全碳化硅功率模块开关瞬态特性及损耗研究
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摘要
为了加快全碳化硅功率模块的实际工程应用,针对全碳化硅模块开通关断过程中电压电流变化率、栅极电压耦合、开通损耗和关断损耗开展了分析,并与传统IGBT功率模块进行了对比分析。在全碳化硅功率模块双脉冲试验的基础之上,研究了不同电压电流等级下开关瞬态特性和开关损耗,提取试验参数,获得了电压电流应力大小,为全碳化硅功率模块的工程应用提供有效参考。
In order to accelerate the practical application of the all silicon carbide power module, the switching process of the all silicon carbide power module was analyzed. Parameters including voltage and current change rates, grid voltage coupling and switching loss were investigated. Besides, the IGBT module and the all silicon carbide power module were compared. On the basis of the double-pulse test of the all silicon carbide power module, the switching transient characteristics and the switching loss under different voltage and current levels were studied. The voltage and current stress values were obtained by extracting the test parameters. The results provided effective reference for the practical application of the all silicon carbide power module.
In order to accelerate the practical application of the all silicon carbide power module, the switching process of the all silicon carbide power module was analyzed. Parameters including voltage and current change rates, grid voltage coupling and switching loss were investigated. Besides, the IGBT module and the all silicon carbide power module were compared. On the basis of the double-pulse test of the all silicon carbide power module, the switching transient characteristics and the switching loss under different voltage and current levels were studied. The voltage and current stress values were obtained by extracting the test parameters. The results provided effective reference for the practical application of the all silicon carbide power module.
引文
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[17] 张斌锋,许津铭,钱强,等.SiC MOSFET特性及其应用的关键技术分析[J].电源学报,2016,14(4):39.
[18] 巴腾飞,李艳,梁美.寄生参数对SiC MOSFET栅源极电压影响的研究[J].电工技术学报,2016,31(13):64.
[19] 曾正,邵伟华,陈昊,等.基于栅极驱动回路的SiC MOSFET开关行为调控[J].中国电机工程学报,2018,38(4):1165.
[20] 梁美,郑琼林,可翀,等.SiC MOSFET、Si CoolMOS和IGBT的特性对比及其在DAB变换器中的应用[J].电工技术学报,2015,30(12):41.
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[22] CreeInc.SiC MOSFET datesheet,document library 2015[Z/OL].http://www.wolfspeed.com/.
[2] 钱照明,张军明,盛况.电力电子器件及其应用的现状和发展[J].中国电机工程学报,2014,34(29):5149.
[3] 盛况,郭清,张军明,等.碳化硅电力电子器件在电力系统的应用展望[J].电机工程学报,2012,32(30):1.
[4] YAN Q,YUAN X,GENG Y,et al.Performance evaluation of split output converters with SiC MOSFETs and SiC Schottky diodes[J].IEEE Transactions on Power Electronics,2017,32(1):406.
[5] YI P,MURTHY P K S,WEI L.Performance evaluation of SiC MOSFETs with long power cable and induction motor[C]//2016 IEEE Energy Conversion Congress and Exposition(ECCE),2016.
[6] 祁锋,徐隆亚,王江波,等.一种为碳化硅MOSFET设计的高温驱动电路[J].电工技术学报,2015,30(23):24.
[7] HAZRA S,DE A,CHENG L,et al.High switching performance of 1700-V/50-A SiC power MOSFET over Si IGBT /BiMOSFET for advanced power conversion applications[J].IEEE Transactions on Power Electronics,2016,31(7):4742.
[8] HUANG X,LI Q,LIU Z,et al.Analytical loss model of high voltage GaN HEMT in cascode configuration[J].IEEE Transactions on Power Electronics,2014,29(5):2208.
[9] 王旭东,朱义诚,赵争鸣,等.驱动回路参数对碳化硅MOSFET开关瞬态过程的影响[J].电工技术学报,2017,32(13):23.
[10] CHEN Z,BOROYEVICH D,BURGOS R.Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics[C]//The 2010 International Power Electronics Conference,2010:164.
[11] 梁美,郑琼林,李艳,等.用于精确预测SiC MOSFET开关特性的分析模型[J].电工技术学报,2017,32(1):148.
[12] 梁美,李艳,郑琼林,等.高速SiC MOSFET开关特性的测试方法[J].电工技术学报,2017,32(14):87.
[13] CHEN K,ZHAO Z,YUAN L,et al.The impact of non-linear junction capacitance on switching transient and its for SiC MOSFET[J].IEEE Transactions on Electron Devices,2015,62(2):333.
[14] WANG J,CHENG H S,LI R T.Characterization and experimental assessment of the effects of parasitic elements on the MOSFET switching performance[J].IEEE Transactions on Power Electronics,2013,28(1):573.
[15] LEMMON A,MAZZOLA M,GAFFORD J,et al.Instability in half-bridge circuits switched with wide band-gap transistors[J].IEEE Transactions on Power Electronics,2014,29(5):2380.
[16] SADIK D P,KOSTOV K,COLMENARES J,et al.Analysis of parasitic elements of SiC power modules with special emphasis on reliability issues[J].IEEE Journal of Emerging and Selected Topics in Power Electronics,2016,4(3):988.
[17] 张斌锋,许津铭,钱强,等.SiC MOSFET特性及其应用的关键技术分析[J].电源学报,2016,14(4):39.
[18] 巴腾飞,李艳,梁美.寄生参数对SiC MOSFET栅源极电压影响的研究[J].电工技术学报,2016,31(13):64.
[19] 曾正,邵伟华,陈昊,等.基于栅极驱动回路的SiC MOSFET开关行为调控[J].中国电机工程学报,2018,38(4):1165.
[20] 梁美,郑琼林,可翀,等.SiC MOSFET、Si CoolMOS和IGBT的特性对比及其在DAB变换器中的应用[J].电工技术学报,2015,30(12):41.
[21] DONG Z,WU X,SHENG K,et al.Impact of common source inductance on switching loss of SiC MOSFET[C]//2015 IEEE 2nd International Future Energy Electronics Conference (IFEEC) ,2015.
[22] CreeInc.SiC MOSFET datesheet,document library 2015[Z/OL].http://www.wolfspeed.com/.
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