脉冲激光沉积Er:LiNbO_3薄膜及1.54μm光致发光的研究
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摘要
利用脉冲激光沉积(PLD)技术,通过双靶(Er_3O_2/LiNbO_3)交替与脉冲激光作用,在SiO_2/Si衬底上制备了c-轴择优取向的Er掺杂LiNbO_3(Er:LiNbO3)薄膜。用X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)、台阶仪及光致发光(PL)光谱对制备的掺杂薄膜进行了表征。研究了衬底温度、O_2压及沉积时间对Er:LiNbO_3薄膜结晶、表面形貌及PL性能的影响。结果发现,衬底温度低于300℃时制备的Er:LiNbO_3薄膜为非晶膜,随衬底温度升高,薄膜出现(006)衍射峰,并且其强度随衬底温度升高而增大;O_2压变化对利用双靶沉积获得的Er:LiNbO_3薄膜择优取向及(006)衍射峰强度影响不明显;沉积时间越长Er:LiNbO_3薄膜中Er~(3+)浓度越大,但结晶择优取向变差;利用532nm波长激光泵浦,室温下,在1537nm波长处测得很强的光致荧光峰,而且沉积时间越长谱峰越尖锐强度越大。
Er-doped LiNbO_3(Er:LiNbO_3)films with high c-axis oriented crystallites were prepared on SiO_2/Si substrates by pulsed laser deposition(PLD)with dual targets(Er3 O2/LiNbO_3)alternately.The fabricated Er-doped LiNbO_3 films were characterized by X-ray diffraction(XRD),field emission scanning electron microscopy(FESEM),step meter and photoluminescence(PL)spectrum.The effects of substrate temperature,oxygen pressure and deposition time on the crystallization,surface morphology and luminescence properties of Er:LiNbO_3 films were investigated.The results show that when the substrate temperature is lower than 300℃,the Er:LiNbO_3 thin film is amorphous film.With the increase of substrate temperature,the diffraction peak of(006)appears and its peak intensity is increased.The impacts of oxygen pressure on the preferential orientation and the(006)diffraction peak intensity of the Er:LiNbO_3 thin film obtained by dual targets deposition are not obvious.With the increase of the deposition time,the Er~(3+) concentration in the Er:LiNbO_3 film is increased,but the c-axis orientation of the film crystallization is decreased.When the samples are pumped at 532 nm,a strong room-temperature PL spectrum peak centered at 1537 nm is yielded.Moreover,PL intensity is increased with the increase of the deposition time.
Er-doped LiNbO_3(Er:LiNbO_3)films with high c-axis oriented crystallites were prepared on SiO_2/Si substrates by pulsed laser deposition(PLD)with dual targets(Er3 O2/LiNbO_3)alternately.The fabricated Er-doped LiNbO_3 films were characterized by X-ray diffraction(XRD),field emission scanning electron microscopy(FESEM),step meter and photoluminescence(PL)spectrum.The effects of substrate temperature,oxygen pressure and deposition time on the crystallization,surface morphology and luminescence properties of Er:LiNbO_3 films were investigated.The results show that when the substrate temperature is lower than 300℃,the Er:LiNbO_3 thin film is amorphous film.With the increase of substrate temperature,the diffraction peak of(006)appears and its peak intensity is increased.The impacts of oxygen pressure on the preferential orientation and the(006)diffraction peak intensity of the Er:LiNbO_3 thin film obtained by dual targets deposition are not obvious.With the increase of the deposition time,the Er~(3+) concentration in the Er:LiNbO_3 film is increased,but the c-axis orientation of the film crystallization is decreased.When the samples are pumped at 532 nm,a strong room-temperature PL spectrum peak centered at 1537 nm is yielded.Moreover,PL intensity is increased with the increase of the deposition time.
引文
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[19]Shim J B,Yoshimoto N,Yoshizawa M,et al.Structural characteristics of Er doped LiNbO3thin films grown by the liquid phase epitaxy method[J].Cryst.Res.Technol,2001,36(11):1209-1214.
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[2]WANG Shun-xi,Thomas A Rabson,QING Xin-su,et al.Deposition of LiNbO3 thin films on diamond/Si(100)substrates for high frequency surface acoustic wave filter applications[J].Integrated Ferroelectrics,1999,25(1-4):37-46.
