TFT-LCD发绿的研究及改善
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摘要
TFT-LCD(Thin film transistor-liquid crystal display)行业中,在对屏进行切割、搬运过程中,容易造成屏边缘破损。当破损位置刚好位于屏点银胶位置时,银胶会通过破损进入,与黑矩阵(Black matrix,BM)接触,使黑矩阵带电形成干扰电场,从而使液晶偏转异常而产生发绿不良。切割工艺中,增加辅胶涂覆可以使切割后的空白条更稳定,从而减少搬运过程中摩擦、碰撞导致的屏边缘破损,从而降低不良发生率,导入后不良发生率由5.6%下降到1.5%。屏单侧点银胶是一种具有可行性的不良改善临时措施,但不具有量产导入性。通过对比相似产品银胶点位设计及产线工艺条件调查,得出当银胶点距离屏边缘≥4mm时,可有效防止发绿不良的发生。在点银胶侧BM区域进行挖槽,使银胶与BM隔离开,可彻底避免静电由银胶导入黑矩阵。黑矩阵挖槽设计导入后,发绿不良降低为0%,不良彻底解决。
In the TFT-LCD industry,it is easy to cause Panel edge to be damaged during the cutting and transportation.When the damage position is just at the position of the silver point of the Panel,the silver glue enters through the breakage and contacts with the BM(Black matrix),causing the BM to be charged to form an interference electric field,thereby causing the liquid crystal to deflect abnormally and causing greenish problem.In Cut process,the increase of dummy Seal can make the dummy bar after cutting more stable,thereby reducing the edge breakage caused by friction and collision during transportation,thus reducing the incidence of greenish,after introduction the incidence of greenish is reduced from 5.6% to 1.5%.Panel single-side silver glue point is a feasible temporary improvement measure,but it does not suitable for mass production.By comparing the design of silver glue points of similar products and investigating the process conditions of the production line,we concluded that when the silver glue points are more than 4 mm away from the edge of the panel,it can effectively avoid the occurrence of greenish.Make a groove in BM area to separate the silver glue from BM,and the static electricity can be completely prevented from being introduced into the BM by the silver glue.After the introduction of the BM groove design,the greenish failure was reduced to 0%,and the failure was completely solved.
In the TFT-LCD industry,it is easy to cause Panel edge to be damaged during the cutting and transportation.When the damage position is just at the position of the silver point of the Panel,the silver glue enters through the breakage and contacts with the BM(Black matrix),causing the BM to be charged to form an interference electric field,thereby causing the liquid crystal to deflect abnormally and causing greenish problem.In Cut process,the increase of dummy Seal can make the dummy bar after cutting more stable,thereby reducing the edge breakage caused by friction and collision during transportation,thus reducing the incidence of greenish,after introduction the incidence of greenish is reduced from 5.6% to 1.5%.Panel single-side silver glue point is a feasible temporary improvement measure,but it does not suitable for mass production.By comparing the design of silver glue points of similar products and investigating the process conditions of the production line,we concluded that when the silver glue points are more than 4 mm away from the edge of the panel,it can effectively avoid the occurrence of greenish.Make a groove in BM area to separate the silver glue from BM,and the static electricity can be completely prevented from being introduced into the BM by the silver glue.After the introduction of the BM groove design,the greenish failure was reduced to 0%,and the failure was completely solved.
