Zinc tin oxide thin films prepared by MOCVD with different Sn/Zn ratios
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摘要
Zinc tin oxide(ZTO) thin films, with zinc acetate and tributyltin chloride as raw materials, were deposited on glass substrates by the method of metal organic chemical vapor deposition(MOCVD). The crystallization, microstructure and optical properties were investigated by scanning electronic microscope(SEM),X-ray diffraction(XRD) and ultraviolet-visible(UV-Vis)spectrophotometer. The results show that with the increase in Sn/Zn ratio, the crystal changes from wurtzite to rutile phase. When the ratio reaches 11:18,the intensity of Zn_2SnO_4 peaks appears to be the strongest and the optical band gap is about 3.27 eV. Calculated by the envelope method, the thickness of the ZTO thin films is 713.24 nm.Measured by UV-Vis spectrophotometer, the transmittance of the ZTO thin films reaches up to 80% in the wavelength range of 400-1000 nm when the Sn/Zn ratio is 7:18.
Zinc tin oxide(ZTO) thin films, with zinc acetate and tributyltin chloride as raw materials, were deposited on glass substrates by the method of metal organic chemical vapor deposition(MOCVD). The crystallization, microstructure and optical properties were investigated by scanning electronic microscope(SEM),X-ray diffraction(XRD) and ultraviolet-visible(UV-Vis)spectrophotometer. The results show that with the increase in Sn/Zn ratio, the crystal changes from wurtzite to rutile phase. When the ratio reaches 11:18,the intensity of Zn_2SnO_4 peaks appears to be the strongest and the optical band gap is about 3.27 eV. Calculated by the envelope method, the thickness of the ZTO thin films is 713.24 nm.Measured by UV-Vis spectrophotometer, the transmittance of the ZTO thin films reaches up to 80% in the wavelength range of 400-1000 nm when the Sn/Zn ratio is 7:18.
Zinc tin oxide(ZTO) thin films, with zinc acetate and tributyltin chloride as raw materials, were deposited on glass substrates by the method of metal organic chemical vapor deposition(MOCVD). The crystallization, microstructure and optical properties were investigated by scanning electronic microscope(SEM),X-ray diffraction(XRD) and ultraviolet-visible(UV-Vis)spectrophotometer. The results show that with the increase in Sn/Zn ratio, the crystal changes from wurtzite to rutile phase. When the ratio reaches 11:18,the intensity of Zn_2SnO_4 peaks appears to be the strongest and the optical band gap is about 3.27 eV. Calculated by the envelope method, the thickness of the ZTO thin films is 713.24 nm.Measured by UV-Vis spectrophotometer, the transmittance of the ZTO thin films reaches up to 80% in the wavelength range of 400-1000 nm when the Sn/Zn ratio is 7:18.
引文
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[8]Xiong J,Zhang F,Liu X,Zhao RP,Zhao XH,Tao BW.Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)_2 concentration.Rare Met.2014;33(1):70.
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[10]Choi YY,Kang SJ,Kim HK.Rapid thermal annealing effect on the characteristics of ZnSnO_3 films prepared by RF magnetron sputtering.Curr Appl Phys.2012;12(S4):S104.
[11]Jeon JH,Hwang YH,Bae BS.Bias-temperature-illumination stability of aqueous solution processed fluorine doped zinc tin oxide(ZTO:F)transistor.Eletrochem Solid-State Lett.2012;15(4):H123.
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[13]Nikolic MV,Satoh K,Ivetic T,Paraskevopoulos KM,Zorba TT,Blagojevic V,Nikolic PM.Infrared reflection spectroscopy of Zn_2SnO_4 thin films deposited on silica substrate by radio frequency magnetron sputtering.Thin Solid Films.2008;516(18):6293.
[14]Bilgin V,Kose S,Atay F,Akyuz I.The effect of Zn concentration on some physical properties of tin oxide films obtained by ultrasonic spray pyrolysis.Mater Lett.2004;58(29):3686.
