4H-SiC探测器对强激光等离子体下反应产物的测量
|
摘要
研制了一款采用PCB(Printed Circuit Board)板封装、直接信号波形采样引出、用于激光等离子体飞行时间测量的4H-SiC探测器,探测器灵敏面积5 mm×5 mm,灵敏层厚度80μm,全耗尽电压为350～600 V。利用标准α源和强激光反应产物对4H-SiC的性能进行了测试:标准α源(~(228)Th,~(226)Ra)的能量刻度表明,4H-SiC探测器具有良好的能量线性响应,能量分辨率达到1.19%@7 666.75 keV,具有2～3 ns的快时间响应和飞行时间离子甄别的功能,是用于强激光等离子体反应产物的离子诊断和能量测量的有力工具。
[Background] In laser plasma nuclear physics experiments, products can be measured by pulse shape recording, time-of-flight(TOF) particle discrimination and pulse count rate measurements. However, high-radiation background caused by the strong laser makes strict requirements for detectors. [Purpose] This study aims to develop a 4 H-SiC detector for laser plasma products TOF measurement in a high-radiation environment laser field and should detect many particle types with large energy dynamic range and fast time response conditions. [Methods] A new type of TOF 4 H-SiC detector was developed using printed circuit board(PCB) board packaging technology with a sensitive thickness of 80 μm and direct waveform digital reading. Experimental tests were conducted to evaluate its performance in particle types detection with large energy dynamic range and fast time response conditions. [Results]The energy resolution was 1.19%@7 666.75 keV at 350～600 V full depletion voltage with standard α source(228 Th,226 Ra). [Conclusion] The detector can work well in high intensity laser field with good characters of fast time response 2～3 ns and TOF particle discrimination.
[Background] In laser plasma nuclear physics experiments, products can be measured by pulse shape recording, time-of-flight(TOF) particle discrimination and pulse count rate measurements. However, high-radiation background caused by the strong laser makes strict requirements for detectors. [Purpose] This study aims to develop a 4 H-SiC detector for laser plasma products TOF measurement in a high-radiation environment laser field and should detect many particle types with large energy dynamic range and fast time response conditions. [Methods] A new type of TOF 4 H-SiC detector was developed using printed circuit board(PCB) board packaging technology with a sensitive thickness of 80 μm and direct waveform digital reading. Experimental tests were conducted to evaluate its performance in particle types detection with large energy dynamic range and fast time response conditions. [Results]The energy resolution was 1.19%@7 666.75 keV at 350～600 V full depletion voltage with standard α source(228 Th,226 Ra). [Conclusion] The detector can work well in high intensity laser field with good characters of fast time response 2～3 ns and TOF particle discrimination.
引文
1 Manfredotti C,Lo Giudice A,Fasolo F,et al.SiCdetectors for neutron monitoring[J].Nuclear Instruments and Methods in Physics Research A,2005,552(3):131-137.DOI:10.1016/j.nima.2005.06.018.
2 Lo Giudice A,Fasolo F,Durisiet E,et al.Performances of4H-SiC Schottky diodes as neutron detectors[J].Nuclear Instruments and Methods in Physics Research A,2007,583:177-180.DOI:10.1016/j.nima.2007.08.241.
3 Ruddy F H,Dulloo A R,Seidel J G,et al.Development of a silicon carbide radiation detector[J].IEEE Transactions on Nuclear Science,1998,45(3):536-541.DOI:10.1109/23.682444.
4 Ren B,Huang J,Wang L J,et al.Thermal stability of hydrogenated diamond films in nitrogen ambience studied by reflection electron energy spectroscopy and X-ray photoelectron spectroscopy[J].Applied Surface Science,2015,388:565-570.DOI:10.1016/j.apsusc.2015.10.067.
5 Shen Y B,Huang J,Gu Q M,et al.The investigation of Ga-doped ZnO as an interlayer for ohmic contact to Cd1-xZnxTe films[J].Applied Surface Science,2017,425:176-179.DOI:10.1016/j.apsusc.2017.07.028.
