GaAs开关FET功率特性的研究
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摘要
在GaAs单片微波集成电路(MMIC)设计中,开关场效应晶体管(FET)是研制开关、数控衰减器、数控移相器等电路的基础。基于0.15μm栅长GaAs开关FET,研究了GaAs开关FET在低频下的功率压缩特性。通过对开关FET的小信号等效电路和大信号模型的分析,发现频率下降会降低开关FET的栅压,从而降低开关FET低频下的功率容量。通过增加栅极电阻来提高栅极电压,进而增加开关FET功率容量。最后通过实际的开关电路验证了增大栅极电阻可有效提高开关电路的功率容量,对今后的开关类器件设计工作起到一定的指导意义。
In the design of the GaAs monolithic microwave integrated circuit(MMIC), the switch field-effect transistor(FET) is the basis for some integrated circuits, such as switches, digital attenuators and digital phase shifters. Based on the GaAs switch FET with the gate length of 0.15 μm, the power compression characteristics of GaAs switch FET in the low frequency was studied. By analyzing the small signal equivalent circuit and the large signal model of the switch FET, it was found that the gate voltage of the FET switch was reduced when the frequency decreased, thus the power capacity of the switch FET in the low frequency was reduced. The gate resistance was increased to raise the gate voltage and further to improve the power capacity of the switch FET. Finally, the actual switching circuit proves that increasing the gate resistance can effectively improve the power capacity of the switching circuit. It has some guiding significances for the design of switching devices.
In the design of the GaAs monolithic microwave integrated circuit(MMIC), the switch field-effect transistor(FET) is the basis for some integrated circuits, such as switches, digital attenuators and digital phase shifters. Based on the GaAs switch FET with the gate length of 0.15 μm, the power compression characteristics of GaAs switch FET in the low frequency was studied. By analyzing the small signal equivalent circuit and the large signal model of the switch FET, it was found that the gate voltage of the FET switch was reduced when the frequency decreased, thus the power capacity of the switch FET in the low frequency was reduced. The gate resistance was increased to raise the gate voltage and further to improve the power capacity of the switch FET. Finally, the actual switching circuit proves that increasing the gate resistance can effectively improve the power capacity of the switching circuit. It has some guiding significances for the design of switching devices.
引文
[1] 黄云. GaAs微波单片集成电路(MMIC)的可靠性研究[J]. 微电子技术,2003,31(1): 49-52.HUANG Y. Research on reliability of GaAs microwave monolithic integrated circuit (MMIC)[J]. Microelectronic Technology, 2003, 31(1): 49-52(in Chinese).
[2] ROBERTSON I, LUCYSZYN S.单片射频微波集成电路技术与设计[M]. 文光俊,谢甫珍,李家胤,译. 北京: 电子工业出版社, 2007: 261-267.
[3] 白元亮, 田国平. GaAs PHEMT 通信开关电路设计[J]. 半导体技术, 2013, 38(9): 656-660.BAI Y L, TIAN G P. Design of GaAs PHEMT communication switch [J]. Semiconductor Technology, 2013, 38(9): 656-660(in Chinese).
[4] PARTHASARATHY S, TRIVEDI A, SIROHI S, et al. RF SOI swith FET design and modeling tradeoffs for GSM applecations [C]//Proceedings of the 23rd International Conference on VISI Design. Bangalore, India, 2010: 194-199.
[5] 郭文婷,王文礼,王肖莹,等. 一种 0.5 μm GaAs PHEMT工艺的单刀九掷射频开关芯片[J].固体电子学研究与进展,2011, 31(1): 76-80. GUO W T, WANG W L, WANG X Y, et al. An SP9T RF switch design with 0.5 μm GaAs PHEMT[J]. Research & Progress of SSE, 2011, 31(1): 76-80(in Chinese).
[6] LI X, CAO Y, HALL D C, et al. GaAs MOSFET using InAlP native oxide as gate dielectric[J]. IEEE Electron Device Letters,2004, 25(12) : 772-774.
