GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography
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摘要
Nano-hole patterned sapphire substrates(NHPSSs) were successfully prepared using a low-cost and high-efficiency approach, which is the laser interference lithography(LIL) combined with reactive ion etching(RIE) and inductively coupled plasma(ICP) techniques. Gallium nitride(Ga N)-based light emitting diode(LED) structure was grown on NHPSS by metal organic chemical vapor deposition(MOCVD). Photoluminescence(PL) measurement was conducted to compare the luminescence efficiency of the Ga N-based LED structure grown on NHPSS(NHPSS-LED) and that on unpatterned sapphire substrates(UPSS-LED). Electroluminescence(EL) measurement shows that the output power of NHPSS-LED is 2.3 times as high as that of UPSS-LED with an injection current of 150 m A. Both PL and EL results imply that NHPSS has an advantage in improving the crystalline quality of Ga N epilayer and light extraction efficiency of LEDs at the same time.
Nano-hole patterned sapphire substrates(NHPSSs) were successfully prepared using a low-cost and high-efficiency approach, which is the laser interference lithography(LIL) combined with reactive ion etching(RIE) and inductively coupled plasma(ICP) techniques. Gallium nitride(Ga N)-based light emitting diode(LED) structure was grown on NHPSS by metal organic chemical vapor deposition(MOCVD). Photoluminescence(PL) measurement was conducted to compare the luminescence efficiency of the Ga N-based LED structure grown on NHPSS(NHPSS-LED) and that on unpatterned sapphire substrates(UPSS-LED). Electroluminescence(EL) measurement shows that the output power of NHPSS-LED is 2.3 times as high as that of UPSS-LED with an injection current of 150 m A. Both PL and EL results imply that NHPSS has an advantage in improving the crystalline quality of Ga N epilayer and light extraction efficiency of LEDs at the same time.
Nano-hole patterned sapphire substrates(NHPSSs) were successfully prepared using a low-cost and high-efficiency approach, which is the laser interference lithography(LIL) combined with reactive ion etching(RIE) and inductively coupled plasma(ICP) techniques. Gallium nitride(Ga N)-based light emitting diode(LED) structure was grown on NHPSS by metal organic chemical vapor deposition(MOCVD). Photoluminescence(PL) measurement was conducted to compare the luminescence efficiency of the Ga N-based LED structure grown on NHPSS(NHPSS-LED) and that on unpatterned sapphire substrates(UPSS-LED). Electroluminescence(EL) measurement shows that the output power of NHPSS-LED is 2.3 times as high as that of UPSS-LED with an injection current of 150 m A. Both PL and EL results imply that NHPSS has an advantage in improving the crystalline quality of Ga N epilayer and light extraction efficiency of LEDs at the same time.
引文
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[19]Mei-Tan Wang,Kuan-Yung Liao and Li Yun-Li,IEEE Photonics Technology Letters 23,962(2011).
[2]Nakada N.,Nakaji M.,Ishikawa H.,Egawa T.,Umeno M.and Jimbo T.,Applied Physics Letters 76,1804(2000).
[3]Guo Hao,Chen Hongjun,Zhang Xiong,Zhang Peiyuan,Liu Jianjun,Liu Honggang and Cui Yiping,Optical Engineering 52,63402(2013).
[4]Kim Ja-Yeon,Kwon Min-Ki,Park Seong-Ju,Kim Sang Hoon and Lee Ki-Dong,Applied Physics Letters96,251103(2010).
[5]Tadatomo Kazuyuki,Okagawa Hiroaki,Ohuchi Youichiro,Tsunekawa Takashi,Imada Yoshiyuki,Kato Munehiro and Taguchi Tsunemasa,Japanese Journal of Applied Physics 40,L583(2001).
[6]P.C.Tsai,Ricky W.Chuang,Y.K.Su,Journal of Lightwave Technology 25,591(2007).
[7]Jae-Hoon Lee,J.T.Oh,Y.C.Kim and Jung-Hee Lee,IEEE Photonics Technology Letters 220,1563(2008).
[8]Yamada Motokazu,Mitani Tomotsugu,Narukawa Yukio,Shioji Shuji,Niki Isamu,Sonobe Shinya,Deguchi Kouichiro,Sano Masahiko and Mukai Takashi,Japanese Journal of Applied Physics 41,L1431(2002).
[9]Huang H.W.,Lin C.H.,Huang J.K.,Lee K.Y.,Lin C.F.,Yu C.C.,Tsai J.Y.,Hsueh R.,Kuo H.C.and Wang S.C.,Materials Science and Engineering:B 164,76(2009).
[10]Xia D.,Ku Z.,Lee S.C.and Brueck S.R.,Advanced Materials 23,147(2011).
[11]Zhang Yonghui,Wei Tongbo,Wang Junxi,Fan Chao,Chen Yu,Hu Qiang and Li Jinmin,Journal of Crystal Growth 394,7(2014).
[12]Cho Joong-Yeon and Lee Heon,Journal of Photopolymer Science and Technology 28,5(2015).
[13]Ignacio Martín-Fabiani,Stephen Riedel,Daniel R.Rueda,Jan Siegel,Johannes Boneberg,Tiberio A.Ezquerra and Nogales Aurora,American Chemical Society 30,8973(2014).
[14]Lu C.and Lipson R.H.,Laser&Photonics Reviews 4,568(2009).
[15]Xuan Ming-dong,Dai Long-gui,Jia Hai-qiang and Chen Hong,Optoelectronics Letters 10,51(2014).
[16]Liu Guoqiang,Zhang Jin and Zhou Chongxi,High Power Laser and Particle Beams 23,(2011).(in Chinese)
[17]Chen H.,Zhang Q.and Chou S.Y.,Nanotechnology26,085302(2015).
[18]Chen Gui-chu and Fan Guang-han,Optoelectronics Letters 10,250(2014).
[19]Mei-Tan Wang,Kuan-Yung Liao and Li Yun-Li,IEEE Photonics Technology Letters 23,962(2011).