硅微通道板微加工技术研究
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摘要
微通道板(MCP)是二维通道电子倍增器,广泛用于电子、离子、紫外辐射和X-射线的探测与成像。提出一种硅微通道板(Si-MCP)制备工艺,分别采用干法刻蚀和电化学腐蚀微加工技术制备了硅微通道阵列(SMA)。重点研究了硅感应耦合等离子体刻蚀和光电化学腐蚀的特性,结果表明:硅光电化学腐蚀技术易于制备高长径比微通道,微通道侧壁更光滑、可制备倾斜通道、更适合制备Si-MCP.制备出通道周期为6μm、长径比大于50的SMA结构。采用厚层氧化实现了Si-MCP基体绝缘,采用原子层沉积工艺制备了连续倍增极,制作出Si-MCP样品。测试结果表明,采用半导体微加工技术制备的Si-MCP电子增益特性具有可行性。
Microchannel plate( MCP) is a two-dimensional electronic multiplier widely used for detecting and imaging of electrons,ions,UV radiation,and X-ray. A method for fabricating Si-MCP was proposed and studied. Silicon microchannel arrays( SMA) are prepared by dry etching technology and electrochemical etching process, respectively. The characteristics of multiplex inductively coupled plasma( ICP) etching and photo-electrochemical etching are investigated and discussed. The results indicate that Si photo-electrochemical etching can be used to easily fabricate high aspect ratio microchannel arrays with smooth sidewall and sloped channel,and is more suitable for the preparation of Si-MCP. Si microchannel arrays with 6 μm spacing and more than 50 aspect ratio of microchannel were prepared. The insulation of Si-MCP substrate is solved using thick-layer oxidation. The continuous dynode is prepared by atomic layer deposition( ALD) process. Si-MCP samples were prepared. The measured results indicate that the electron gain of Si-MCP based on micromachining process is feasible.
Microchannel plate( MCP) is a two-dimensional electronic multiplier widely used for detecting and imaging of electrons,ions,UV radiation,and X-ray. A method for fabricating Si-MCP was proposed and studied. Silicon microchannel arrays( SMA) are prepared by dry etching technology and electrochemical etching process, respectively. The characteristics of multiplex inductively coupled plasma( ICP) etching and photo-electrochemical etching are investigated and discussed. The results indicate that Si photo-electrochemical etching can be used to easily fabricate high aspect ratio microchannel arrays with smooth sidewall and sloped channel,and is more suitable for the preparation of Si-MCP. Si microchannel arrays with 6 μm spacing and more than 50 aspect ratio of microchannel were prepared. The insulation of Si-MCP substrate is solved using thick-layer oxidation. The continuous dynode is prepared by atomic layer deposition( ALD) process. Si-MCP samples were prepared. The measured results indicate that the electron gain of Si-MCP based on micromachining process is feasible.
引文
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[13]Chen X M,Lin J L,Ding Y,et al.Obtaining a high area ratio free-standing silicon microchannel plate via a modified electrochemical procedure[J].Journal of Micromechanics and Microengineering,2008,18(3):037003.
[14]Lei Y H,Zhao Z G,Guo J C,et al.Disordered wall arrays by photo-assisted electrochemical etching in n-type silicon[J].Journal of Semiconductors,2016,37(10):88-92.
[15]Ottow S,Lehmann V,F9ll H.Development of three-dimensional microstructure processing using macroporous n-type silicon[J].Applied Physics A,1996,63(2):153-159.
[2]Herbert O F,Ronnie W H,Eric E D,et al.Comparative response of microchannel plate and channel electron multiplier detectors to penetrating radiation in space[J].IEEE Transactions on Nuclear Science,2015,62(5):2283-2293.
[3]Jerry R H,William G T,John J F.Characteristics and applications of advanced technology microchannel plates[J].Proceedings of SPIE,1990,1306:169-178.
[4]Jerry R H,G William T.Microchannel electron multiplier:US,5086248[P].1992-02-04.
[5]Duanmu Q D,Ye L,Jiang D L,et al.Silicon microchannel array based on MEMS process[J].Proceedings of SPIE,2002,4928:237-240.
[6]Charles P B,Robert W B,John S,et al.Silicon etching process for making microchannel plates:US,5997713[P].1999-12-07.
[7]Lehmann A,Britting A,Eyrich W,et al.Improved lifetime of microchannel-plate PMTs[J].Nuclear Instruments and Methods in Physics Research Section A,2014,766(1):138-44.
[8]Ertley C D,Siegmund O H W,Jelinsky S R,et al.Second generation large area microchannel plate flat panel phototubes[J].Proceedings of SPIE,2016,9915:99152G.
[9]田景全,朱宝仁,姜德龙,等.测量微通道板电子增益的紫外光电法[J].兵工学报,1987,8(2):67-71.TIAN Jing-quan,ZHU Bao-ren,JIANG De-long,et al.UV photo electronic method for the measurement of MCP's gain[J].Acta Armamentarii,1987,8(2):67-71.(in Chinese)
[10]Lehmann V.The physics of macropore formation in low-doped ntype silicon[J].Journal of the Electrochemical Society,1993,140(10):2839-2843.
[11]Chang Y Z,Yu Z,Wen J,et al.Study of electrical current reconstruction on macropore arrays etched electrochemically on lightly-doped n-Si[J].Applied Surface Science,2016,362(1):538-544.
[12]Linnor J,Baddel X,Leimann P.Macro pore and pillar array formation in silicon by electrochemical etching[J].Physica Scripta,2006(1):72-76.
[13]Chen X M,Lin J L,Ding Y,et al.Obtaining a high area ratio free-standing silicon microchannel plate via a modified electrochemical procedure[J].Journal of Micromechanics and Microengineering,2008,18(3):037003.
[14]Lei Y H,Zhao Z G,Guo J C,et al.Disordered wall arrays by photo-assisted electrochemical etching in n-type silicon[J].Journal of Semiconductors,2016,37(10):88-92.
[15]Ottow S,Lehmann V,F9ll H.Development of three-dimensional microstructure processing using macroporous n-type silicon[J].Applied Physics A,1996,63(2):153-159.