[3]Tumuluri A,Rapolu M,Rao S V,et al.Third order nonlinearity in pulsed laser deposited LiNbO3thin films[A].Proc.of International Conference on Condensed Matter&Applied Physics[C].2016,1728(1):051914.
[4]Kaminow P,Carruthers J R,Turuer E H,et al.Thin-film LiNbO3electro-optic light modulator[J].An Introduction to Electrooptic Devices,1974,22(10):292-294.
[5]Bartasyte A,Margueron S,Baron T,et al.Toward highquality epitaxial LiNbO3and LiTaO3thin films for acoustic and optical applications[J].Advanced Materials Interfaces,2017,4(8):1600998.
[6]Mercante A J,Yao P,Shi S,et al.110 GHz CMOS compatible thin film LiNbO3 modulator on silicon[J].Optics Express,2016,24(14):15590.
[7]Denker B,Galagan B,Ivleva L,et al.Luminescent and laser properties of Yb-Er:GdCa4O(BO3)3:a new crystal for eye-safe 1.5μm lasers[J].Applied Physics B,2004,79(5):577-581.
[8]Lourenco M A,Milosevic M M,Gorin A,et al.Super-enhancement of 1.54μm emission from erbium codoped with oxygen in silicon-on-insulator[J].Scientific Reports,2016,5:37501.
[9]LI Shi-ling,DENG Feng-min,YE Yong-kai,et al.Optical waveguide and 1.54μm photoluminescence properties in RF sputtered Er/Yb-doped ZnO thin films[J].Thin Solid Films,2015,596:51-55.
[10]ZI Xing-fa,YE Qing,LIU Rui-ming,et al.Influence of O2/Ar on structure and optical properties of ZnO:Mg thin films deposited by RF magnetron sputtering[J].Journal of Optoelectronics·Laser,2015,26(5):883-888.自兴发,叶青,刘瑞明,等.氧氩流量比对RF溅射ZnO:Mg薄膜结构及光学性能的影响[J].光电子·激光,2015,26(5):883-888.
[11]Kondo S,Miyazawa S,Fushimi S,et al.Liquid phase epitaxial growth of single-crystal LiNbO3thin film[J].Appl.Phys.Lett.,1975,26(9):489-491.
[12]Matsubara K,Niki S,Watanabe M,et al.Growth of LiNbO3 epitaxial films by oxygen radical-assisted laser molecular beam epitaxdy[J].Appl.Phys.A.,1999,69(1):679-681.
[13]Takagi T,Kobayashi I,Tominaga K,et al.Preparation of LiNbO3thin films by metal-organic chemical vapor deposition[J].Nippon Kagaku Zassi,1993,(7):831-836.
[14]Partlow D P,Greggi J.Properties and microstructure of thin LiNbO3films prepared by a sol-gel process[J].Journal of materials research,1987,2(5):595-605.
[15]Lee S,Noh T W,Lee J.Control of epitaxial growth of pulsed laser deposited LiNbO3films and their electro-optic effects[J].Appl.Phys.Lett.,1996,68(4):472-474.
[16]Nakata Y,Gunji S,Okada T,et al.Fabrication of LiNbO3thin films by pulsed laser deposition and investigation of nonlinear properties[J].Applied physics A materials science&processing,2004,79(4):1279-1282.
[17]Tumuluri A,Rapolu M,Rao S V,et al.Third order nonlinearity in pulsed laser deposited LiNbO3 thin films[J].AIP.Conf.Proc.,2016,1728,020365.
[18]ZhANG Min,ZHANG Li-chun,LI Qing-shan,et al.Fabrication and the photoelectric properties ofn-ZnO/p-GaAs thin-film heterojunction photodetectors[J].Journal of Optoelectronics·Laser,2015,26(7):1278-1283.张敏,张立春,董方营,等.n-ZnO/p-GaAs异质结光电探测器光电特性研究[J].光电子·激光,2015,26(7):1278-1283.
[19]Shim J B,Yoshimoto N,Yoshizawa M,et al.Structural characteristics of Er doped LiNbO3thin films grown by the liquid phase epitaxy method[J].Cryst.Res.Technol,2001,36(11):1209-1214.
[20]Grishin A M,Khartsev S I.Luminescence in epitaxial Erdoped LiNbO3films[J].Optics Letters,2012,37(3):419-421.
[21]Langford J I,Wilson A J C.Scherrer after sixty years:a survey and some new results in the determination of crystallite size[J].Journal of Applied Crystallography,1978,11(2):102-113.
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