基于双电荷层结构的CMOS单光子雪崩二极管
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摘要
基于180nm标准CMOS工艺,设计了一种能够有效提高光子探测效率的双电荷层结构的单光子雪崩二极管.该器件结构采用P电荷层和逆行掺杂的深N阱形成PN结,选取不同的P电荷层掺杂浓度,对击穿电压进行优化,当P电荷层浓度为1×1018cm-3时,击穿电压为17.8V,电场强度为5.26×105 V/cm.进一步研究发现N电荷层的位置会影响漂移电流密度和扩散电流密度.当在深N阱与N隔离层交界处掺杂形成N电荷层,即N电荷层掺杂峰值距离器件表面为2.5μm时,器件性能最优.通过Silvaco TCAD仿真分析得到:在过偏压1V下,波长500nm处的探测效率峰值为62%,同时在300～700nm范围内的光子探测效率均大于30%.
A single-photon avalanche diode with double charge layers is designed with 180 nm standard CMOS technology,which is able to improve photon detection efficiency.PN junction is formed by deep N-well with retrograde doping P-charge layer.The different doping concentration of P-charge layers are selected to optimize the breakdown voltage.When the P-charge layer concentration is 1×1018 cm-3,the simulation results show that the breakdown voltage is 17.8 Vand the electric field intensity is 5.26×105 V/cm.Further study shows that the position of N-charge layer affects drift current density and diffusion current density.The device performance is optimal when the N-charge layer is doped at the contact of the deep N-well and the N isolation layer,in other words,when the peak of the N-charge layer is 2.5μm from the surface of the device.By using Silvaco TCAD simulation analysis,which can get a conclusion that at a wavelength of 500 nm,the detection efficiency peak is 62% under bias voltage of 1 V,while the photon detection efficiency in the range of 300 nm to 700 nm is greater than 30%.
A single-photon avalanche diode with double charge layers is designed with 180 nm standard CMOS technology,which is able to improve photon detection efficiency.PN junction is formed by deep N-well with retrograde doping P-charge layer.The different doping concentration of P-charge layers are selected to optimize the breakdown voltage.When the P-charge layer concentration is 1×1018 cm-3,the simulation results show that the breakdown voltage is 17.8 Vand the electric field intensity is 5.26×105 V/cm.Further study shows that the position of N-charge layer affects drift current density and diffusion current density.The device performance is optimal when the N-charge layer is doped at the contact of the deep N-well and the N isolation layer,in other words,when the peak of the N-charge layer is 2.5μm from the surface of the device.By using Silvaco TCAD simulation analysis,which can get a conclusion that at a wavelength of 500 nm,the detection efficiency peak is 62% under bias voltage of 1 V,while the photon detection efficiency in the range of 300 nm to 700 nm is greater than 30%.
引文
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[2]VIGNETTI M M,CALMON F,LESIEUR P,DUBOIS F,et al.A novel 3Dpixel concept for Geiger-mode detection in SOI technology[C].2016Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon(EUROSOI-ULIS),2016:166-169.
[3]BRONZI D.Automotive three-dimensional vision through a single-photon counting SPAD camera[J].IEEE Transactions on Intelligent Transportation Systems,2016,17(3):782-795.
[4]LEITNER T.Measurements,simulations of low dark count rate single photon avalanche diode device in a low voltage180-nm CMOS image sensor technology[J].IEEE Transactions on Electron Devices,2013,60(6):1982-1988.
[5]BOSE S,OUH H.Parametric study of p-n junctions and structures for CMOS-integrated single-photon avalanche diodes[J].IEEE Sensors Journal,2018,18(13):5291-5299.
[6]FINKELSTEIN H,HSU M J,ESENER S C.STI-bounded single-photon avalanche diode in a deep-submicrometer CMOS technology[J].IEEE Electron Device Letters,2006,27(11):887-889.
[7]GERSBACH M,NICLASS C,CHARBON E,et al.A single photon detector implemented in a 130nm CMOS imaging process[C].ESSDERC 2008-38th European Solid-State Device Research Conference,2008:270-273.
