二氧化钒薄膜制备工艺的研究进展
|
摘要
阐述了二氧化钒的基本特性及应用。对几种二氧化钒薄膜制备工艺做了叙述,强调了掺杂和退火处理对薄膜相变温度和特性的影响。
The basic characteristics and application of vanadium dioxide were described. Several preparation processes for vanadium dioxide thin film were briefly described. The effects of doping and annealing on the phase transition temperature and characteristics of the thin film were emphasized.
The basic characteristics and application of vanadium dioxide were described. Several preparation processes for vanadium dioxide thin film were briefly described. The effects of doping and annealing on the phase transition temperature and characteristics of the thin film were emphasized.
引文
[1]Morin F J.Oxides which show a metal-to-insulator transition at the neel temperature[J].Physical Review Letters,1959,3(1):34-36.
[2]Chae B G,Youn D H,Kim H T,et al.Fabrication and electrical properties of pure VO2phase films[J].Journal of the Korean Physical Society,2003,44(4):884-888.
[3]何山,韦柳娅,傅群,等.二氧化钒和三氧化二钒研究进展[J].无机化学学报,2003,19(2):113-118.
[4]康晓春,赵颖,王胤博,等.二氧化钒制备与应用的新进展[J].材料导报,2008,22(s3):196-199.
[5]Zhou J,Gao Y,Liu X,et al.Mg-doped VO2nanoparticles:hydrothermal synthesis,enhanced visible transmittance and decreased metal-insulator transition temperature[J].Physical Chemistry Chemical Physics,2013,15(1):7505-7516.
[6]Gao Y,Cao C,Dai L,et al.Phase and shape controlled VO2nanostructures by antimony doping[J].Energy&Environmental Science,2012,5(9):8708-8715.
[7]Koo H,Xu L,Ko K E,et al.Effect of oxide buffer layer on the thermochromic properties of VO2,thin films[J].Journal of Materials Engineering&Performance,2013,22(12):3967-3973.
[8]Yong W L,Kim B J,Choi S,et al.Laser-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film[C]//Quantum Electronics and Laser Science Conference.IEEE,2008:1-2.
[9]Markov P,Ryckman J D,Marvel R E,et al.Silicon-VO2,hybrid electro-optic modulator[C]//Lasers and Electro-Optics.IEEE,2013:1-2.
[10]路远,凌永顺,冯云松,等.二氧化钒薄膜对红外脉冲功率激光的智能防护分析[J].红外与激光工程,2012,41(11):2886-2890.
[11]马德跃,李晓霞,郭宇翔,等.非线性高能激光防护材料研究进展[J].激光与红外,2014(6):593-599.
[12]骆永全,王伟平,罗飞.连续激光辐照下二氧化钒薄膜热致相变实验研究[J].强激光与粒子束,2006,18(5):713-716.
[13]袁宁一,李金华,林成鲁.溶胶-凝胶VO2薄膜转换特性研究[J].物理学报,2002,51(4):852-856.
[14]郑子樵.材料科学基础.第2版[M].长沙:中南大学出版社,2013.
[15]Davila N,Cabrera R,Sepulveda N.Programming and projection of near IR images using VO2Films[J].IEEEPhotonics Technology Letters,2012,24(20):1830-1833.
[16]陈长琦,方应翠,朱武,等.二氧化钒相变分析及应用[J].真空,2001(6):9-13.
[17]许旻,邱家稳,何延春,等.二氧化钒薄膜的结构、制备与应用[J].真空与低温,2001,7(3):136-138.
[18]Rui X,Sim D,Xu C,et al.One-pot synthesis of carbon-coated VO2(B)nanobelts for high-rate lithium storage[J].RSC Advances,2012,2(3):1174-1180.
[19]杨玚,路远,杨华,等.二氧化钒薄膜的制备和应用研究新进展[J].激光与红外,2015(8):875-882.
[20]张晟熙,杨鑫,程江,等.二氧化钒薄膜制备方法和热致相变性质的研究进展[J].重庆文理学院学报,2015,34(5):1-8.
[21]丰世凤,宁桂玲,王舰,等.二氧化钒薄膜制备研究的最新进展[J].化工进展,2007,26(6):814-818.
[22]宋林伟,黄婉霞,张玉波,等.VO2薄膜的制备及其热致相变特性研究[J].功能材料,2013,44(8):1110-1112.
[23]刘东青,郑文伟,程海峰,等.二氧化钒薄膜制备及其热致变发射率特性研究[J].红外技术,2010,32(3):181-184.
[24]Wu J,Huang W,Shi Q,et al.Effect of annealing temperature on thermochromic properties of vanadium dioxide thin films deposited by organic sol-gel method[J].Applied Surface Science,2013,268(3):556-560.
