原位制备MoO_3薄膜提高铜锌锡硫硒太阳能电池背界面接触性能（英文）

详细信息    查看全文 | 推荐本文 |

英文篇名：Enhancing back interfacial contact by in-situ prepared MoO_3 thin layer for Cu_2ZnSnS_xSe_(4–x) solar cells 作者：闵雪 ; 郭林宝 ; 于晴 ; 段碧雯 ; 石将建 ; 吴会觉 ; 罗艳红 ; 李冬梅 ; 孟庆波 英文作者：Xue Min;Linbao Guo;Qing Yu;Biwen Duan;Jiangjian Shi;Huijue Wu;Yanhong Luo;Dongmei Li;Qingbo Meng;Key Laboratory for Renewable Energy (CAS),Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condense Matter Physics,Institute of Physics,Chinese Academy of Sciences (CAS);School of Physical Sciences,University of Chinese Academy of Sciences;Songshan Lake Materials Laboratory;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences; 英文关键词：Cu_2ZnSnS_xSe_(4–)xsolar cells;;MoO_3blocking layer;;insitu preparation;;back interfacial contact;;carrier transport 中文刊名：SCMA 英文刊名：中国科学:材料科学(英文版) 机构：Key Laboratory for Renewable Energy (CAS),Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condense Matter Physics,Institute of Physics,Chinese Academy of Sciences (CAS);School of Physical Sciences,University of Chinese Academy of Sciences;Songshan Lake Materials Laboratory;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences; 出版日期：2018-12-28 09:12 出版单位：Science China Materials 年：2019 期：v.62 基金：financially supported by the National Natural Science Foundation of China (91733301, 51761145042, 51627803, 21501183, 51402348, 11474333, 91433205 and 51421002);; the Knowledge Innovation Program and the Strategic Priority Research Program (Grant XDB 12010400) of the Chinese Academy of Sciences 语种：英文; 页：SCMA201906004 页数：6 CN：06 ISSN：10-1236/TB 分类号：45-50

摘要

在空气中对钼基底进行退火处理,在钼表面形成MoO_3薄层.该MoO_3薄膜能有效抑制过厚Mo(S,Se)_2的形成.研究发现, MoO_3厚度随着温度的升高而增大,其中350°C形成的MoO_3厚度最为合适,既能够有效降低Mo(S,Se)_2的厚度,又不影响吸收层和钼电极接触,器件最高效率达到10.58%.这种方法不会引入其他杂质元素,操作简单方便.
        In-situ prepared MoO_3 thin layer has been introduced to suppress the formation of too thick Mo(S,Se)_2layer in Cu_2ZnSnS_xSe_(4–x)(CZTSSe) solar cells. This MoO_3 layer effectively improves the back interfacial contact between CZTSSe absorber layer and Mo substrate without poisoning the carrier transport. Up to 10.58% power conversion efficiency has been achieved.

引文

1 Zhou H,Hsu WC,Duan HS,et al.CZTS nanocrystals:a promising approach for next generation thin film photovoltaics.Energy Environ Sci,2013,6:2822-2838
    2 Polizzotti A,Repins IL,Noufi R,et al.The state and future prospects of kesterite photovoltaics.Energy Environ Sci,2013,6:3171-3182
    3 Chen S,Walsh A,Gong XG,et al.Classification of lattice defects in the kesterite Cu2Zn SnS4and Cu2ZnSnSe4earth-abundant solar cell absorbers.Adv Mater,2013,25:1522-1539
    4 Kumar M,Dubey A,Adhikari N,et al.Strategic review of secondary phases,defects and defect-complexes in kesterite CZTS-Se solar cells.Energy Environ Sci,2015,8:3134-3159
    5 Li J,Wang D,Li X,et al.Cation substitution in earth-abundant kesterite photovoltaic materials.Adv Sci,2018,5:1700744
    6 Yan C,Huang J,Sun K,et al.Cu2ZnSnS4solar cells with over 10%power conversion efficiency enabled by heterojunction heat treatment.Nat Energy,2018,3:764-772
    7 Shin B,Bojarczuk NA,Guha S.On the kinetics of MoSe2interfacial layer formation in chalcogen-based thin film solar cells with a molybdenum back contact.Appl Phys Lett,2013,102:091907
    8 Yang KJ,Sim JH,Jeon B,et al.Effects of Na and MoS2on Cu2ZnSnS4thin-film solar cell.Prog Photovolt-Res Appl,2015,23:862-873
    9 Scragg JJ,W?tjen JT,Edoff M,et al.A detrimental reaction at the molybdenum back contact in Cu2ZnSn(S,Se)4thin-film solar cells.JAm Chem Soc,2012,134:19330-19333
    10 Li J,Zhang Y,Zhao W,et al.A temporary barrier effect of the alloy layer during selenization:tailoring the thickness of MoSe2for efficient Cu2ZnSnSe4solar cells.Adv Energy Mater,2015,5:1402178
    11 Shin B,Zhu Y,Bojarczuk NA,et al.Control of an interfacial MoSe2layer in Cu2ZnSnSe4thin film solar cells:8.9%power conversion efficiency with a TiN diffusion barrier.Appl Phys Lett,2012,101:053903
    12 Liu F,Sun K,Li W,et al.Enhancing the Cu2ZnSnS4solar cell efficiency by back contact modification:Inserting a thin TiB2intermediate layer at Cu2ZnSnS4/Mo interface.Appl Phys Lett,2014,104:051105
    13 Li W,Han X,Zhao Y,et al.Pre-annealing induced oxide barrier to suppress the over-selenization of Mo contact.J Mater Sci-Mater Electron,2016,27:11188-11191
    14 Chernova NA,Roppolo M,Dillon AC,et al.Layered vanadium and molybdenum oxides:batteries and electrochromics.J Mater Chem,2009,19:2526-2552
    15 Ding QP,Huang HB,Duan JH,et al.Molybdenum trioxide nanostructures prepared by thermal oxidization of molybdenum.JCryst Growth,2006,294:304-308
    16 Kr?ger M,Hamwi S,Meyer J,et al.P-type doping of organic wide band gap materials by transition metal oxides:a case-study on molybdenum trioxide.Org Electron,2009,10:932-938
    17 Tian Q,Wang G,Zhao W,et al.Versatile and low-toxic solution approach to binary,ternary,and quaternary metal sulfide thin films and its application in Cu2ZnSn(S,Se)4solar cells.Chem Mater,2014,26:3098-3103
    18 Min X,Shi J,Guo L,et al.Regulation of Zn/Sn ratio in kesterite absorbers to boost 10%efficiency of Cu2ZnSn(S,Se)4solar cells.Chin Phys B,2018,27:016402
    19 Haass SG,Diethelm M,Werner M,et al.11.2%Efficient solution processed kesterite solar cell with a low voltage deficit.Adv Energy Mater,2015,5:1500712
    20 Shin D,Saparov B,Mitzi DB.Defect engineering in multinary earth-abundant chalcogenide photovoltaic materials.Adv Energy Mater,2017,7:1602366