[15]Manifacier JC,Gasiot J,Fillard JP.A simple method for determination of the optical constants n,k and thickness of a weakly absorbing thin film.J Phys E Sci Instrum.1976;9(11):1002.
[16]Swanepoel R.Determination of the thickness and optical constants of amorphous silicon.J Phys E Sci Instrum.1983;16(12):1214.
[17]Fragala ME,Malandrino G.Characterization of ZnO and ZnO:A1 films deposited by MOCVD on oriented and amorphous substrates.Microelectron J.2009;40(2):381.
[2]Satoh K,Kakehi Y,Okamoto A,Murakami S,Uratani F,Yotsuya T.Electrical and optical properties of Al-doped ZnO-Sn02thin films deposited by RF magnetron sputtering.Thin Solid Films.2008;516(17):5814.
[3]Sato Y,Kiyohara J,Hasegawa A,Hattori T,Ishida M,Hamada N,Shigesato Y.Study on inverse spinel zinc stannate,Zn_2SnO_4,as transparent conductive films deposited by RF magnetron sputtering.Thin Solid Films.2009;518(4):1304.
[4]Hayashi Y,Kondo K.ZnO-SnO_2 transparent conductive films deposited by opposed target sputtering system of ZnO and SnO_2targets.Vacuum.2004;74(3-4):607.
[5]Enoki H,Nakayama T,Echigoya J.The electrical and optical properties of the ZnO-SnO_2 thin films prepared by RF magnetron sputtering.Phys Status Solidi.1992;129(1):181.
[6]Xu Y,Cai YQ,Hou LY,Ma PH.Effect of Al doping concentration on microstructure,photoelectric properties and doped mechanism of AZO films.Surf Rev Lett.2014;21(3):1450040.
[7]Nishiyama H,Miura H,Yasui K,Inoue Y.Fabrication of highelectron-mobility ZnO epilayers by chemical vapor deposition using catalytically produced excited water.J Cryst Growth.2010;312(4):483.
[8]Xiong J,Zhang F,Liu X,Zhao RP,Zhao XH,Tao BW.Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)_2 concentration.Rare Met.2014;33(1):70.
[9]Avis C,Jang J.High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol-gel method.J Mater Chem.2011;21(29):10649.
[10]Choi YY,Kang SJ,Kim HK.Rapid thermal annealing effect on the characteristics of ZnSnO_3 films prepared by RF magnetron sputtering.Curr Appl Phys.2012;12(S4):S104.
[11]Jeon JH,Hwang YH,Bae BS.Bias-temperature-illumination stability of aqueous solution processed fluorine doped zinc tin oxide(ZTO:F)transistor.Eletrochem Solid-State Lett.2012;15(4):H123.
[12]Remes Z,Vanecek M,Yates HM,Evans P,Sheel DW.Optical properties of Sn02:F films deposited by atmospheric pressure CVD.Thin Solid Films.2009;517(23):6287.
[13]Nikolic MV,Satoh K,Ivetic T,Paraskevopoulos KM,Zorba TT,Blagojevic V,Nikolic PM.Infrared reflection spectroscopy of Zn_2SnO_4 thin films deposited on silica substrate by radio frequency magnetron sputtering.Thin Solid Films.2008;516(18):6293.
[14]Bilgin V,Kose S,Atay F,Akyuz I.The effect of Zn concentration on some physical properties of tin oxide films obtained by ultrasonic spray pyrolysis.Mater Lett.2004;58(29):3686.
[15]Manifacier JC,Gasiot J,Fillard JP.A simple method for determination of the optical constants n,k and thickness of a weakly absorbing thin film.J Phys E Sci Instrum.1976;9(11):1002.
[16]Swanepoel R.Determination of the thickness and optical constants of amorphous silicon.J Phys E Sci Instrum.1983;16(12):1214.
[17]Fragala ME,Malandrino G.Characterization of ZnO and ZnO:A1 films deposited by MOCVD on oriented and amorphous substrates.Microelectron J.2009;40(2):381.