[25]刘金城,鲁建业,田雪松,等.二氧化钒薄膜研究的最近进展[J].哈尔滨工业大学学报,2002,34(4):570-572.
[26]Pan M,Zhong H,Wang S,et al.Properties of VO2,thin film prepared with precursor VO(acac)2[J].Journal of Crystal Growth,2004,265(1/2):121-126.
[27]罗振飞.氧化钒薄膜的制备及其电学、光学特性研究[D].成都:电子科技大学,2012.
[28]Shigesato Y,Enomoto M,Odaka H.Thermochromic VO2films deposited by RF magnetron sputtering,using V2O3or V2O5targets[J].Japanese Journal of Applied Physics,2000,39(10):6016-6024.
[29]Zhang H,Wu Z,Yan D,et al.Tunable hysteresis in metal-insulator transition of nanostructured vanadium oxide thin films deposited by reactive direct current magnetron sputtering[J].Thin Solid Films,2014,552(3):218-224.
[30]刘向,崔敬忠,梁耀廷,等.掺钨二氧化钒薄膜的制备与分析[J].真空与低温,2004,10(2):85-88.
[31]周少波,王双保,陈四海,等.新型VO2相变薄膜的制备[J].微纳电子技术,2004,41(9):29-31.
[32]Sahana M B,Dharmaprakash M S,Shivashankar S A.Microstructure and properties of VO2thin films deposited by MOCVD from vanadyl acetylacetonate[J].Journal of Materials Chemistry,2002,12(2):333-338.
[33]Sahana M B,Dharmaprakash M S,Shivashankar S A.Microstructure and properties of VO2thin films deposited by MOCVD from vanadyl acetylacetonate[J].Journal of Materials Chemistry,2002,12(2):333-338.
[34]Vernardou D,Paterakis P,Drosos H,et al.A study of the electrochemical performance of vanadium oxide thin films grown by atmospheric pressure chemical vapour deposition[J].Solar Energy Materials&Solar Cells,2011,95(10):2842-2847.
[35]Chiu T W,Tonooka K,Kikuchi N.Influence of oxygen pressure on the structural,electrical and optical properties of VO2,thin films deposited on Zn O/glass substrates by pulsed laser deposition[J].Thin Solid Films,2010,518(24):7441-7444.
[36]赵萍,李立珺,张洋.二氧化钒薄膜的制备及性能表征[J].现代电子技术,2011,34(6):148-150.
[37]Axelevitch A,Gorenstein B,Golan G.Investigation of the electrical transport mechanism in VOx,thin films[J].Microelectronics Reliability,2011,51(12):2119-2123.
[38]葛欣,尚志航,秦岩,等.氢水平衡法制备二氧化钒薄膜及XPS能谱分析[J].光谱实验室,2002,19(6):819-821.
[2]Chae B G,Youn D H,Kim H T,et al.Fabrication and electrical properties of pure VO2phase films[J].Journal of the Korean Physical Society,2003,44(4):884-888.
[3]何山,韦柳娅,傅群,等.二氧化钒和三氧化二钒研究进展[J].无机化学学报,2003,19(2):113-118.
[4]康晓春,赵颖,王胤博,等.二氧化钒制备与应用的新进展[J].材料导报,2008,22(s3):196-199.
[5]Zhou J,Gao Y,Liu X,et al.Mg-doped VO2nanoparticles:hydrothermal synthesis,enhanced visible transmittance and decreased metal-insulator transition temperature[J].Physical Chemistry Chemical Physics,2013,15(1):7505-7516.
[6]Gao Y,Cao C,Dai L,et al.Phase and shape controlled VO2nanostructures by antimony doping[J].Energy&Environmental Science,2012,5(9):8708-8715.
[7]Koo H,Xu L,Ko K E,et al.Effect of oxide buffer layer on the thermochromic properties of VO2,thin films[J].Journal of Materials Engineering&Performance,2013,22(12):3967-3973.
[8]Yong W L,Kim B J,Choi S,et al.Laser-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film[C]//Quantum Electronics and Laser Science Conference.IEEE,2008:1-2.
[9]Markov P,Ryckman J D,Marvel R E,et al.Silicon-VO2,hybrid electro-optic modulator[C]//Lasers and Electro-Optics.IEEE,2013:1-2.
[10]路远,凌永顺,冯云松,等.二氧化钒薄膜对红外脉冲功率激光的智能防护分析[J].红外与激光工程,2012,41(11):2886-2890.
[11]马德跃,李晓霞,郭宇翔,等.非线性高能激光防护材料研究进展[J].激光与红外,2014(6):593-599.
[12]骆永全,王伟平,罗飞.连续激光辐照下二氧化钒薄膜热致相变实验研究[J].强激光与粒子束,2006,18(5):713-716.
