微波集成电路的低频噪声测试方法
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摘要
噪声检测是小型化微波集成电路可靠性诊断的一种无损检测手段,针对GaAs PHEMT单片微波集成电路(MMIC)功率放大器的可靠性问题,进行了噪声测试实验,研究了其低频噪声的测试方法。分析了合格与失效电路的噪声功率谱密度和时间序列,并提取GaAs PHEMT MMIC功率放大器1/f噪声的幅度值、噪声指数和转折频率。测试结果表明,MMIC功率放大器的噪声主要为1/f噪声和热噪声。从噪声功率谱密度来看,失效电路的噪声比合格电路的噪声大;从时间序列来看,失效与合格电路的噪声谱幅值不同,失效电路的噪声谱幅值变化无规律且为爆裂噪声,合格电路的噪声谱幅值变化有规律且主要是1/f噪声;从噪声参量提取来看,1/f噪声的幅度值、噪声指数和转折频率均可作为噪声的表征参量。
The noise measurement is a nondestructive detection method for reliability diagnosis of miniaturized microwave integrated circuits. Aiming at the reliability problems of GaAs PHEMT monolithic microwave integrated circuit(MMIC) power amplifier, the noise test experiments were carried out. The measurement method of the low frequency noise was studied. The noise power spectral density and time series of the qualified circuits and the failure ones were tested respectively, from which the amplitude, noise index and transition frequency of 1/f noise of GaAs PHEMT MMIC power amplifier were extracted. The test results show that the noise of MMIC power amplifier is mainly 1/f noise and thermal noise. From the noise power spectral density, the noise of the failure circuit is larger than that of the qualified circuit. From the terms of time series, the noise spectral amplitude of the failure circuits is different from that of the qualified ones. The variation of the noise spectral amplitude of the failure circuits is irregular, and the noise is considered to contain burst noise. The variation of the spectral amplitude of the qualified circuits is regular, and the noise is mainly 1/f noise. From the extraction of noise parameters, the amplitude value of 1/f noise, noise index and transition frequency can be used as the characterization parameters of noise.
The noise measurement is a nondestructive detection method for reliability diagnosis of miniaturized microwave integrated circuits. Aiming at the reliability problems of GaAs PHEMT monolithic microwave integrated circuit(MMIC) power amplifier, the noise test experiments were carried out. The measurement method of the low frequency noise was studied. The noise power spectral density and time series of the qualified circuits and the failure ones were tested respectively, from which the amplitude, noise index and transition frequency of 1/f noise of GaAs PHEMT MMIC power amplifier were extracted. The test results show that the noise of MMIC power amplifier is mainly 1/f noise and thermal noise. From the noise power spectral density, the noise of the failure circuit is larger than that of the qualified circuit. From the terms of time series, the noise spectral amplitude of the failure circuits is different from that of the qualified ones. The variation of the noise spectral amplitude of the failure circuits is irregular, and the noise is considered to contain burst noise. The variation of the spectral amplitude of the qualified circuits is regular, and the noise is mainly 1/f noise. From the extraction of noise parameters, the amplitude value of 1/f noise, noise index and transition frequency can be used as the characterization parameters of noise.
引文
[1] 顾墨琳,林守远.微波集成电路技术——回顾与展望[J].微波学报,2000,16( 3):278-290. GU M L, LIN S Y. Microwave integrated circuit technology—retrospect and prospect[J].Journal of Microwaves,2000, 16(3):278-290(in Chinese).
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[3]张会,钱国明. 基于0.5 μm PHEMT的超宽带低噪声放大器[J]. 微电子学, 2017,47(4): 478-482.ZHANG H, QIAN G M. An ultra wideband 0.15 μm PHEMT low noise amplifier[J]. Microelectronics,2017,47(4):478-482(in Chinese).
