用户名: 密码: 验证码:
Indium doping effect on properties of ZnO nanoparticles synthesized by sol–gel method
详细信息    查看全文 | 推荐本文 |
  • 英文篇名:Indium doping effect on properties of ZnO nanoparticles synthesized by sol–gel method
  • 作者:S ; Mourad ; J ; El ; Ghoul ; K ; Omri ; K ; Khirouni
  • 英文作者:S Mourad;J El Ghoul;K Omri;K Khirouni;Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE),Faculty of Sciences in Gabes, Gabes University;Imam Mohammad Ibn Saud Islamic University (IMSIU), College of Sciences, Department of Physics;
  • 英文关键词:In-doped ZnO nanoparticles;;sol–gel process;;structural and optical characterization
  • 中文刊名:ZGWL
  • 英文刊名:中国物理B
  • 机构:Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE),Faculty of Sciences in Gabes, Gabes University;Imam Mohammad Ibn Saud Islamic University (IMSIU), College of Sciences, Department of Physics;
  • 出版日期:2019-04-15
  • 出版单位:Chinese Physics B
  • 年:2019
  • 期:v.28
  • 基金:Project supported by the Deanship of Academic Research at Imam Mohamed Ibn Saud Islamic University(IMSIU),Riyadh,Kingdom of Saudi Arabia,(Research Project Nos.381212 and 1438H)
  • 语种:英文;
  • 页:ZGWL201904050
  • 页数:7
  • CN:04
  • ISSN:11-5639/O4
  • 分类号:346-352
摘要
Pure ZnO and indium-doped ZnO(In–ZO) nanoparticles with concentrations of In ranging from 0 to 5% are synthesized by a sol–gel processing technique. The structural and optical properties of ZnO and In–ZO nanoparticles are characterized by different techniques. The structural study confirms the presence of hexagonal wurtzite phase and indicates the incorporation of In~(3+) ions at the Zn~(2+) sites. However, the optical study shows a high absorption in the UV range and an important reflectance in the visible range. The optical band gap of In–ZnO sample varies between 3.16 e V and 3.22 e V. The photoluminescence(PL) analysis reveals that two emission peaks appear: one is located at 381 nm corresponding to the near-band-edge(NBE) and the other is observed in the green region. The aim of this work is to study the effect of indium doping on the structural, morphological, and optical properties of ZnO nanoparticles.
        Pure ZnO and indium-doped ZnO(In–ZO) nanoparticles with concentrations of In ranging from 0 to 5% are synthesized by a sol–gel processing technique. The structural and optical properties of ZnO and In–ZO nanoparticles are characterized by different techniques. The structural study confirms the presence of hexagonal wurtzite phase and indicates the incorporation of In~(3+) ions at the Zn~(2+) sites. However, the optical study shows a high absorption in the UV range and an important reflectance in the visible range. The optical band gap of In–ZnO sample varies between 3.16 e V and 3.22 e V. The photoluminescence(PL) analysis reveals that two emission peaks appear: one is located at 381 nm corresponding to the near-band-edge(NBE) and the other is observed in the green region. The aim of this work is to study the effect of indium doping on the structural, morphological, and optical properties of ZnO nanoparticles.
引文
[1]Goto K,Kawashima T and Tanabe N 2006 Sol.Energy Mater.Sol.Cells90 3251
    [2]Manoharan C,Pavithra G,DhanapandianS and Dhamodharan P 2015Spectrochim.Acta Part A 49 1
    [3]Mhlongo G H,Mothudi B M,Hillie K T,Swart H C and Dhlamini MS 2015 Mater.Lett.119 71
    [4]hen G,Zhao X,Zhang H,Liu F,Wang Y,Wang H,Gao J,Zhao Y,Li W and Tao J 2016 Superlattices and Microstructures 99 175
    [5]El Ghoul J 2015 J.Mater.Sci:Mater.Electron.27 1
    [6]Yan L,Ong C K and Rao X S 2004 J.Appl.Phys.96 508
    [7]E Ghoul J 2016 Bull.Mater.Sci.39 7
    [8]OzgurU and Morkoc?H 2006 Zinc Oxide Bulk Thin Films Nanostruct.(Elsevier)pp.1-600