6施朱斌,王林军,闵嘉华,等.四元并行电容性Frisch栅肖特基CdZnTe探测器[J].红外与毫米波学报,2011,30(6):514-517.SHI Zhubin,WANG Linjun,MIN Jiahua,et al.CdZnTe detectors with parallel capasitive Frisch grid[J].Journal of Infrared and Millimeter Waves,2011,30(6):514-517.
7 Runkle R C,Bernstein A,Vanier P E.Securing special nuclear material:recent advances in neutron detection and their role in nonproliferation[J].Journal of Applied Physics,2010,108(11):10101-10121.DOI:10.1063/1.3503495.
8 Nava F,Bertuccio G,Cavallini A,et al.Silicon carbide and its use as a radiation detector material[J].Measurement Science&Technology,2008,19(10):1-25.DOI:10.1088/0957-0233/19/10/102001.
9胡青青,杨俊,刘国福,等.SiC中子探测器的研究进展[J].核电子学与探测技术,2011,31(12):72-77.HU Qingqing,YANG Jun,LIU Guofu,et al.Research progress of silicon caibide neutron detector[J].Nuclear Electronics&Detection Technology,2011,31(12):72-77.
10 Nava F,Castaldini A,Vanni P,et al.Radiation detection properties of 4H-SiC Schottky diodes irradiated up to 1016n/cm2by 1 MeV neutrons[J].IEEE Transactions on Nuclear Science,2006,53(5):2977-2981.DOI:10.1109/TNS.2006.882777.
11 Torrisi L,Foti G,Giuffrida L,et al.Single crystal silicon carbide detector of emitted ions and soft X rays from power laser generated plasmas[J].Journal of Applied Physics,2009,105:123304.DOI:10.1063/1.3153160.
12 Cannavòa A,Torrisia L,Calcagnob L,et al.SiC detector characterization for radiation emitted by laser-generated plasmas[J].Journal of Instrumentation,2016,11(05):C05008.DOI:10.1088/1748-0221/11/05/C05008.
13 Dulloo A R,Ruddy F H,Seidel J G,et al.The thermal neutron response of miniature silicon carbide semiconductor detectors[J].Nuclear Instruments and Methods in Physics Research A,2003,498:415-423.DOI:10.1016/S0168-9002(02)01987-3.
14 Ruddy F H,Flammang R W,Seidel J G,et al.Lowbackground detection of fission neutrons produced by pulsed neutron interrogation[J].Nuclear Instruments and Methods in Physics Research A,2009,598(2):518-525.DOI:10.1016/j.nima.2008.09.033.
15蒋勇,范晓强,荣茹,等.SiC半导体探测器性能测量[J].核电子学与探测技术,2011,32(12):1372-1375.JIANG Yong,FAN Xiaoqiang,RONG Ru,et al.Properties measurement of silicon carbide detector[J].Nuclear Electronics&Detection Technology,2011,32(12):1372-1375.
16 Wu J,Lei J R,Jiang Y,et al.Feasibility study of a SiCs and with neutron spectrometer[J].Nuclear Instruments and Methods in Physics Research A,2013,708:72-77.DOI:10.1016/j.nima.2013.01.018.
17 Bertuccio G,Puglisi D,Torrisi L,et al.Silicon carbide detector for laser-generated plasma radiation[J].Applied Surface Science,2013,272:128-131.DOI:10.1016/j.apsusc.2012.03.183.
18 Margarone D,Krasa J,Giuffrida L,et al.Full characterization of laser-accelerated ion beams using Faraday cup,silicon carbide,and single-crystal diamond detectors[J].Journal of Applied Physics,2011,109:103302.DOI:10.1063/1.3585871.
2 Lo Giudice A,Fasolo F,Durisiet E,et al.Performances of4H-SiC Schottky diodes as neutron detectors[J].Nuclear Instruments and Methods in Physics Research A,2007,583:177-180.DOI:10.1016/j.nima.2007.08.241.
3 Ruddy F H,Dulloo A R,Seidel J G,et al.Development of a silicon carbide radiation detector[J].IEEE Transactions on Nuclear Science,1998,45(3):536-541.DOI:10.1109/23.682444.
