表面张力温度系数对硅单晶生长过程计算机模拟
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摘要
采用有限元方法模拟了硅单晶Cz炉内的熔体流动及传输过程,研究了表面张力温度系数对熔体流动和氧浓度的影响。结果表明,自由表面的熔体流动随表面张力温度系数的增大而加强。常规Cz炉内结晶界面的氧浓度呈现先降低后升高的趋势,而带有气体导板的Cz炉内氧浓度一直减小。
The melt flow and transport process in the silicon single crystal Cz furnace were simulated using finite element method, and the effect of surface tension temperature coefficient on the melt flow properties and oxygen concentration was investigated. The results show that the melt flow of the free surface increases with the increase of surface tension temperature coefficient. And the oxygen concentration of melt-crystal interface increases first and then decreases in general Cz furnace, while the oxygen concentration always decreases in the Cz furnace with gas guide plate.
The melt flow and transport process in the silicon single crystal Cz furnace were simulated using finite element method, and the effect of surface tension temperature coefficient on the melt flow properties and oxygen concentration was investigated. The results show that the melt flow of the free surface increases with the increase of surface tension temperature coefficient. And the oxygen concentration of melt-crystal interface increases first and then decreases in general Cz furnace, while the oxygen concentration always decreases in the Cz furnace with gas guide plate.
引文
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[3]梅向阳,马文会,魏奎先.多晶硅定向生长的实验研究[J].铸造技术,2010,31(6):702-705.
[4]李宗峰,周旗钢,何自强,等.高温氩退火对直拉CZ硅单晶中空洞型微缺陷的影响[J].稀有金属,2012(1):120-123.
[5]曾庆凯,关小军,潘忠奔,等.准400 mm直拉硅单晶生长过程中氧浓度对微缺陷影响的数值模拟[J].人工晶体学报,2011(5):1150-1156.