[13]袁宁一,李金华,林成鲁.溶胶-凝胶VO2薄膜转换特性研究[J].物理学报,2002,51(4):852-856.
[14]郑子樵.材料科学基础.第2版[M].长沙:中南大学出版社,2013.
[15]Davila N,Cabrera R,Sepulveda N.Programming and projection of near IR images using VO2Films[J].IEEEPhotonics Technology Letters,2012,24(20):1830-1833.
[16]陈长琦,方应翠,朱武,等.二氧化钒相变分析及应用[J].真空,2001(6):9-13.
[17]许旻,邱家稳,何延春,等.二氧化钒薄膜的结构、制备与应用[J].真空与低温,2001,7(3):136-138.
[18]Rui X,Sim D,Xu C,et al.One-pot synthesis of carbon-coated VO2(B)nanobelts for high-rate lithium storage[J].RSC Advances,2012,2(3):1174-1180.
[19]杨玚,路远,杨华,等.二氧化钒薄膜的制备和应用研究新进展[J].激光与红外,2015(8):875-882.
[20]张晟熙,杨鑫,程江,等.二氧化钒薄膜制备方法和热致相变性质的研究进展[J].重庆文理学院学报,2015,34(5):1-8.
[21]丰世凤,宁桂玲,王舰,等.二氧化钒薄膜制备研究的最新进展[J].化工进展,2007,26(6):814-818.
[22]宋林伟,黄婉霞,张玉波,等.VO2薄膜的制备及其热致相变特性研究[J].功能材料,2013,44(8):1110-1112.
[23]刘东青,郑文伟,程海峰,等.二氧化钒薄膜制备及其热致变发射率特性研究[J].红外技术,2010,32(3):181-184.
[24]Wu J,Huang W,Shi Q,et al.Effect of annealing temperature on thermochromic properties of vanadium dioxide thin films deposited by organic sol-gel method[J].Applied Surface Science,2013,268(3):556-560.
[25]刘金城,鲁建业,田雪松,等.二氧化钒薄膜研究的最近进展[J].哈尔滨工业大学学报,2002,34(4):570-572.
[26]Pan M,Zhong H,Wang S,et al.Properties of VO2,thin film prepared with precursor VO(acac)2[J].Journal of Crystal Growth,2004,265(1/2):121-126.
[27]罗振飞.氧化钒薄膜的制备及其电学、光学特性研究[D].成都:电子科技大学,2012.
[28]Shigesato Y,Enomoto M,Odaka H.Thermochromic VO2films deposited by RF magnetron sputtering,using V2O3or V2O5targets[J].Japanese Journal of Applied Physics,2000,39(10):6016-6024.
[29]Zhang H,Wu Z,Yan D,et al.Tunable hysteresis in metal-insulator transition of nanostructured vanadium oxide thin films deposited by reactive direct current magnetron sputtering[J].Thin Solid Films,2014,552(3):218-224.
[30]刘向,崔敬忠,梁耀廷,等.掺钨二氧化钒薄膜的制备与分析[J].真空与低温,2004,10(2):85-88.
[31]周少波,王双保,陈四海,等.新型VO2相变薄膜的制备[J].微纳电子技术,2004,41(9):29-31.
[32]Sahana M B,Dharmaprakash M S,Shivashankar S A.Microstructure and properties of VO2thin films deposited by MOCVD from vanadyl acetylacetonate[J].Journal of Materials Chemistry,2002,12(2):333-338.
[33]Sahana M B,Dharmaprakash M S,Shivashankar S A.Microstructure and properties of VO2thin films deposited by MOCVD from vanadyl acetylacetonate[J].Journal of Materials Chemistry,2002,12(2):333-338.
[34]Vernardou D,Paterakis P,Drosos H,et al.A study of the electrochemical performance of vanadium oxide thin films grown by atmospheric pressure chemical vapour deposition[J].Solar Energy Materials&Solar Cells,2011,95(10):2842-2847.
[35]Chiu T W,Tonooka K,Kikuchi N.Influence of oxygen pressure on the structural,electrical and optical properties of VO2,thin films deposited on Zn O/glass substrates by pulsed laser deposition[J].Thin Solid Films,2010,518(24):7441-7444.
[36]赵萍,李立珺,张洋.二氧化钒薄膜的制备及性能表征[J].现代电子技术,2011,34(6):148-150.
[37]Axelevitch A,Gorenstein B,Golan G.Investigation of the electrical transport mechanism in VOx,thin films[J].Microelectronics Reliability,2011,51(12):2119-2123.
[38]葛欣,尚志航,秦岩,等.氢水平衡法制备二氧化钒薄膜及XPS能谱分析[J].光谱实验室,2002,19(6):819-821.