后摩尔时代研究型微电子人才培养思考
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摘要
随着工艺的进步,微电子科学进入后摩尔时代,"More Moore"、"More than Moore"和"Beyond Moore"并存的发展趋势对微电子专业人才提出了更高的要求。本文对如何培养满足当下社会产业需求和未来专业发展需要的研究型人才,从培养方案顶层设计、交叉基础学科知识补足、专业应用能力深化、专业创新潜力增强、多元化复合型实践体系构建、专业视野拓展等几方面提出了几点思考,希望能对高校微电子专业建设和人才培养提供一点借鉴。
With the development of fabrication technology,microelectronics has entered the post-Moore era. The concurrent trends of "More Moore", "More than Moore" and "Beyond Moore" point out a higher standard for the talent cultivation of microelectronics. In this paper,how to cultivate research-oriented talent needed by both current industry and academy in future is discussed. Some thoughts about designing cultivation program,strengthening cross discipline basis knowledge,increasing specialized application ability,developing specialized innovation ability,constructing multi-way practice system and enlarging professional view are given. We hope it can provide some inspiration for the discipline construction and talent cultivation of microelectronics.
With the development of fabrication technology,microelectronics has entered the post-Moore era. The concurrent trends of "More Moore", "More than Moore" and "Beyond Moore" point out a higher standard for the talent cultivation of microelectronics. In this paper,how to cultivate research-oriented talent needed by both current industry and academy in future is discussed. Some thoughts about designing cultivation program,strengthening cross discipline basis knowledge,increasing specialized application ability,developing specialized innovation ability,constructing multi-way practice system and enlarging professional view are given. We hope it can provide some inspiration for the discipline construction and talent cultivation of microelectronics.
引文
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[3]Brady,G.J.Way,A.J.Safron,N.S.et al..Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and Ga As[J].Science Advances,2016,(9),e1601240.
[4]虞致国,赵琳娜.基于校企合作提高集成电路设计类课程教学质量的研[J].大学教育,2016,(5):106-107.
[5]居水荣.微电子技术专业高职与本科分段培养模式的研究和探索[J].教育教学论坛.,2016,(5):116-118.
[2]Liao,L.Lin,Y.C.Bao,M.et al..High-speed graphene transistors with a self-aligned nanowire gate[J].Nature.,2010,(467):305-308.
[3]Brady,G.J.Way,A.J.Safron,N.S.et al..Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and Ga As[J].Science Advances,2016,(9),e1601240.
[4]虞致国,赵琳娜.基于校企合作提高集成电路设计类课程教学质量的研[J].大学教育,2016,(5):106-107.
[5]居水荣.微电子技术专业高职与本科分段培养模式的研究和探索[J].教育教学论坛.,2016,(5):116-118.