基于二极管电爆炸的单触发开关导通机理
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摘要
采用磁控溅射、紫外光刻、化学气相沉积等微机电加工技术,制备了基于Schottky结二极管和p-n结二极管的两种单触发开关,分析了无负载时它们的放电特性,两种开关在0.22μF/1500 V、0.22μF/1200 V下达至2000 A左右的峰值电流。研究了触发电容容值、触发电压、主电压、绝缘层厚度和双二极管并联结构对导通性能的影响,发现随着触发电容容值的增加,最小触发电压逐渐降低;减小绝缘层厚度、提高触发电压和主电压,均有利于峰值电流的升高;双二极管并联作为触发元件时,峰值电流比基于单个二极管的单触发开关更高,上升时间更短。根据单触发开关的放电特性曲线,将其作用过程划分为二极管电爆炸、绝缘介质层击穿和脉冲大电流上升三个阶段,阐明了各阶段的作用机制,建立了相应的电阻模型,结果表明单触发开关的电阻可以视为常数,并且阻值在毫欧级。
Using microelectromechanical system(MEMS) technologies including magnetron sputtering,ultraviolet lithography and chemical vapor deposition,two kinds of high-voltage switches based on Schottky diode and p-n diode were designed and fabricated. Electrical characterizations were performed to investigate their performances under no-load condition,which showed that the current peaks of the two switches reached up to about 2000 A at 0.22 μF/1500 V and 0.22 μF/1200 V,respectively. The influence of trigger capacitor,trigger voltage,main voltage,dielectric film thickness and bi-diode structure on the conduction performance of single shot switch was studied. It is revealed that the minimum trigger voltage decreased gradually with the in-crease of capacitance. Reducing the thickness of dielectric film,increasing the trigger voltage and main voltage are all beneficial to improve the current peak. Besides,bi-diode structure can also improve the current peak. Finally,according to the electrical curves of single shot switch,its action process can be divided into three stages,namely the electro-explosion of diode,the breakdown of dielectric film and the rise of pulse current. The conduction mechanism and resistance model of single shot switch were also established. The results indicate that the resistance of single shot switch is very low,almost negligible.
Using microelectromechanical system(MEMS) technologies including magnetron sputtering,ultraviolet lithography and chemical vapor deposition,two kinds of high-voltage switches based on Schottky diode and p-n diode were designed and fabricated. Electrical characterizations were performed to investigate their performances under no-load condition,which showed that the current peaks of the two switches reached up to about 2000 A at 0.22 μF/1500 V and 0.22 μF/1200 V,respectively. The influence of trigger capacitor,trigger voltage,main voltage,dielectric film thickness and bi-diode structure on the conduction performance of single shot switch was studied. It is revealed that the minimum trigger voltage decreased gradually with the in-crease of capacitance. Reducing the thickness of dielectric film,increasing the trigger voltage and main voltage are all beneficial to improve the current peak. Besides,bi-diode structure can also improve the current peak. Finally,according to the electrical curves of single shot switch,its action process can be divided into three stages,namely the electro-explosion of diode,the breakdown of dielectric film and the rise of pulse current. The conduction mechanism and resistance model of single shot switch were also established. The results indicate that the resistance of single shot switch is very low,almost negligible.
引文
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[19]韩旻,邹晓兵,张贵新.脉冲功率技术基础[M].北京:清华大学出版社,2010:37-45.HAN Min,ZOU Xiao-bing,ZHANG Gui-xin. Basic pulsed power technology[M]. Beijing:Tsinghua University Press,2010:37-45.
[20] Baginski T A,Thomas K A,Smith S L. A high-voltage sin-gle-shot switch implemented with a MOSFET current source and avalanche diode[J]. IEEE Transactions on Industrial Elec-tronics,1997,44(2):167-172.
[21]王波.相变材料及聚合物中的复合应力波研究[D].合肥:中国科学技术大学,2017.WANG Bo. Research on stress waves of phase transition mate-rial and polymer under combined stress[D]. Hefei:University of Science and Technology of China,2017.
[22]方叶林.脉冲放电等离子体电磁特性的初步研究[D].南京:南京理工大学,2008.FANG Ye-lin. Preliminary study on electromagnetic properties of pulsed discharge plasma[D]. Nanjing:Nanjing University of Science and Technology,2008.
[23]胡博.适用于爆炸箔起爆器的电爆炸等离子体开关技术研究[D].南京:南京理工大学,2016.HU Bo. Research on the electro-explosive plasma switch ap-plied for explosive foil initiator[D]. Nanjing:Nanjing Univer-sity of Science and Technology,2016.
[2]曾庆轩,李守殿,袁士伟,等.爆炸箔起爆器用高压开关研究进展[J].安全与环境学报,2011,11(1):202-205.ZENG Qing-xuan,LI Shou-dian,YUAN Shi-wei,et al. Re-search progress of high-voltage switches in exploding foil initi-ators[J]. Journal of Safety and Environment,2011,11(1):202-205.
[3] Lv J,Zeng Q,Li M. Metal foil gap switch and its electrical properties[J]. Review of Scientific Instruments,2013,84(4):150-154.
