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镉胁迫下硅对烤烟生长及生理特性的影响
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  • 英文篇名:Effects of Silicon on Growth and Physiological Characteristics of Flue-cured Tobacco under Cadmium Stress
  • 作者:祖庆学 ; 刘晓云 ; 饶成 ; 祖万斌 ; 李碧宽 ; 陆引罡
  • 英文作者:ZU Qingxue;LIU Xiaoyun;RAO Cheng;ZU Wanbin;LI Bikuan;LU Yingang;Kaiyang Branch of Guizhou Tobacco Company;Guizhou University;
  • 关键词:烤烟 ; 镉胁迫 ; 施硅量 ; 叶绿素
  • 英文关键词:Flue-cured tobacco;;Cadmium stress;;Silicon application amount;;Chlorophyll
  • 中文刊名:HNNY
  • 英文刊名:Journal of Henan Agricultural Sciences
  • 机构:贵阳市烟草公司开阳分公司;贵州大学;
  • 出版日期:2019-01-15
  • 出版单位:河南农业科学
  • 年:2019
  • 期:v.48;No.528
  • 基金:贵州省烟草公司贵阳市公司科技项目(贵烟计[2015]1号)
  • 语种:中文;
  • 页:HNNY201901007
  • 页数:6
  • CN:01
  • ISSN:41-1092/S
  • 分类号:44-49
摘要
采用盆栽试验,以烤烟品种南江3号为材料,探讨在土壤镉胁迫(0、1、5 mg/kg)下不同施硅量(0、1、2、4 g/kg)对烤烟生长及生理特性的影响,进一步探讨硅缓解烤烟镉毒害的机制,为镉污染烟区烤烟种植提供理论依据。结果表明,在不施硅处理中,随着土壤镉含量的增加,烟株的株高、茎围生长及光合色素生成受到抑制,叶片数与最大叶面积逐渐减小,叶片MDA含量增加、SOD活性提高,烟株各部位镉含量也逐渐增加。在同一土壤镉含量处理下,与不施硅处理相比,施硅量为4 g/kg时会抑制烟株的生长;在无镉胁迫下,与不施硅处理相比,施用外源硅会降低烟株各部位镉含量,总体以施硅量为1 g/kg时效果最明显;在1 mg/kg镉胁迫下,与不施硅处理相比,施用外源硅会降低烟株MDA含量、SOD活性及各部位镉含量,总体以施硅量为2 g/kg时效果最明显;在5 mg/kg镉条件下,与不施硅处理相比,施用外源硅会促进烟株发育,降低MDA含量及各部位镉含量,总体以施硅量为1 g/kg时效果最明显。综上,无镉、低镉、高镉胁迫下,在土壤中分别施入1、2、1 g/kg硅在一定程度上能减轻镉对烤烟的毒害。
        Effects of different silicon application( 0,1,2,4 g/kg) on the growth and physiological characteristics of flue-cured tobacco( Nanjiang No. 3) under soil cadmium stress( 0,1,5 mg/kg) were investigated by pot experiment to further explore the mechanism of silicon to alleviate the cadmium toxicity of fluecured tobacco,and provide a theoretical basis for the cultivation of flue-cured tobacco in cadmium-contaminated tobacco areas. The results showed that with the increase of soil cadmium content,the plant height,stem growth and photosynthetic pigment production of tobacco plants were inhibited,the number of leaves and the maximum leaf area decreased gradually,the MDA content and SOD activity of leaves increased,and the cadmium content in various parts of the tobacco plant was also gradually increased. Under the same soil cadmium content treatment,when the application amount of silicon was 4 g/kg,the growth of tobacco plants was inhibited compared with the treatment without silicon. Under cadmium-free stress,the application of exogenous silicon reduced the cadmium content in all parts of the tobacco plant compared with the treatment without silicon,and the effect was the most obvious when the silicon application amount was 1 g/kg. Under 1 mg/kg cadmium stress,the application of exogenous silicon reduced the MDA content,SOD activity and cadmium content in different parts of tobacco plants compared with thetreatment without silicon application,and the effect was the most obvious when the silicon application amount was 2 g/kg. Under 5 mg/kg cadmium,compared with the treatment without silicon,the application of exogenous silicon promoted the development of tobacco plants,decreased the content of MDA and cadmium of various parts,and the effect was the most obvious when the silicon application rate was 1 g/kg. In summary,the application of 1,2,1 g/kg silicon in the soil under the stress of no cadmium,low cadmium and high cadmium respectively could alleviate the toxicity of cadmium to flue-cured tobacco.
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