11]Sivakov V A,Broenstrup G,Pecz B,et al.Realization of vertical and zigzag single crystalline silicon nanowire architectures[J].Journal of Physical Chemistry C,2010,114(9):3798—3803.
[12]Cichoszewski J,Reuter M,Schwerdt F,et al.Role of catalyst concentration on metal assisted chemical etching of silicon[J].Electrochimica Acta,2013,109:333—339.
[13]Chartier C,Bastide S,Lévy-Clément C.Metal-assisted chemical etching of silicon in HF-H2O2[J].Electrochimica Acta,2008,53(17):5509—5516.
[14]Hochbaum A I,Gargas D,Hwang Y J,et al.Single crystalline mesoporous silicon nanowires[J].Nano Letters,2009,9(10):3550—3554.
[15]Peng Kuiqing,Lu Aijiang,Zhang Ruiqin,et al.Motility of metal nanoparticles in silicon and induced anisotropic silicon etching[J].Advanced Functional Materials,2008,18(19):3026—3035.