引文
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[13]李庆亮,蔡克新,王敏,等.TFT-LCD端子在线切割工艺及关键技术[J].电子工艺技术,2016,37(4):236-238.LI Q L,CAI K X,WANG M,et al.Inline cutting process and key technology for TFT-LCD Q-panel[J].Electronics Process Technology,2016,37(4):236-238.(in Chinese)
[2]兰林锋,张鹏,彭俊彪.氧化物薄膜晶体管研究进展[J].物理学报,2016,65(12):128504.LAN L F,ZHANG P,PENG J B.Research progress on oxide-based thin film transisitors[J].Acta Physica Sinica,2016,65(12):128504.(in Chinese)
[3]刘宏燕,颜悦,望咏林,等.透明导电氧化物薄膜材料研究进展[J].航空材料学报,2015,35(4):63-82.LIU H Y,YAN Y,WANG Y L,et al.Recent progress in study of transparent conducting oxide films[J].Journal of Aeronautical Materials,2015,35(4):63-82.(in Chinese)
[4]王磊,徐苗,兰林锋,等.金属氧化物TFT驱动AMOLED显示研究进展[J].中国科学:化学,2013,43(11):1383-1397.WANG L,XU M,LAN L F,et al.Research progress of active matrix organic light emitting diode(AMOLED)displays driven by metal oxide thin film transistors(TFT)[J].Scientia Sinica Chimica,2013,43(11):1383-1397.(in Chinese)
[5]刘翔,张盛东,薛建设,等.高性能金属铟镓锌氧化物TFT的研究[J].真空科学与技术学报,2014,34(2):130-133.LIU X,ZHANG S D,XUE J S,et al.Improvement of indium gallium zinc oxide thin film transistor with etchstop layer of bottom-gate[J].Chinese Journal of Vacuum Science and Technology,2014,34(2):130-133.(in Chinese)
[6]柳卸林,简明珏.通过兼并可以实现跨越创新吗---京东方的并购与创新[J].管理评论,2007,19(8):10-16,48.LIUX L,JIAN M Y.Can companies achieve leapfrogging innovation by acquisition?---The case of acquisition and innovation of BOE[J].Management Review,2007,19(8):10-16,48.(in Chinese)
[7]包英群.中国平板显示产业创新能力研究[D].成都:电子科技大学,2016.BAO Y Q.Study on the innovation ability of Chinese flat panel display industry[D].Chengdu:University of Electronic Science and Technology of China,2016.(in Chinese)
[8]牟秋红,琚伟,彭丹,等.LED封装用导电银胶的研制[J].世界橡胶工业,2014,41(3):39-41.MU Q H,JU W,PENG D,et al.Study on conductive silver adhesive for LED encapsulation[J].World Rubber Industry,2014,41(3):39-41.(in Chinese)
[9]熊娜娜,王美娜,张汉平,等.固化工艺对银导电胶导电性能的影响[J].中国胶粘剂,2014,23(8):27-30.XIONG N N,WANG M N,ZHANG H P,et al.Influences of curing process on conductivity of silver conductive adhesive[J].China Adhesives,2014,23(8):27-30.(in Chinese)
[10]唐建东.TFT_LCD驱动芯片输入输出引脚静电放电保护电路设计[J].深圳职业技术学院学报,2009,8(5):22-25.TANG J D.Design of input&output pad esd protection in TFT_LCD drive chip[J].Journal of Shenzhen Polytechnic,2009,8(5):22-25.(in Chinese)
[11]陈孝仙,吴添德,杨尚松,等.一种高可靠消除FFS模式TFT-LCD静电引起残像的方法[J].光电子技术,2013,33(4):270-273.CHEN XX,WU T D,YANG S S,et al.A high reliable method of eliminating image sticking caused by static on FFS mode TFT-LCD[J].Optoelectronic Technology,2013,33(4):270-273.(in Chinese)
[12]陈艳,张建华.液晶显示器生产中的切割工艺及设备分析[J].电子工艺技术,2002,23(5):208-210.CHEN Y,ZHANG J H.Analysis of cut technics and equipment in producing LCD[J].Electronics Process Technology,2002,23(5):208-210.(in Chinese)
[13]李庆亮,蔡克新,王敏,等.TFT-LCD端子在线切割工艺及关键技术[J].电子工艺技术,2016,37(4):236-238.LI Q L,CAI K X,WANG M,et al.Inline cutting process and key technology for TFT-LCD Q-panel[J].Electronics Process Technology,2016,37(4):236-238.(in Chinese)
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