[4]戴剑,要志宏,赵瑞华,等.宽带低噪声放大器单片微波集成电路[J].半导体技术, 2014,39(4): 259-263. DAI J,YAO Z H, ZHAO R H, et al. Broadband low noise amplifier MMIC[J]. Semiconductor Technology, 2014,39(4): 259-263(in Chinese).
[5]贾晓菲,陈文豪,丁兵,等.纳米MOSFET器件电流噪声测试方法研究[J]. 电子元件与材料,2016,35(12):45-48. JIA X F, CHEN W H, DING B, et al. Current noise measurement methods in nano-MOSFET[J]. Electronic Components and Materials,2016,35(12):45-48(in Chinese).
[6]卢伟强.硅基微波低噪声放大器集成电路设计[D].成都:电子科技大学,2017.
[7]刘红侠,郑雪峰,郝跃,等. GaAs PHEMT器件的退化特性及可靠性表征方法[J]. 半导体学报,2004,25(1):77-81. LIU H X, ZHENG X F, HAO Y, et al. Device degradation and reliability characterization in GaAs PHEMT′s [J]. Journal of Semiconductors,2004, 25(1):77-81 (in Chinese).
[8]史保华,贾新章,张德胜. 微电子器件可靠性[M]. 西安:西安电子科技大学出版社,1999:160-182.
[9]GADDI R, MENOZZI R, DIECI D, et al. Bulk and surface effects of hydrogen treatment on Al/Ti-gate AlGaAs-GaAs power HFETs[C]//Proceedings of IEEE International Reliability Physics Symposium. San Diego,CA,USA,1999:110-115.
[10]SOMERVILLE M H, ERNST A, ALAMO A D. A new dynamic model for the kink effect in InAlAs/InGaAs HEMTs [C]// Proceedings of International Electron Devices Meeting. San Francisco, CA,USA, 1998, 47(5):243-246.
[11]JONES B K. Electrical noise as a measure of quality and reliability in electronic devices[J]. Advances in Electronics and Electron Physics, 1993, 87(1):201-257.
[12]JEVTIC M M. Noise as a diagnostic and prediction tool in reliability physics[J]. Microelectronics Reliability, 1995, 35(3): 455-477.
[13]CIOFI C, NERI B. Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices[J]. Journal of Physics:D, 2000, 33(21):R199- R216.
[14]SIMOEN E, CLAEYS C. Reliability aspects of the low-frequency noise behaviour of submicron CMOS technologies[J]. Semiconductor Science and Technology, 1999, 14(8): R61-R71.
[15]VANDAMME L K J. Noise as a diagnostic tool for quality and reliability of electronic devices. [J]. IEEE Transactions on Electron Devices, 1994, 41(11): 2176-2187.
[16]赵睿. 噪声测量方法用于模拟电路的故障诊断[D].吉林:东北电力大学,2008.
[17]陈文豪. 电子元器件低频电噪声测试技术及应用研究[D]. 西安:西安电子科技大学,2012.
[18]PLANA R, ESCOTTE L, LIOPIS O, et al. Noise in AlGaAs/InGaAs/GaAs pseudomorphic HEMTs from 10 Hz to 18 GHz[J]. IEEE Transactions on Electron Devices, 1993,40(5): 852-858.
[19]CHOU Y C,LI G P, YU K K, et al. Hot carrier reliabi-lity in high-power PHEMTs[C]//Proceedings of Gallium Arsenide Integrated Circuit (GaAs IC) Symposium. Orlando, FL,USA,1996:46-49.
[20] MIHAILA M, AMBERIADIS K. Noise phenomena asso-ciated with dislocations in bipolar transistors[J]. Solid-State Electronics, 1983, 26: 109-113.
[2]庄奕琪,孙青.半导体器件中的噪声及其低噪声化技术[M].北京:电子工业出版社,1993:63-218.
