SOI基栅控横向PIN蓝紫光探测器温度特性研究
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摘要
通过模型构建、数值计算和软件模拟,对绝缘衬底上的硅(SOI)基栅控横向P-I-N(通用结构)蓝紫光探测器在-25～75℃的电流-电压(I-V)特性进行研究。构建温度对栅极电压影响的解析模型,通过数值计算与软件模拟,验证模型的有效性。利用SILVACO软件中的ATLAS模块对不同温度下的沟道表面电子浓度、光电流、暗电流、信噪比(SNR)等特性进行模拟仿真。结果表明,沟道表面电子浓度和暗电流随温度的升高而增大,温度对光电流的影响不明显,信噪比随温度的升高而减小,在温度T=-25℃,栅极电压为1.44V时,SNR达到最大值6.11×10~5;在T=75℃,栅极电压为2V时,SNR达到最小值为1.064×10~3。
The current-voltage(I-V)characteristics of the SOI-based grating controlled lateral PIN blue/violet photodetector at -25～75 ℃ were studied by model establish,numerical calculation and software simulation.The analytical model of the effect of temperature on the gate voltage has been established and validity of the model is verified by the numerical calculation and software simulation.The electron concentration on the surface of channel,photo current,dark current and SNR is simulated by ATLAS module in SILVACO software.The results show that the electron concentration on the surface of channel and dark current increase with the rise of temperature,the effect of temperature on the photocurrent is not obvious,and the SNR decreases with the increase of temperature.The SNR reaches a maximum value of 6.11×10~5 when the temperature is -25℃ and the gate voltage is 1.44 V,while falls to a minimum value of 1.064×10~3 when the temperature is 75℃ and the gate voltage is 2V.
The current-voltage(I-V)characteristics of the SOI-based grating controlled lateral PIN blue/violet photodetector at -25～75 ℃ were studied by model establish,numerical calculation and software simulation.The analytical model of the effect of temperature on the gate voltage has been established and validity of the model is verified by the numerical calculation and software simulation.The electron concentration on the surface of channel,photo current,dark current and SNR is simulated by ATLAS module in SILVACO software.The results show that the electron concentration on the surface of channel and dark current increase with the rise of temperature,the effect of temperature on the photocurrent is not obvious,and the SNR decreases with the increase of temperature.The SNR reaches a maximum value of 6.11×10~5 when the temperature is -25℃ and the gate voltage is 1.44 V,while falls to a minimum value of 1.064×10~3 when the temperature is 75℃ and the gate voltage is 2V.
引文
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[2]HAN Z T,CHU J K,MENG F T,et al.Design and simulation of blue/violet sensitive photodetectors in silicon-on-insulator[J].Journal of Semiconductors,2009,30(10):104008-1-4.
[3]CHU J,HAN Z,MENG F,et al.Spectral response of blue-sensitive Si photodetectors in SOI[J].Sol St Electr,2011,55(1):54-58.
[4]ISMAIL R A,HAMOUDI W K.Characteristics of novel silicon PIN photodiode made by rapid thermal diffusion technique[J].J Electron Dev,2012,14:1104-1107.
[5]SOUZA M D,BULTEEL O,FLANDRE D,et al.Analysis of lateral SOI PIN diodes for the detection of blue and UV wavelengths in a wide temperature range[J].ECS Trans,2010,31(1):199-206.
[6]ZENS T,HU J J,BECLA P,et al.Monolithically integrated,resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon[J].Appl Phys Lett,2012,100(21):211106-1-3.
[7]XIE H Q,ZENG Y,ZENG J P,et al.Analysis and simulation of lateral PIN photodiode gated by transparent electrode fabricated on fully-depleted SOI film[J].JCent South Univ T,2011,18(3):744-748.
[8]XIE H Q,TANG L J,TANG J L,et al.High quantumefficiency in lateral PIN photodiode gated by transparent electrode fabricated on SOI film[J].Optoelectron Adv Mat,2014,8(1/2):77-82.
[9]XIE Haiqing,TANG Lijun,TANG Junlong,et al.Study on frequency characteristics in lateral pin photodiode gated by transparent electrode fabricated on fully-depleted silicon-on-insulator film[J].J Nanoelectron Optoelectron,2014,9(1):62-66.