在线电解修整磨削与化学机械抛光相结合的蓝宝石基片组合加工技术
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摘要
通过分析ELID磨削和CMP抛光两种加工技术的原理和特点,充分结合两种技术的优点,对蓝宝石基片进行超光滑纳米级精度的组合加工。从理论上分析和计算了蓝宝石的临界切削深度,以及在不同粒度砂轮下的脆性和延性磨削方式;采用不同粒度的砂轮对蓝宝石基片进行超精密ELID磨削实验,快速地获得高质量的加工表面,同时采用磁流变斑点法对加工面的亚表面损伤进行测量;利用CMP抛光技术对磨削加工后的表面进行光整,以减少磨削时产生的加工缺陷,使工件的表面质量得到进一步改善与提高,最终获得亚纳米级的表面粗糙度。
The machining principles and characteristics of ELID grinding and CMP were analyzed,a newtechnology integrated with ELID grinding and CMP was applied to machine ultra smooth and nano-precisionsapphire substrates. At first,the critical depth of cut was calculated through the theory analyses,the ductileand brittle processing ways of sapphire substrates discussed by different particle sizes of the grinding wheels.The high-quality machined surfaces were obtained by a series of ELID grinding experiments with thesegrinding wheels,and the sub-surface damages of ground surfaces were measured by the magnetorheologicalfinishing(MRF)method;as the final finishing,CMP was used to decrease subsurface damages and to furtherimprove surface quality,and the sub-nanometer of surface roughness was achieved.
The machining principles and characteristics of ELID grinding and CMP were analyzed,a newtechnology integrated with ELID grinding and CMP was applied to machine ultra smooth and nano-precisionsapphire substrates. At first,the critical depth of cut was calculated through the theory analyses,the ductileand brittle processing ways of sapphire substrates discussed by different particle sizes of the grinding wheels.The high-quality machined surfaces were obtained by a series of ELID grinding experiments with thesegrinding wheels,and the sub-surface damages of ground surfaces were measured by the magnetorheologicalfinishing(MRF)method;as the final finishing,CMP was used to decrease subsurface damages and to furtherimprove surface quality,and the sub-nanometer of surface roughness was achieved.
引文
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[2]HU X,SONG Z,PAN Z,et al.Planarization Machining of Sapphire Wafers with Boron Carbide and Colloidal Silica Abrasives[J].Applied Surface Science,2009,255(19):8230-8234.
[3]周兆忠,袁巨龙,文东辉.蓝宝石衬底的超光滑表面加工进展Ⅲ[J].航空精密制造技术,2009,45(3):8-13.ZHOU Zhaozhong,YUAN Julong,WEN Donghui.Survey on the Progress of Ultra-smooth Sapphire Wafer Surface[J].Aviation Precision Manufacturing Technology,2009,45(3):8-13.
[4]王娟,刘玉岭,檀柏梅,等.蓝宝石衬底片的精密加工[J].微电子学,2006,36(1):46-48.WANG Juan,LIU Yuling,TAN Baimei,et al.Fine Polishing of Sapphire Substrates[J].Microelectronic,2006,36(1):46-48.
[5]GAGLIARDIA J J,KIM D,SOKOL J J,et al.A Case for 2-body Material Removal in Prime LED Sapphire Substrate Lapping and Polishing[J].Journal of Manufacturing Processes,2013,35:348-354.
[6]刘道标,徐晓明,周海,等.蓝宝石衬底双面研磨亚表面损伤分布研究[J].中国机械工程,2014,25(19):2568-2572.LIU Daobiao,XU Xiaoming,ZHOU Hai,et al.Study on Distribution of Subsurface Damage on Sapphire Substrate after Two-sided Lapping[J].China Mechanical Engineering,2014,25(19):2568-2572.
[7]KIM H,MANIVANNAN R,MOON D,et al.Evaluation of Double Sided Lapping Using a Fixed Abrasive Pad for Sapphire Substrates[J].Wear,2013,302:1340-1344.
[8]SEYAMA T,DOI T K,WATANABE S.A New Bell-jar Type Controlled Atmosphere Polishing Polishing Characteristics of Silicon and Sapphire[C]//The 1st PAC-RIM International Conference on Planarization CMP and Its Application Technology.Tokyo,2004,257:177-185.
[9]WEI X,XIE X Z,HU W,et al.Polishing Sapphire Substrates by 355nm Ultraviolet Laser[J].International Journal of Optics,2012,12:1-7.
[10]KASUGA H,OHMORI H,MISHIMA T,et al.Investigation on Mirror Surface Grinding Characteristics of Si C Materials[J].Journal of Ceramic Processing Research,2009,10(3):351-354.
[11]BIFANO T G,DOW T A,SCATTERGOOD R O.Ductile-regime Grinding:a New Technology for Machining Brittle Materials[J].Journal of Engineering for Industry,1991,113:184-189.
[12]TONSHOFF H K,PETERS J,INASAKI I,et al.Mod-elling and Simulation of Grinding Processes[J].Annals of the CIRP,1992,41(2):677-688.