摘要
本文系统研究了NO在Ir(111)表面的吸附,解离,以及可能的N_2生成机理.结果表明,顶位吸附的NO,其解离能垒较高(3.17 eV),不会发生解离,而三重Hcp和Fcc空位吸附的NO发生解离,能垒分别为1.23和1.28 eV.N_2是唯一的生成物,不会有副产物N_2O的产生.其最可能的反应路径为N和NO经过N_2O中间体而生成N_2,而不是直接N提取和N-N聚合产生N_2的机理.
The mechanism of NO adsorption and dissociation on Ir( 111) surface and the possible mechanism of N_2 formation were studied. The results show that the NO adsorbed on Hcp and Fcc sites dissociate,while those adsorbed on top site do not dissociate due to the very high dissociation barrier. Three dissociation pathways for the N_2 formation were located,and the results show that N + NO → N_2O → N_2+ O isthe predominant N_2 formation pathway,while the N + N → N_2 pathway is also involved but less competitive.
引文
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