A Robust on-Wafer Large Signal Transistor Characterization Method at mm-Wave Frequency
|
摘要
Accurate on-wafer large signal characterization of RF transistor is crucial for the optimum design of wireless communication circuits. We report a novel and systematic measurement method for the accurate acquisition of input and output power of on-wafer transistors up to 40 GHz. This method employs external couplers to extract the travelling waves, combined with a novel large signal calibration algorithm to calculate the power at on-wafer probe tip. The accuracy of this method was bench marked versus conventional approaches in a real measurement bench, and further been verified by characterizing the large signal response of a 0.25μm GaN HEMT device. It is concluded that the measurement uncertainty has been greatly decreased with this new method, especially at mm-wave frequencies.
Accurate on-wafer large signal characterization of RF transistor is crucial for the optimum design of wireless communication circuits. We report a novel and systematic measurement method for the accurate acquisition of input and output power of on-wafer transistors up to 40 GHz. This method employs external couplers to extract the travelling waves, combined with a novel large signal calibration algorithm to calculate the power at on-wafer probe tip. The accuracy of this method was bench marked versus conventional approaches in a real measurement bench, and further been verified by characterizing the large signal response of a 0.25μm GaN HEMT device. It is concluded that the measurement uncertainty has been greatly decreased with this new method, especially at mm-wave frequencies.
Accurate on-wafer large signal characterization of RF transistor is crucial for the optimum design of wireless communication circuits. We report a novel and systematic measurement method for the accurate acquisition of input and output power of on-wafer transistors up to 40 GHz. This method employs external couplers to extract the travelling waves, combined with a novel large signal calibration algorithm to calculate the power at on-wafer probe tip. The accuracy of this method was bench marked versus conventional approaches in a real measurement bench, and further been verified by characterizing the large signal response of a 0.25μm GaN HEMT device. It is concluded that the measurement uncertainty has been greatly decreased with this new method, especially at mm-wave frequencies.
引文
[1]T.S.Rappaport,et al.,“Wideband millimeter-wave propagation measurements and channel models for future wireless communication system design“,IEEE Transactions on Communications,Vol.63,No.9,pp.3029-3056,2015.
[2]I.F.Akyildiz,et al.,“Terahertz band:Next frontier for wireless communications“,Physical Communication,Vol.12,No.4,pp.16-32,2014.
[3]W.F.Lu,et al.,“Subcarrier requirement analysis for downlink OFDMA cellular system”,Chinese Journal of Electronics,Vol.26,No.05,pp.1086-1091,2017.
[4]R.S.Pengelly,et al.,“A review of GaN on SiC high electron-mobility power transistors and MMICs”,IEEETransactions on Microwave Theory&Techniques,Vol.60,No.6,pp.1764-1783,2012.
[5]X.M.Yu,et al.,“Large signal statistical model oriented parameter extraction method for GaN high electron mobility transistors”,Chinese Journal of Electronics,Vol.16,No.6,pp.1319-1324,2017.
[6]J.Gao,RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors,Raleigh:SciTech Publishing,Inc.,2010.
[7]C.F Yao,et al.,“Design of 85-105GHz wideband traveling wave PIN diode switches and attenuators with radial stubs”,Chinese Journal of Electronics,Vol.26,No.01,pp.218-222,2017.
[8]A.Raffo,et al.,“On-wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices”,ARFTG Conference Digest Spring,63rd.IEEE,Fort Worth,TX,USA,pp.21-28,2004.
[9]E.Lourandaki,On-wafer Microwave Measurements and Deembedding,Artech House,2016.
[10]M.Seelmann-Eggebert,et al.,“On the accurate measurement and calibration of S-parameters for millimeter wavelengths and beyond”,IEEE Transactions on Microwave Theory&Techniques,Vol.63,No.7,pp.2335-2342,2015.
[11]V.Vadal,et al.,“GaN HEMT nonlinear characterization for wideband high-power amplifier design,”2011 6th European Microwave Integrated Circuit Conference,Manchester,pp.9-12,2011.
[12]J.Verspecht,et al.,“Network analysis beyond S-parameters:Characterizing and modeling component behaviour under modulated large-signal operating conditions”,56th ARFTGConference Digest,Boulder,AZ,USA,pp.1-4,2000.
[13]A.Rumiantsev and N.Ridler,“VNA calibration”,Microwave Magazine IEEE,Vol.9,No.3,pp.86-99,2008.
[14]T.Bednorz,Measurement Uncertainties for Vector Network Analysis,Rohde&Schwarz,1996.
[15]D.F.Williams,et al.,“A prescription for sub-millimeter-wave transistor characterization”,IEEE Transactions on Terahertz Science&Technology,Vol.3,No.4,pp.433-439,2013.
[16]H.J.Eul and B.Schiek,“A generalized theory and new calibration procedures for network analyzer self-calibration,”IEEE Trans.Microw.Theory Tech.,Vol.39,No.4,pp.724-731,1991.