[3]张会,钱国明. 基于0.5 μm PHEMT的超宽带低噪声放大器[J]. 微电子学, 2017,47(4): 478-482.ZHANG H, QIAN G M. An ultra wideband 0.15 μm PHEMT low noise amplifier[J]. Microelectronics,2017,47(4):478-482(in Chinese).
[4]戴剑,要志宏,赵瑞华,等.宽带低噪声放大器单片微波集成电路[J].半导体技术, 2014,39(4): 259-263. DAI J,YAO Z H, ZHAO R H, et al. Broadband low noise amplifier MMIC[J]. Semiconductor Technology, 2014,39(4): 259-263(in Chinese).
[5]贾晓菲,陈文豪,丁兵,等.纳米MOSFET器件电流噪声测试方法研究[J]. 电子元件与材料,2016,35(12):45-48. JIA X F, CHEN W H, DING B, et al. Current noise measurement methods in nano-MOSFET[J]. Electronic Components and Materials,2016,35(12):45-48(in Chinese).
[6]卢伟强.硅基微波低噪声放大器集成电路设计[D].成都:电子科技大学,2017.
[7]刘红侠,郑雪峰,郝跃,等. GaAs PHEMT器件的退化特性及可靠性表征方法[J]. 半导体学报,2004,25(1):77-81. LIU H X, ZHENG X F, HAO Y, et al. Device degradation and reliability characterization in GaAs PHEMT′s [J]. Journal of Semiconductors,2004, 25(1):77-81 (in Chinese).
[8]史保华,贾新章,张德胜. 微电子器件可靠性[M]. 西安:西安电子科技大学出版社,1999:160-182.
[9]GADDI R, MENOZZI R, DIECI D, et al. Bulk and surface effects of hydrogen treatment on Al/Ti-gate AlGaAs-GaAs power HFETs[C]//Proceedings of IEEE International Reliability Physics Symposium. San Diego,CA,USA,1999:110-115.
[10]SOMERVILLE M H, ERNST A, ALAMO A D. A new dynamic model for the kink effect in InAlAs/InGaAs HEMTs [C]// Proceedings of International Electron Devices Meeting. San Francisco, CA,USA, 1998, 47(5):243-246.
[11]JONES B K. Electrical noise as a measure of quality and reliability in electronic devices[J]. Advances in Electronics and Electron Physics, 1993, 87(1):201-257.
[12]JEVTIC M M. Noise as a diagnostic and prediction tool in reliability physics[J]. Microelectronics Reliability, 1995, 35(3): 455-477.
[13]CIOFI C, NERI B. Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices[J]. Journal of Physics:D, 2000, 33(21):R199- R216.
[14]SIMOEN E, CLAEYS C. Reliability aspects of the low-frequency noise behaviour of submicron CMOS technologies[J]. Semiconductor Science and Technology, 1999, 14(8): R61-R71.
[15]VANDAMME L K J. Noise as a diagnostic tool for quality and reliability of electronic devices. [J]. IEEE Transactions on Electron Devices, 1994, 41(11): 2176-2187.
[16]赵睿. 噪声测量方法用于模拟电路的故障诊断[D].吉林:东北电力大学,2008.
[17]陈文豪. 电子元器件低频电噪声测试技术及应用研究[D]. 西安:西安电子科技大学,2012.
[18]PLANA R, ESCOTTE L, LIOPIS O, et al. Noise in AlGaAs/InGaAs/GaAs pseudomorphic HEMTs from 10 Hz to 18 GHz[J]. IEEE Transactions on Electron Devices, 1993,40(5): 852-858.
[19]CHOU Y C,LI G P, YU K K, et al. Hot carrier reliabi-lity in high-power PHEMTs[C]//Proceedings of Gallium Arsenide Integrated Circuit (GaAs IC) Symposium. Orlando, FL,USA,1996:46-49.
[20] MIHAILA M, AMBERIADIS K. Noise phenomena asso-ciated with dislocations in bipolar transistors[J]. Solid-State Electronics, 1983, 26: 109-113.
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