双波长外腔面发射激光器
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摘要
双波长激光光源在干涉测量、非线性频率变换产生中红外及太赫兹波段相干辐射等方面有重要的应用.外腔面发射激光器具有输出功率高、光束质量好、发射波长可设计等突出优势,非常适合用于双波长的产生.用有源区为In0.185Ga0.815As/GaAs应变多量子阱、设计波长为960 nm,以及有源区为In0.26Ga0.74As/GaAsP0.02应变多量子阱、设计波长为1080 nm的两块半导体增益芯片,在一个共线Y型谐振腔中,获得了激光波长分别为953 nm和1100 nm的双波长输出,对应光谱线宽为1.1 nm和2.7 nm,波长间隔147 nm.室温下,每块增益芯片的抽运吸收功率均为5.8 W时,双波长激光器总的输出功率达到293 mW.
Dual-wavelength laser sources have important applications in the interferometry and the nonlinearfrequency-conversion generated mid-infrared or terahertz-band coherent radiation. Vertical-external-cavity surface-emitting lasers own outstanding advantages such as high output power, good beam quality and flexible emission wavelength, which make them very suitable for dual-wavelength running. In this paper, we employ a collinear Y-type cavity to produce a dual-wavelength laser. There are two semiconductor gain chips in the resonant cavity, one has an active region of In0.185 Ga0.815 As/GaAs strained multiple quantum wells and a designed wavelength of 960 nm, and the other has an active region of In0.26 Ga0.74 As/GaAsP0.02 strained multiple quantum wells and a target wavelength of 1080 nm. The peak wavelength of the photoluminescence of chip 1 is950 nm, which is 10 nm shorter than the designed wavelength under weak pump, and the peak wavelength of the photoluminescence of chip 2 is 1094 nm, which is 14 nm longer than the target wavelength under low pump.When the pump power is increased, the peak wavelengths of the photoluminescence of two gain chips are both red-shifted. The oscillating laser wavelengths are centered at 953 nm and 1100 nm, the corresponding full width at half maximum(FWHM) values of the laser spectra are 1.1 nm and 2.7 nm, respectively. The wavelength spacing of the dual-wavelength is 147 nm, and the related mid-infrared coherent radiation is about 7.1 μm on the assumption that the dual-wavelength laser is used for difference frequency generation. When the absorbed pump power of each gain chip is 5.8 W, the total output power of the dual-wavelength laser reaches 293 mW at room temperature.
Dual-wavelength laser sources have important applications in the interferometry and the nonlinearfrequency-conversion generated mid-infrared or terahertz-band coherent radiation. Vertical-external-cavity surface-emitting lasers own outstanding advantages such as high output power, good beam quality and flexible emission wavelength, which make them very suitable for dual-wavelength running. In this paper, we employ a collinear Y-type cavity to produce a dual-wavelength laser. There are two semiconductor gain chips in the resonant cavity, one has an active region of In0.185 Ga0.815 As/GaAs strained multiple quantum wells and a designed wavelength of 960 nm, and the other has an active region of In0.26 Ga0.74 As/GaAsP0.02 strained multiple quantum wells and a target wavelength of 1080 nm. The peak wavelength of the photoluminescence of chip 1 is950 nm, which is 10 nm shorter than the designed wavelength under weak pump, and the peak wavelength of the photoluminescence of chip 2 is 1094 nm, which is 14 nm longer than the target wavelength under low pump.When the pump power is increased, the peak wavelengths of the photoluminescence of two gain chips are both red-shifted. The oscillating laser wavelengths are centered at 953 nm and 1100 nm, the corresponding full width at half maximum(FWHM) values of the laser spectra are 1.1 nm and 2.7 nm, respectively. The wavelength spacing of the dual-wavelength is 147 nm, and the related mid-infrared coherent radiation is about 7.1 μm on the assumption that the dual-wavelength laser is used for difference frequency generation. When the absorbed pump power of each gain chip is 5.8 W, the total output power of the dual-wavelength laser reaches 293 mW at room temperature.