4 Ren B,Huang J,Wang L J,et al.Thermal stability of hydrogenated diamond films in nitrogen ambience studied by reflection electron energy spectroscopy and X-ray photoelectron spectroscopy[J].Applied Surface Science,2015,388:565-570.DOI:10.1016/j.apsusc.2015.10.067.
5 Shen Y B,Huang J,Gu Q M,et al.The investigation of Ga-doped ZnO as an interlayer for ohmic contact to Cd1-xZnxTe films[J].Applied Surface Science,2017,425:176-179.DOI:10.1016/j.apsusc.2017.07.028.
6施朱斌,王林军,闵嘉华,等.四元并行电容性Frisch栅肖特基CdZnTe探测器[J].红外与毫米波学报,2011,30(6):514-517.SHI Zhubin,WANG Linjun,MIN Jiahua,et al.CdZnTe detectors with parallel capasitive Frisch grid[J].Journal of Infrared and Millimeter Waves,2011,30(6):514-517.
7 Runkle R C,Bernstein A,Vanier P E.Securing special nuclear material:recent advances in neutron detection and their role in nonproliferation[J].Journal of Applied Physics,2010,108(11):10101-10121.DOI:10.1063/1.3503495.
8 Nava F,Bertuccio G,Cavallini A,et al.Silicon carbide and its use as a radiation detector material[J].Measurement Science&Technology,2008,19(10):1-25.DOI:10.1088/0957-0233/19/10/102001.
9胡青青,杨俊,刘国福,等.SiC中子探测器的研究进展[J].核电子学与探测技术,2011,31(12):72-77.HU Qingqing,YANG Jun,LIU Guofu,et al.Research progress of silicon caibide neutron detector[J].Nuclear Electronics&Detection Technology,2011,31(12):72-77.
10 Nava F,Castaldini A,Vanni P,et al.Radiation detection properties of 4H-SiC Schottky diodes irradiated up to 1016n/cm2by 1 MeV neutrons[J].IEEE Transactions on Nuclear Science,2006,53(5):2977-2981.DOI:10.1109/TNS.2006.882777.
11 Torrisi L,Foti G,Giuffrida L,et al.Single crystal silicon carbide detector of emitted ions and soft X rays from power laser generated plasmas[J].Journal of Applied Physics,2009,105:123304.DOI:10.1063/1.3153160.
12 Cannavòa A,Torrisia L,Calcagnob L,et al.SiC detector characterization for radiation emitted by laser-generated plasmas[J].Journal of Instrumentation,2016,11(05):C05008.DOI:10.1088/1748-0221/11/05/C05008.
13 Dulloo A R,Ruddy F H,Seidel J G,et al.The thermal neutron response of miniature silicon carbide semiconductor detectors[J].Nuclear Instruments and Methods in Physics Research A,2003,498:415-423.DOI:10.1016/S0168-9002(02)01987-3.
14 Ruddy F H,Flammang R W,Seidel J G,et al.Lowbackground detection of fission neutrons produced by pulsed neutron interrogation[J].Nuclear Instruments and Methods in Physics Research A,2009,598(2):518-525.DOI:10.1016/j.nima.2008.09.033.
15蒋勇,范晓强,荣茹,等.SiC半导体探测器性能测量[J].核电子学与探测技术,2011,32(12):1372-1375.JIANG Yong,FAN Xiaoqiang,RONG Ru,et al.Properties measurement of silicon carbide detector[J].Nuclear Electronics&Detection Technology,2011,32(12):1372-1375.
16 Wu J,Lei J R,Jiang Y,et al.Feasibility study of a SiCs and with neutron spectrometer[J].Nuclear Instruments and Methods in Physics Research A,2013,708:72-77.DOI:10.1016/j.nima.2013.01.018.
17 Bertuccio G,Puglisi D,Torrisi L,et al.Silicon carbide detector for laser-generated plasma radiation[J].Applied Surface Science,2013,272:128-131.DOI:10.1016/j.apsusc.2012.03.183.
18 Margarone D,Krasa J,Giuffrida L,et al.Full characterization of laser-accelerated ion beams using Faraday cup,silicon carbide,and single-crystal diamond detectors[J].Journal of Applied Physics,2011,109:103302.DOI:10.1063/1.3585871.