[8]RICHARDSON J A,GRANT L A,HENDERSON R K.Low dark count single-photon avalanche diode structure compatible with standard nanometer scale CMOS technology[J].IEEE Photonics Technology Letters,2009,21(14):1020-1022.
[9]RICHARDSON J A,GRANT L A,WEBSTER E A G,et al.A 2μm diameter,9Hz dark count,single photon avalanche diode in 130nm CMOS technology[C].2010 Proceedings of the European Solid State Device Research Conference,2010:257-260.
[10]WEBSTER E A G,RICHARDSON J A,GRANT L A,et al.A single-photon avalanche diode in 90-nm CMOSimaging technology with 44%photon detection efficiency at 690nm[J].IEEE Electron Device Letters,2012,33(5):694-696.
[11]HENDERSON R K,WEBSTER E A G,GRANT L A.A dual-junction single-photon avalanche diode in 130-nm CMOStechnology[J].IEEE Electron Device Letters,2013,34(3):429-431.
[12]VEERAPPAN C,CHARBON E.A substrate isolated CMOS SPAD enabling wide spectral response and low electrical crosstalk[J].IEEE Journal of Selected Topics in Quantum Electronics,2014,20(6):299-305.
[13]VEERAPPAN C,CHARBON E.A low dark count p-i-n diode based SPAD in CMOS technology[J].IEEETransactions on Electron Devices,2016,63(1):65-71.
[14]WEBSTER E A G,GRANT L A,HENDERSON R K.A high-performance single-photon avalanche diode in 130-nm CMOS imaging technology[J].IEEE Electron Device Letters,2012,33(11):1589-1591.
[15]LEE M J,XIMENES A R.High-performance back-illuminated three-dimensional stacked single-photon avalanche diode implemented in 45-nm CMOS technology[J].IEEE Journal of Selected Topics in Quantum Electronics,2018,24(6):1-9.
[16]FREY L,MARTY M.Enhancing near-infrared photodetection efficiency in SPAD with silicon surface nanostructuration[J].IEEE Journal of the Electron Devices Society,2018,6:392-395.
[17]赵菲菲.一种高速度高密度的单光子雪崩二极管探测器的研究与设计[D].南京:南京邮电大学,2013.
[18]WU Jia-jun,XIE Sheng,MAO Lu-hong,et al.Single photon avalanche diode with non-contact guard ring based on CMOS technology[J].Acta Photonica Sinica,2018,47(1):0125001吴佳骏,谢生,毛陆虹,等.基于标准CMOS工艺的非接触式保护环单光子雪崩二极管[J].光子学报,2018,47(1):0125001.
[19]WANG Wei,BAO Xiao-yuan,CHEN Li,et al.A CMOS single photon avalanche diode device with high photon detection efficiency[J].Acta Photonica Sinica,2016,45(8):0823001王巍,鲍孝圆,陈丽,等.高探测效率CMOS单光子雪崩二极管器件[J].光子学报,2016,45(8):0823001.
[20]WANG-Wei,CHEN Ting,LI Jun-feng,et al.The research of high photon detection efficiency CMOS single photon avalanche diode[J].Acta Photonica Sinica,2016,46(8):0823001.王巍,陈婷,李俊峰,等.高光电探测效率CMOS单光子雪崩二极管器件[J].光子学报,2017,46(8):0823001.
[21]魏佳童.基于硅和锗的新型APD结构设计与研究[D].哈尔滨:哈尔滨工程大学,2016.
[22]NICLASS C,SOGA M.A miniature actively recharged single-photon detector free of afterpulsing effects with 6ns dead time in a 0.18μm CMOS technology[C].Proceedings of Electron Devices Meeting,2010:14.3-14.3.4.
[23]GUERRIERI F,TISA S,TOSI A,et al.Two-dimensional SPAD imaging camera for photon counting[J].IEEEPhotonics Journal,2010,2(5):759-774.
[24]STOPPA D,MOSCONI D,PANCHERI L,et al.Single-photon avalanche diode CMOS sensor for time-resolved fluorescence measurements[J].IEEE Sensors Journal,2009,9(9):1084-1090.