退火温度对铝钕薄膜性能的影响
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摘要
为了研究退火温度对铝钕薄膜性能的影响规律,采用直流磁控溅射法在玻璃上制备了不同溅射功率、Al-0.5at%Nd和Al-2.5 at%Nd的合金薄膜,对薄膜样品分别进行230℃及300℃真空退火1 h。利用SEM、AFM对退火前后的AlNd薄膜的表面形貌、粗糙镀以及颗粒大小进行表征。结果表明:当退火温度达到300℃时,不同条件制备的薄膜表面均出现小丘,且溅射功率大小、掺杂钕(Nd)的浓度均能影响小丘密度。对于铝中掺杂0.5at和2.5%比例的钕在温度达到300℃时也不能抑制小丘的生长。
In order to realize the effect of annealing temperature to the characteristics of Al-Nd alloy films, Al-0.5 at%Nd and Al-2.5 at%Nd alloy thin films were prepared by direct current(DC) magnetron sputtering system method with different power on glass substrates. Those samples were annealed at 230 ℃ and 300 ℃ in vacuum for 1 hour. The morphology, roughness and grain size of the films were analyzed by scan electronic microscopy(SEM) and atomic force microscopy(AFM).It was found that hillocks were formed on the surface of all samples,when the anneal temperature reached at 300 ℃.Farther more, the sputtering power and the dopant of neodymium concentration in Al-Nd alloy films can influence the density of hillocks. Neodymium doped with 0.5 at or 2.5% Nd in aluminium can't inhibit the growth of hillocks when the temperature reached 300 ℃.
In order to realize the effect of annealing temperature to the characteristics of Al-Nd alloy films, Al-0.5 at%Nd and Al-2.5 at%Nd alloy thin films were prepared by direct current(DC) magnetron sputtering system method with different power on glass substrates. Those samples were annealed at 230 ℃ and 300 ℃ in vacuum for 1 hour. The morphology, roughness and grain size of the films were analyzed by scan electronic microscopy(SEM) and atomic force microscopy(AFM).It was found that hillocks were formed on the surface of all samples,when the anneal temperature reached at 300 ℃.Farther more, the sputtering power and the dopant of neodymium concentration in Al-Nd alloy films can influence the density of hillocks. Neodymium doped with 0.5 at or 2.5% Nd in aluminium can't inhibit the growth of hillocks when the temperature reached 300 ℃.
引文
[1]林钢,张汉焱,孙楹煌,黄仁松,胡庆文.MoNb薄膜直流磁控溅射制备及性能研究[J].电子元件与材料,2015,34(07):42-45.
[2]张继成,吴卫东,许华,唐晓红.磁控溅射技术新进展及应用[J].材料导报,2004(04):56-59.
[2]张继成,吴卫东,许华,唐晓红.磁控溅射技术新进展及应用[J].材料导报,2004(04):56-59.