纳秒激光与硅电池片光电转换效率变化及机理初步分析
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摘要
描述了用6 ns波长为1 064 nm的激光在SF6中作用于硅表面产生的锥形微观结构过程,测试了经激光处理及未经激光处理之硅晶片制成的硅电池光电转换效率的变化。实验显示,激光处理后的晶片所制电池其光电转换效率提高,其增加量为未经激光处理的电池效率的10%~15%,对这种变化进行了初步机理分析,认为可能与硅逾量电子结合能和Fermi能级有关。激光处理硅晶片的应用,也会进一步改善硅电池制作工艺。
The conical microstructures formed on the surface of Si-wafer in SF6 and upon irradiation with train of 6 ns laser pulses with a wavelength of 1 064 nm was described.The Si cell optoelectric conversion efficiency of the sample which is laser treatment(sample 1) and without laser treatment(sample 2) compared with sample 1 were measured,the conversion efficiency of sample 2 increased up to 10%-15%.Primary analysis the mechanism of the changes,it possible relates to binding energy of surfeit electron and Fermi level.Find application of the Si-wafer laser treatment the Si cell technology can further improve.
The conical microstructures formed on the surface of Si-wafer in SF6 and upon irradiation with train of 6 ns laser pulses with a wavelength of 1 064 nm was described.The Si cell optoelectric conversion efficiency of the sample which is laser treatment(sample 1) and without laser treatment(sample 2) compared with sample 1 were measured,the conversion efficiency of sample 2 increased up to 10%-15%.Primary analysis the mechanism of the changes,it possible relates to binding energy of surfeit electron and Fermi level.Find application of the Si-wafer laser treatment the Si cell technology can further improve.
引文
[1]北京工业大学,镇江恒兴源节能科技公司,山西黄河防腐绝热工程有限公司.一种硅晶片激光改性系统:中国,20112001074.6[P].2012-05-30.
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[3]Wen Ya,Peng Yan,Zhang Dongsheng,et al.Effect of pulseenergy of femtosecond laser on the formation of spikes onthe silicon surface in the ambient gas of SF6[J].Chinese JLasers,39,2012,39(4):0406001.(in Chinese)
[4]Liu Kui,Feng Guoying,Deng Guoliang,et al.Difference inmicrostructures induced by femtosecond laser scanning onsilicon surface at different temperatures[J].Chinese J Lasers,2012,39(8):8:0803003.(in Chinese)
[5]Bonse J,Rosenfeld A,Kruger J.Inplications of transientchanges of optical and surface properties of soliote duringfemtosecond laser pulse irradiation to the formation of laserinduced periodic surface strmtures[J].Appl Surf Sci,2010,257(12):5420-5423.
[6]Goldman J R,Prybla F A.Ultrafast dynamics of laser excitedelectron distributions in silicon[J].Phys Rer Lett,1994,72(9):1364-1367.
[7]Kautek W,Rudolph P,Daminelli G,et al.Physico-chemicalaspects of femtosecond pulse laser induced surfacenanostructures[J].Appl Phys A,2005,81:65-70.
[8]Shen M Y,Crouch C H,Cary J E,et al.Femtosecond laser-induced formation of subrn:Crometer spikes on Silicon inwater[J].Appl Phys Letl,2004,85(23):5694-5696.
[9]Jing Tao,Zhao Qingliang,Dong Zhiwei,et al.Interactionmechanism of femtosecond laser and wide band-gap material[J].Infrared and Laser Engineering,2010,39(6):1044-1048.(in Chinese)
[10]Deng Changmeng,Geng Yongyou,Wu Yiqun.Researchdevelopment of laser lithography technolopy[J].Infrared andLaser Engineering,2012,41(5):1223-1231.(in Chinese)
[11]Borowiec A,Haugen H K.Subwavelingth ripple formationon the surfaces of conpound semiconductors irradiated withfemtosecond laser pulses[J].Appl Phys Letl,2003,82(25):4462-4464.
[12]Liu Jie,Liu BangWun,Xia Yang,et al.Study on the opticalCharacteristic of"black silicon"antireflection coatingprepared by plasma immersion ion implantation[J].ActaPhys,2012,61(14):148102.(in Chinese)
[13]Gou Qinguan.A Course in Brief Solid Physics[M].Beijing:People′s Education Press,1978.(in Chinese)
[2]Younkin R,Carey J E,Magur E.Infrared absorption byconical Silicon microstructures made in a Variety ofbackground gases using femtosecond-laser pulses[J].JournalApplied Physics,2003,93(5):2626.
[3]Wen Ya,Peng Yan,Zhang Dongsheng,et al.Effect of pulseenergy of femtosecond laser on the formation of spikes onthe silicon surface in the ambient gas of SF6[J].Chinese JLasers,39,2012,39(4):0406001.(in Chinese)
[4]Liu Kui,Feng Guoying,Deng Guoliang,et al.Difference inmicrostructures induced by femtosecond laser scanning onsilicon surface at different temperatures[J].Chinese J Lasers,2012,39(8):8:0803003.(in Chinese)
[5]Bonse J,Rosenfeld A,Kruger J.Inplications of transientchanges of optical and surface properties of soliote duringfemtosecond laser pulse irradiation to the formation of laserinduced periodic surface strmtures[J].Appl Surf Sci,2010,257(12):5420-5423.
[6]Goldman J R,Prybla F A.Ultrafast dynamics of laser excitedelectron distributions in silicon[J].Phys Rer Lett,1994,72(9):1364-1367.
[7]Kautek W,Rudolph P,Daminelli G,et al.Physico-chemicalaspects of femtosecond pulse laser induced surfacenanostructures[J].Appl Phys A,2005,81:65-70.
[8]Shen M Y,Crouch C H,Cary J E,et al.Femtosecond laser-induced formation of subrn:Crometer spikes on Silicon inwater[J].Appl Phys Letl,2004,85(23):5694-5696.
[9]Jing Tao,Zhao Qingliang,Dong Zhiwei,et al.Interactionmechanism of femtosecond laser and wide band-gap material[J].Infrared and Laser Engineering,2010,39(6):1044-1048.(in Chinese)
[10]Deng Changmeng,Geng Yongyou,Wu Yiqun.Researchdevelopment of laser lithography technolopy[J].Infrared andLaser Engineering,2012,41(5):1223-1231.(in Chinese)
[11]Borowiec A,Haugen H K.Subwavelingth ripple formationon the surfaces of conpound semiconductors irradiated withfemtosecond laser pulses[J].Appl Phys Letl,2003,82(25):4462-4464.
[12]Liu Jie,Liu BangWun,Xia Yang,et al.Study on the opticalCharacteristic of"black silicon"antireflection coatingprepared by plasma immersion ion implantation[J].ActaPhys,2012,61(14):148102.(in Chinese)
[13]Gou Qinguan.A Course in Brief Solid Physics[M].Beijing:People′s Education Press,1978.(in Chinese)
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