引文
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[17]Fallahi M,Fan L,Kaneda Y,Hessenius C,Hader J,Li H,Moloney J V,Kunert B,Stolz W,Koch S W,Murray J,Bedford R 2008 IEEE Photonic Tech.L.20 1700
[18]Maclean A J,Kemp A J,Calvez S,Kim J Y,Kim T,Dawson M D,Burns D 2008 IEEE J.Quantum Elect.44 216
[19]Fallahi M,Hessenius C,Kaneda Y,Hader J,Moloney J V,Kunert B,Stolz W,Koch S W 2009 Nonlinear Optics:Materials,Fundamentals and Applications Honolulu,Hawaii,July 12-17,2009 pNThC1
[20]De Groot P J,McGarvey J A 1994 US Patent 5 371
[21]Keller U,Tropper A C 2006 Phys.Rep.429 67
[22]Zhu R,Wang S,Qiu X,Chen X,Jiang M,Guo-Yu H,Zhang P,Song Y 2018 J.Lumin.204 663
[23]Abram R H,Gardner K S,Riis E,Ferguson A I 2004 Opt.Express 12 5434
[24]Alfieri C G,Waldburger D,Golling M,Keller U 2018 IEEEPhotonic Tech.L.30 525
[25]Jasik A,Sokó?A K,Broda A,Sankowska I,Wójcik-Jedlinska A,Wasiak M,Kubacka-Traczyk J,Muszalski J 2016 Appl.Phys.B 122 23
[26]Polanik M 2015 Annual Report,Institute of Optoelectronics,Ulm University 3
[27]Leinonen T,Ranta S,Laakso A,Morozov Y,Saarinen M,Pessa M 2007 Opt.Express 15 13451
[28]Hessenius C,Lukowski M,Fallahi M 2012 Appl.Phys.Lett.101 121110
[29]Lukowski M,Hessenius C,Bedford R,Fallagi M 2015 Opt.Lett.40 4174
[30]Zhang F,Gaafar M,M?ller C,Stolz W,Koch M,RahimiIman A 2016 IEEE Photonic Tech.L.28 927
[31]Sandusky J V,Brueck S R J 1996 IEEE Photonic Tech.L.8313
[2]Li J 2005 Chin.J.Biomed.Eng.24 237(in Chinese)[李践2005中国生物医学工程学报24 237]
[3]Mao Q,Lit J W Y 2002 IEEE Photonic Tech.L.14 1252
[4]Schlager J B,Kawanishi S,Saruwatari M 1991 Electron.Lett.27 2072
[5]Kawase K,Mizuno M,Sohma S,Takahashi H,Taniuchi T,Urata Y,Wada S,Tashiro H,Ito H 1999 Opt.Lett.24 1065
[6]Tittel F K,Richter D,Fried A 2003 Mid-infrared Laser Applications in Spectroscopy(Springer,Berlin,Heidelberg)pp458-529
[7]Beck M,Hofstetter D,Aellen T,Faist J,Oesterle U,Ilegems M,Gini E,Melchior H 2002 Science 295 301
[8]Willer U,Saraji M,Khorsandi A,Geiser P,Schade W 2006Opt.Laser Eng.44 699
[9]Waynant R W,Ilev I K,Gannot I 2001 Phil.Trans.R.Soc.A 359 635
[10]Jeon M Y,Kim N,Shin J,Jeong J S,Han S P,Lee C W,Leem Y A,Yee D S,Chun H S,Park K H 2010 Opt.Express18 12291
[11]Jackson S D 2012 Nat.Photonics 6 423
[12]Lee B G,Belkin M A,Audet R,MacArthur J,Diehl L,Pflügl C,Capasso F,Oakley D C,Chapman D,Napoleone A,Bour D,Corzine S,H?fler G,Faist J 2007 Appl.Phys.Lett.91 231101
[13]Schiessl U P,Rohr J 1999 Infrared Phys.Tech.40 325
[14]Budni P A,Pomeranz L A,Lemons M L,Miller C A,Mosto J R,Chicklis E P 2000 J.Opt.Soc.Am 17 723
[15]Hastie J E,Calvez S,Dawson M D,Leinonen T,Laakso A,Lyytik?inen J,Pessa M 2005 Opt.Express 13 77
[16]Fan L,Hader J,Schillgalies M,Fallahi M,Zakharian A R,Moloney J V,Bedford R,MurrayJ T,Koch S W,Stolz W2005 IEEE Photonic Tech.L.17 1764
[17]Fallahi M,Fan L,Kaneda Y,Hessenius C,Hader J,Li H,Moloney J V,Kunert B,Stolz W,Koch S W,Murray J,Bedford R 2008 IEEE Photonic Tech.L.20 1700
[18]Maclean A J,Kemp A J,Calvez S,Kim J Y,Kim T,Dawson M D,Burns D 2008 IEEE J.Quantum Elect.44 216
[19]Fallahi M,Hessenius C,Kaneda Y,Hader J,Moloney J V,Kunert B,Stolz W,Koch S W 2009 Nonlinear Optics:Materials,Fundamentals and Applications Honolulu,Hawaii,July 12-17,2009 pNThC1
[20]De Groot P J,McGarvey J A 1994 US Patent 5 371
[21]Keller U,Tropper A C 2006 Phys.Rep.429 67
[22]Zhu R,Wang S,Qiu X,Chen X,Jiang M,Guo-Yu H,Zhang P,Song Y 2018 J.Lumin.204 663
[23]Abram R H,Gardner K S,Riis E,Ferguson A I 2004 Opt.Express 12 5434
[24]Alfieri C G,Waldburger D,Golling M,Keller U 2018 IEEEPhotonic Tech.L.30 525
[25]Jasik A,Sokó?A K,Broda A,Sankowska I,Wójcik-Jedlinska A,Wasiak M,Kubacka-Traczyk J,Muszalski J 2016 Appl.Phys.B 122 23
[26]Polanik M 2015 Annual Report,Institute of Optoelectronics,Ulm University 3
[27]Leinonen T,Ranta S,Laakso A,Morozov Y,Saarinen M,Pessa M 2007 Opt.Express 15 13451
[28]Hessenius C,Lukowski M,Fallahi M 2012 Appl.Phys.Lett.101 121110
[29]Lukowski M,Hessenius C,Bedford R,Fallagi M 2015 Opt.Lett.40 4174
[30]Zhang F,Gaafar M,M?ller C,Stolz W,Koch M,RahimiIman A 2016 IEEE Photonic Tech.L.28 927
[31]Sandusky J V,Brueck S R J 1996 IEEE Photonic Tech.L.8313
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