[4]杨智,朱朋,徐聪,等.微芯片爆炸箔起爆器及其平面高压开关研究进展[J].含能材料,2018,27(2):167-176.YANG Zhi,ZHU Peng,XU Cong,et al. Review on micro chip exploding foil initiator and its planar high-voltage switch[J]. Chinese Journal of Energetic Materials(Hanneng Cail-iao),2018,27(2):167-176.
[5]陈楷.集成爆炸箔起爆器与平面三电极高压开关技术研究[D].南京:南京理工大学,2018.CHEN Kai. Research on the technique of micro chip exploding foil initiator and planar three electrodes high voltage switch[D]. Nanjing:Nanjing University of Science and Technology,2018.
[6]覃新,朱朋,徐聪,等.基于MOS控制晶闸管的高压电容放电特性[J].含能材料,2019:27(5):417-425.QIN Xin,ZHU Peng,XU Cong,et al. Characterization of high-voltage capacitor discharge unit based on MOS con-trolled thyristor[J]. Chinese Journal of Energetic Materials(Hanneng Cailiao),2019:27(5):417-425.
[7]杜枢,孙奇志,刘伟.圆盘型发生器驱动固体套筒内爆的数值模拟[J].强激光与粒子束,2017,29(2):77-82.DU Shu,SUN Qi-zhi,LIU Wei. Numerical simulation of im-plosion of solid liner driven by disk explosive magnetic genera-tor[J]. High Power Laser and Particle Beams,2017,29(2):77-82.
[8] Zhu P,Chen K,Xu C,et al. Development of a monolithic mi-cro chip exploding foil initiator based on low temperature co-fired ceramic[J]. Sensors&Actuators A Physical,2018,276:278-283.
[9]郑建毅,何闻.脉冲功率技术的研究现状和发展趋势综述[J].机电工程,2008,25(4):1-4.ZHENG Jian-yi,HE Wen. Review of research actuality and de-velopment directions of pulsed power technology[J]. Mechani-cal and Electrical Engineering Magazine,2008,25(4):1-4.
[10] Tasker D G,Lee R J,Gustavson P K. An explosively actuated electrical switch using Kapton insulation[R]. Nasa Sti/recon Technical Report N,1993,93.
[11] Baginski T A, Thomas K A. A robust one-shot switch for high-power pulse applications[J]. IEEE Transactions on Power Electronics,2009,24(1):253-259.
[12] Zhou Z,Ding G,Yang Z,et al. A micro-machined pulsed power switch based on Kapton films[C]//International Confer-ence on Advanced Technology of Design and Manufacture.Beijing,China,2010:439-442.
[13]胡博,李杰,朱朋,等.基于Parylene C的单触发开关性能实验研究[J].强激光与粒子束,2015,27(6):233-237.HU Bo,LI Jie,ZHU Peng,et al. Experimental investigation of one-shot switch based on Parylene C[J]. High Power Laser and Particle Beams,2015,27(6):233-237.
[14] Xu C,Zhu P,Chen K,et al. A highly integrated conjoined sin-gle shot switch and exploding foil initiator chip based on MEMS technology[J]. IEEE Electron Device Letters,2017,38(11):1610-1613.
[15] Ebenh?ch S,Nau S,H?ring I. Validated model-based simula-tion tool for design optimization of exploding foil initiators[J].Journal of Defense Modeling&Simulation,2014,12(2):189-207.
[16] MIL-DTL-23659D,电起爆器设计通用规范[S]. 2003.
[17]韩克华,周俊,任西,等.高压脉冲功率源等效参数对桥箔电爆性能影响规律[J].含能材料,2014,22(6):1-6.HAN Ke-hua,ZHOU Jun,REN Xi,et al. Effect of high voltage pulse power source equivalent parameter on exploding perfor-mance of bridge[J]. Chinese Journal of Energetic Material(Hanneng Cailiao),2014,22(6):1-6.
[18] Hu B,Xu C,Zhu P,et al. Characteristics testing of one-shot switch[C]//2016 China Semiconductor Technology Interna-tional Conference(CSTIC). Shanghai,China,2016.
[19]韩旻,邹晓兵,张贵新.脉冲功率技术基础[M].北京:清华大学出版社,2010:37-45.HAN Min,ZOU Xiao-bing,ZHANG Gui-xin. Basic pulsed power technology[M]. Beijing:Tsinghua University Press,2010:37-45.
[20] Baginski T A,Thomas K A,Smith S L. A high-voltage sin-gle-shot switch implemented with a MOSFET current source and avalanche diode[J]. IEEE Transactions on Industrial Elec-tronics,1997,44(2):167-172.
[21]王波.相变材料及聚合物中的复合应力波研究[D].合肥:中国科学技术大学,2017.WANG Bo. Research on stress waves of phase transition mate-rial and polymer under combined stress[D]. Hefei:University of Science and Technology of China,2017.
[22]方叶林.脉冲放电等离子体电磁特性的初步研究[D].南京:南京理工大学,2008.FANG Ye-lin. Preliminary study on electromagnetic properties of pulsed discharge plasma[D]. Nanjing:Nanjing University of Science and Technology,2008.
[23]胡博.适用于爆炸箔起爆器的电爆炸等离子体开关技术研究[D].南京:南京理工大学,2016.HU Bo. Research on the electro-explosive plasma switch ap-plied for explosive foil initiator[D]. Nanjing:Nanjing Univer-sity of Science and Technology,2016.
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