辐照后4H-SiC带电粒子探测器的特性研究
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摘要
碳化硅材料因其禁带宽度大、晶体原子离位能高等物理特性,被视为制作耐高温、抗辐射器件极具代表性的宽带隙半导体材料。为观察辐照对4H-SiC肖特基二极管带电粒子探测器的电学特性及对α粒子响应的能量分辨率的影响。利用60Co源的γ射线对4H-SiC肖特基二极管探测器进行辐照实验。经过总剂量为1 000 kGy的γ射线辐照后,探测器的正向电流相较于辐照前减小了三个数量级;反向电流值在0～120 V偏压下没有明显变化,当反向偏压高于120 V时,反向电流值变化明显。同时,辐照前后对α粒子的能量分辨率没有明显变化。
[Background] Silicon carbide is considered as a representative wide band gap semiconductor material for high temperature and radiation resistance devices due to its physical properties of wide band gap and high threshold displacement energy. [Purpose] This study aims to investigate the effects of irradiation on the electrical properties of the 4 H-SiC Schottky diode detector and the energy resolution of the α-particle response. [Methods] The4 H-SiC Schottky diode detector was irradiated with60 Co source gamma-rays. The forward current and reverse bias voltage of the detector were observed. [Results & Conlusion] After γ-rays irradiation with total absorbed dose of1 000 kGy, the forward current of the detector decreases by three orders of magnitude compared with that before irradiation. The reverse current value does not change at 0～120 V bias voltage. When the reverse bias voltage is higher than 120 V, the reverse current value changes obviously. At the same time, there is no significant change in the energy resolution of α-particle before and after irradiation.
[Background] Silicon carbide is considered as a representative wide band gap semiconductor material for high temperature and radiation resistance devices due to its physical properties of wide band gap and high threshold displacement energy. [Purpose] This study aims to investigate the effects of irradiation on the electrical properties of the 4 H-SiC Schottky diode detector and the energy resolution of the α-particle response. [Methods] The4 H-SiC Schottky diode detector was irradiated with60 Co source gamma-rays. The forward current and reverse bias voltage of the detector were observed. [Results & Conlusion] After γ-rays irradiation with total absorbed dose of1 000 kGy, the forward current of the detector decreases by three orders of magnitude compared with that before irradiation. The reverse current value does not change at 0～120 V bias voltage. When the reverse bias voltage is higher than 120 V, the reverse current value changes obviously. At the same time, there is no significant change in the energy resolution of α-particle before and after irradiation.
引文
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20 Sheridan D C,Chung G,Clark S,et al.The effects of high-dose gamma irradiation on high-voltage 4H-SiCSchottky diodes and the SiC-SiO2interface[J].Nuclear Science IEEE Transactions on,2001,48(6):2229-2232.
2浮海娟,王林军,王宏伟,等.4H-SiC探测器对强激光等离子体下反应产物的测量[J].核技术,2019,42(2):020501.DOI:10.11889/j.0253-3219.2019.hjs.42.020501.FU Haijuan,WANG Linjun,WANG Hongwei,et al.The R&D of 4H-SiC detector for laser plasma products measurement[J].Nuclear Techniques,2019,42(2):020501.DOI:10.11889/j.0253-3219.2019.hjs.42.020501.
3 Rogalla M,Runge K,S?ldner-Rembold A.Particle detectors based on semi-insulating silicon carbide[J].Nuclear Physics B-Proceedings Supplements,1999,78(1-3):516-520.
4 Bruzzi M,Nava F,Russo S,et al.Characterisation of silicon carbide detectors response to electron and photon irradiation[J].Diamond and Related Materials,2001,10(3-7):657-661.
5 Bertuccio G,Casiraghi R,Nava F.Epitaxial silicon carbide for X-ray detection[J].IEEE Transactions on Nuclear Science,2001,48(2):232-233.
6 Seshadri S,Dulloo A R,Ruddy F H,et al.Demonstration of an SiC neutron detector for high-radiation environments[J].IEEE Transactions on Electron Devices,1999,46(3):567-571.
7 Lebedev A A,Kalinina E V,Kozlovski V V.Radiation resistance of devices based on SiC[J].Journal of Surface Investigation:X-ray,Synchrotron and Neutron Techniques,2018,12(2):364-369.
8 Ye X,Xia X C,Liang H W,et al.Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection[J].Chinese Physics B,2018,27(8):087304.DOI:10.1088/1674-1056/27/8/087304.
9 Messenger S R,Burke E A,Xapsos M A,et al.NIEL for heavy ions:an analytical approach[J].Nuclear Science IEEE Transactions on,2003,50(6):1919-1923.
10 Jun I,Xapsos M,Messenger S R,et al.Proton nonionizing energy loss(NIEL)for device applications[J].IEEE Transactions on Nuclear Science,2003,50(6):1924-1928.
11 Ionascut-Nedelcescu A,Carlone C,Houdayer A,et al.Radiation hardness of gallium nitride[J].IEEETransactions on Nuclear Science,2003,49(6):2733-2738.
12 Summers G P,Burke E A,Shapiro P,et al.Damage correlations in semiconductors exposed to gamma,electron and proton radiations[J].IEEE Transactions on Nuclear Science,1993,40(6):1372-1379.
13 Xapsos M A,Summers G P,Blatchley C C,et al.60Co gamma ray and electron displacement damage studies of semiconductors[J].IEEE Transactions on Nuclear Science,1994,41(6):19451949.
14 Nava F,Vittone E,Vanni P,et al.Radiation tolerance of epitaxial silicon carbide detectors for electrons,protons and gamma-rays[J].Nuclear Instruments and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment,2003,505(3):645-655.
15 Nava F,Castaldini A,Cavallini A,et al.Radiation detection properties of 4H-SiC schottky diodes irradiated up to 1016n/cm2by 1 MeV neutrons[J].IEEETransactions on Nuclear Science,2006,53(5):2977-2982.
16 Luo Z Y,Chen T B,Ahyi A C,et al.Proton radiation effects in 4H-SiC diodes and MOS capacitors[J].IEEETransactions on Nuclear Science,2004,51(6):3748-3752.DOI:10.1109/TNS.2004.839254.
17 Harris R D,Frasca A J,Patton M O.Displacement damage effects on the forward bias characteristics of SiCSchottky barrier power diodes[J].IEEE Transactions on Nuclear Science,2005,52(6):2408-2412.DOI:10.1109/TNS.2005.860730.
18 Onoda S,Ohshima T,Hirao T,et al.Decrease of charge collection due to displacement damage by gamma rays in a 6H-SiC diode[J].IEEE Transactions on Nuclear Science,2007,54(6):1953-1960.DOI:10.1109/TNS.2007.910203.
19 Ganiyev S,Azim Khairi M,Ahmad Fauzi D,et al.The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode[J].Semiconductors,2017,51(12):1666-1670.DOI:10.1134/S1063782617120077.
20 Sheridan D C,Chung G,Clark S,et al.The effects of high-dose gamma irradiation on high-voltage 4H-SiCSchottky diodes and the SiC-SiO2interface[J].Nuclear Science IEEE Transactions on,2001,48(6):2229-2232.