[17]M.Demmler,P.J.Tasker and M.Schlechtweg,“On-wafer large signal power,S-parameter and waveform measurement system”,Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits,Duisburg,Germany,pp.153-158,1994.
[18]A.Ferrero A and U.Pisani,“An improved calibration technique for on-wafer large-signal transistor characterization”,IEEE Transactions on Instrumentation and measurement,Vol.42,No.2,pp.360-364,1993.
[19]R.Sakamaki and M.Horibe,“Realization of accurate on-wafer measurement using precision probing technique at millimeterwave frequency”,IEEE Transactions on Instrumentation and Measurement,Vol.67,No.8,pp.1940-1945,2018.
[20]J.Su,et al.,“A Novel TRM calibration method for improvement of modelling accuracy at mm-wave frequency”,2018 IEEE/MTT-S International Microwave SymposiumIMS,Philadelphia,PA,pp.1300-1303,2018.
[21]J.Cai,et al.,“Dynamic behavioral modeling of RF power amplifier based on time-delay support vector regression”,IEEE Transactions on Microwave Theory and Techniques,Vol.67,No.2,pp.533-543,2019.
[2]I.F.Akyildiz,et al.,“Terahertz band:Next frontier for wireless communications“,Physical Communication,Vol.12,No.4,pp.16-32,2014.
[3]W.F.Lu,et al.,“Subcarrier requirement analysis for downlink OFDMA cellular system”,Chinese Journal of Electronics,Vol.26,No.05,pp.1086-1091,2017.
[4]R.S.Pengelly,et al.,“A review of GaN on SiC high electron-mobility power transistors and MMICs”,IEEETransactions on Microwave Theory&Techniques,Vol.60,No.6,pp.1764-1783,2012.
[5]X.M.Yu,et al.,“Large signal statistical model oriented parameter extraction method for GaN high electron mobility transistors”,Chinese Journal of Electronics,Vol.16,No.6,pp.1319-1324,2017.
[6]J.Gao,RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors,Raleigh:SciTech Publishing,Inc.,2010.
[7]C.F Yao,et al.,“Design of 85-105GHz wideband traveling wave PIN diode switches and attenuators with radial stubs”,Chinese Journal of Electronics,Vol.26,No.01,pp.218-222,2017.
[8]A.Raffo,et al.,“On-wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices”,ARFTG Conference Digest Spring,63rd.IEEE,Fort Worth,TX,USA,pp.21-28,2004.
[9]E.Lourandaki,On-wafer Microwave Measurements and Deembedding,Artech House,2016.
[10]M.Seelmann-Eggebert,et al.,“On the accurate measurement and calibration of S-parameters for millimeter wavelengths and beyond”,IEEE Transactions on Microwave Theory&Techniques,Vol.63,No.7,pp.2335-2342,2015.
[11]V.Vadal,et al.,“GaN HEMT nonlinear characterization for wideband high-power amplifier design,”2011 6th European Microwave Integrated Circuit Conference,Manchester,pp.9-12,2011.
[12]J.Verspecht,et al.,“Network analysis beyond S-parameters:Characterizing and modeling component behaviour under modulated large-signal operating conditions”,56th ARFTGConference Digest,Boulder,AZ,USA,pp.1-4,2000.
[13]A.Rumiantsev and N.Ridler,“VNA calibration”,Microwave Magazine IEEE,Vol.9,No.3,pp.86-99,2008.
[14]T.Bednorz,Measurement Uncertainties for Vector Network Analysis,Rohde&Schwarz,1996.
[15]D.F.Williams,et al.,“A prescription for sub-millimeter-wave transistor characterization”,IEEE Transactions on Terahertz Science&Technology,Vol.3,No.4,pp.433-439,2013.
[16]H.J.Eul and B.Schiek,“A generalized theory and new calibration procedures for network analyzer self-calibration,”IEEE Trans.Microw.Theory Tech.,Vol.39,No.4,pp.724-731,1991.
[17]M.Demmler,P.J.Tasker and M.Schlechtweg,“On-wafer large signal power,S-parameter and waveform measurement system”,Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits,Duisburg,Germany,pp.153-158,1994.
[18]A.Ferrero A and U.Pisani,“An improved calibration technique for on-wafer large-signal transistor characterization”,IEEE Transactions on Instrumentation and measurement,Vol.42,No.2,pp.360-364,1993.
[19]R.Sakamaki and M.Horibe,“Realization of accurate on-wafer measurement using precision probing technique at millimeterwave frequency”,IEEE Transactions on Instrumentation and Measurement,Vol.67,No.8,pp.1940-1945,2018.
[20]J.Su,et al.,“A Novel TRM calibration method for improvement of modelling accuracy at mm-wave frequency”,2018 IEEE/MTT-S International Microwave SymposiumIMS,Philadelphia,PA,pp.1300-1303,2018.
[21]J.Cai,et al.,“Dynamic behavioral modeling of RF power amplifier based on time-delay support vector regression”,IEEE Transactions on Microwave Theory and Techniques,Vol.67,No.2,pp.533-543,2019.