毫米波单片平衡放大器
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摘要
研制了一款毫米波(26～40 GHz)平衡式单片放大器芯片。放大器基于0. 15μm GaAs pHEMT工艺,实现了毫米波全频段(26～40 GHz)增益放大。采用Lange桥平衡结构,使放大器较于单边放大器有更好的输入输出驻波比,更大的1 dB增益压缩输出功率。设计时结合pHEM T晶体管小信号和大信号模型,采用自偏和RLC并联负反馈结构,在减小芯片面积的同时提高了电路的稳定性。放大器芯片尺寸仅1. 6 mm×1. 6 mm,在工作频率26～40 GHz内,测试结果表明:输入、输出驻波比小于1. 5,增益在11 dB附近,平坦度在±0. 5 dB,1 dB增益压缩输出功率大于11 dBm。测试结果验证了设计的正确性。
A millimetre-wave (26-40 GHz) monolithic balanced amplifier was designed by utilizing the 0. 15μm GaAs pHEMT technology. Lange couplers were used for the balanced amplifier. The balanced amplifier has better input and output characteristic than that of unilateral amplifier. The output 1 dB compression power is higher than that of the original unilateral amplifier. Small signal and large signal models of transistor were used in the design of amplifier. To reduce chip area and improve the stability,self-bias and parallel negative feedback structure were used in the amplifier. Amplifier chip size is only 1. 6 mm ×1. 6 mm.From frequency of 26 GHz to 40 GHz,the amplifier achieves the gain of 11 dB with a good flatness of ± 0. 5dB only,input and output VSWRs better than 1. 5 and an output 1 dB compression power over 11 dBm. The design agrees well with the measured results of the balanced amplifier.
A millimetre-wave (26-40 GHz) monolithic balanced amplifier was designed by utilizing the 0. 15μm GaAs pHEMT technology. Lange couplers were used for the balanced amplifier. The balanced amplifier has better input and output characteristic than that of unilateral amplifier. The output 1 dB compression power is higher than that of the original unilateral amplifier. Small signal and large signal models of transistor were used in the design of amplifier. To reduce chip area and improve the stability,self-bias and parallel negative feedback structure were used in the amplifier. Amplifier chip size is only 1. 6 mm ×1. 6 mm.From frequency of 26 GHz to 40 GHz,the amplifier achieves the gain of 11 dB with a good flatness of ± 0. 5dB only,input and output VSWRs better than 1. 5 and an output 1 dB compression power over 11 dBm. The design agrees well with the measured results of the balanced amplifier.
引文
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[2]李凯.平衡式低噪声放大器设计[D].成都:电子科技大学,2015.
[3]Zhang Z N,Huang Q H,Hao M L,et al.Design of a24-40 GHz balanced low noise amplifier using Lange couplers[J].Journal of Semiconductors,2009:72-75.
[4]李志群,王志功.射频集成电路与系统[M].北京:科学出版社,2008:200-220.
[5]汪亭.S波段低噪声放大器研究与设计[D].南京:南京理工大学,2013.
[6]王雨桐,吴洪江,刘永强.一款25~45 GHz宽带M M IC低噪声放大器[J].太赫兹科学与电子信息学报,2017,15(3):446-449.
[7]Cuadrado-Call D,Georg D,Fulle G.A Ga As Ka-band(26-36 GHz)LNA for radio astronomy[C]//IEEEInternational M icrow ave and RF Conference.NY,USA:IEEE,2014:301-303.
[8]Ko S,Lee H D,Kim C H,et al.A 21.9-d B gain 18.9-35.9-GHz low noise amplifier using In Ga As E-mode0.15-μm p HEM T Technology[C]//Asia Pacific M icrow ave Conference.NY,USA:IEEE,2017:1-4.
[9]Yang X,Yang H,Zhang H Y,et al.A monolithic 60GHz balanced low noise amplifier[J].Journal of Semiconductors,2015,36(4):110-114.
[10]彭龙新,李建平.微波毫米波宽带单片低噪声放大器[J].固体电子学研究与进展,2008(2):203-207.