    [9]Razali R,Khorsand Zak A,Majid W H A and Darroudi M 2011 Ceram.Int.37 3657
    [10]Sharma P,Sreenivas K and Rao K V 2003 J.Appl.Phys.93 3963
    [11]Movlarooy T and Magn J 2017 Materials 441 139
    [12]Dou Y,Wu F,Mao C,Fang L,Guo S and Zhou M 2015 J.Alloys Compd.633 408
    [13]Hsu C L,Hsu D X,Hsueh T J,Changand S P and Chang S J 2017Ceram.Int.43 5434
    [14]El Mir L,Ben Ayadi Z,Rahmouni H,El Ghoul J,Djessas K and von Bardeleben H J 2009 Thin Solid Films 517 6007
    [15]El Ghoul J,Kraini M and Lemine O M 2015 J.Mater.Sci:Mater.Electron.26 2614
    [16]Omri K,El Ghoul J,Lemine O M,Bououdina M,Zhang B and El Mir L 2013 Superlattices and Microstructures 60 139
    [17]El Ghoul J,Kraini M and El Mir L 2015 J.Mater.Sci:Mater.Electron.26 2555
    [18]Hjiri M,El Mir L,Leonardi S G,Pistone A,Mavilia L and Neri G 2014Sens.Actuators B 196 413
    [19]Ghiloufi I,El Ghoul J,Modwi A and El Mir L 2016 Mater.Sci.Semicond.Process.42 102
    [20]Hjiri M,Dhahri R,Omri K,El Mir L,Leonardi S G,Donato N and Neri G 2014 Mater.Sci.Semicond.Process.27 319
    [21]Ameen S,Akhtar M S,Seo H K,Kim Y S and Shin H S 2012 Chem.Eng.J.187 351
    [22]Dhahri R,Hjiri M,El Mir L,Alamri H,Bonavita A,Iannazzo D,Leonardi S G and Neri G 2017 Adv.Mater.Dev.2 34
    [23]Menner R,Cemernjak M Paetel S and Wischmann W 2017 Thin Solids Films 633 239
    [24]Slama R,El Ghoul J,Omri K,Houas A,El Mir L and Launay F 2016J.Mater.Sci:Mater Electron.27 7939
    [25]Chava R K and Kang M 2017 J.Alloys Compd.692 67
    [26]Kim S,Kim C,Na J,Oh E,Jeong C and Lim S 2015 J.Sol-Gel Sci.Technol.74 790
    [27]Zhu B L,Zeng D W,Wu J,Song W L and Xie C S 2003 J.Mater.Sci.Mater.Electron.14 521
    [28]El Ghoul J,Barthou C and El Mir L 2012 Superlattices and Microstructures 51 942
    [29]El Ghoul J,Barthou C,Saadoun M and El Mir L 2010 Physica B 405597
    [30]Omri K,Najeh I,Dhahri R,El GhoulJ and El Mir L 2014 Microelectron.Eng.128 53
    [31]Prajapati C S and Sahay P P 2013 Mater.Sci.Semicond.Process.16200
    [32]Scherrer P 1918 G¨ottingerNachr 2 98
    [33]Wang Q L,Yang Y F,He H P,Chen D D,Ye Z Z and Jin Y Z 2010Nanoscale Res.Lett.5 882
    [34]Fan J C C and Goodenough J B 1997 J.Appl.Phys.48 3524
    [35]Chung Y M,Moon C S,Jung M J and Han J G 2005 Surf.Coat.Technol.200 936
    [36]Huang S Y,Cheng Q J,Xu S,Wei D Y,Zhou H P,Long J D,Levchenko I and Ostrikov K 2012 J.Appl.Phys.111 036101
    [37]Lupan O,Emelchenko G A,Ursaki V V,Chai G,Redkin A N,Gruzintsev A N,Tiginyanu I M,Chow L,Ono L K,Roldan Cuenya B,Heinrich H and Yakimov E E 2010 Mater.Res.Bull.45 1026
    [38]Mahmood K,Park S B and Sung H J 2013 J.Mater.Chem.C 1 3138
    [39]Bomben K D,Moulder J F,Sobol P E and Stickle W F 1995 Handbook of X-ray Photoelectron Spectroscopy,ed.Jill Chastain,published by Perkin-Elmer Corporation Physical Electronics Division,pp.1-261
    [40]El Ghoul J,Bouguila N,G′omez-Lopera S A and El Mir L 2013 Superlattices and Microstructures 64 451
    [41]Kim Y and Leem J Y 2015 Korean J.Phys.Soc.66 1516
    [42]Riveros G,Gomez H,Henr′?quez R,Shrebler R,Cordova R,Marotti RE and Dalchiele E A 2002 Soc.Chil.Quim.47 1
    [43]Henr′?quez R,Grez P,Mu?noz E,G′omez H,Bad′an J A,Marotti R E and Dalchiele E A 2010 Thin Solid Films 518 1774
    [44]Alamdari S,Tafreshiand M J and Ghamsari M S 2017 Mater.Lett.19794
    [45]Wu C,Shen L,Yu H,Huang Q and Zhang Y C 2011 Mater.Res.Bull.46 1107
    [46]Kaur G,Mitra A and Yadav K L 2015 Prog.Nat.Sci.:Mater.Int.25 12
    [47]Dakhel A A 2010 Microelectron.Reliab.50 211
    [48]Lin B,Fu Z and Jia Y 2001 Appl.Phys.Lett.79 943
    [49]Vempati S,Mitra J and Dawson P 2012 Nanoscale Res.Lett.7 1
    [50]Murali A,Sarswat P K and Sohn H Y 2019 Mater.Today Chem.11 60

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700