[7] YE P D, WILK G D, KWO J, et al. GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition[J]. IEEE Electron Device Letters, 2003, 24(4) : 209-211.
[8] 刘帅,要志宏,赵瑞华,等. 0.2～30 GHz GaAs FET开关模型的提取与验证[J]. 半导体技术, 2012,37(5): 347-350.LIU S, YAO Z H, ZHAO R H, et al. Extraction and verification of 0.2-30 GHz GaAs FET switch model [J]. Semiconductor Technology, 2012,37 (5): 347-350(in Chinese).
[9] 刘亚男, 杜光伟,胡志富,等. GaAs HEMT开关器件的大信号模型[J]. 半导体技术, 2016,41(6): 446-450.LIU Y N, DU G W, HU Z F,et al. The large-signal model of GaAs HEMT switch device[J]. Semiconductor Technology, 2016,41 (6): 446-450(in Chinese).
[10] 杨靖治. GaAs MOSFET射频开关器件与电路的研究[D]. 西安:西安电子科技大学, 2014: 34-39.
[11] LUDWIG R, BOGDANOV G. 射频电路设计——理论与应用[M].王子宇,王心悦,等译.2版.北京:电子工业出版社, 2002:8-16.
[2] ROBERTSON I, LUCYSZYN S.单片射频微波集成电路技术与设计[M]. 文光俊,谢甫珍,李家胤,译. 北京: 电子工业出版社, 2007: 261-267.
[3] 白元亮, 田国平. GaAs PHEMT 通信开关电路设计[J]. 半导体技术, 2013, 38(9): 656-660.BAI Y L, TIAN G P. Design of GaAs PHEMT communication switch [J]. Semiconductor Technology, 2013, 38(9): 656-660(in Chinese).
[4] PARTHASARATHY S, TRIVEDI A, SIROHI S, et al. RF SOI swith FET design and modeling tradeoffs for GSM applecations [C]//Proceedings of the 23rd International Conference on VISI Design. Bangalore, India, 2010: 194-199.
[5] 郭文婷,王文礼,王肖莹,等. 一种 0.5 μm GaAs PHEMT工艺的单刀九掷射频开关芯片[J].固体电子学研究与进展,2011, 31(1): 76-80. GUO W T, WANG W L, WANG X Y, et al. An SP9T RF switch design with 0.5 μm GaAs PHEMT[J]. Research & Progress of SSE, 2011, 31(1): 76-80(in Chinese).
[6] LI X, CAO Y, HALL D C, et al. GaAs MOSFET using InAlP native oxide as gate dielectric[J]. IEEE Electron Device Letters,2004, 25(12) : 772-774.
[7] YE P D, WILK G D, KWO J, et al. GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition[J]. IEEE Electron Device Letters, 2003, 24(4) : 209-211.
[8] 刘帅,要志宏,赵瑞华,等. 0.2～30 GHz GaAs FET开关模型的提取与验证[J]. 半导体技术, 2012,37(5): 347-350.LIU S, YAO Z H, ZHAO R H, et al. Extraction and verification of 0.2-30 GHz GaAs FET switch model [J]. Semiconductor Technology, 2012,37 (5): 347-350(in Chinese).
[9] 刘亚男, 杜光伟,胡志富,等. GaAs HEMT开关器件的大信号模型[J]. 半导体技术, 2016,41(6): 446-450.LIU Y N, DU G W, HU Z F,et al. The large-signal model of GaAs HEMT switch device[J]. Semiconductor Technology, 2016,41 (6): 446-450(in Chinese).
[10] 杨靖治. GaAs MOSFET射频开关器件与电路的研究[D]. 西安:西安电子科技大学, 2014: 34-39.
[11] LUDWIG R, BOGDANOV G. 射频电路设计——理论与应用[M].王子宇,王心悦,等译.2版.北京:电子工业出版社, 2002:8-16.