Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer
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摘要
Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy, we propose a BGaN buffer with a B-content of 1% to enhance two-dimensional electron gas(2 DEG) confinement in a short-gate AlGaN/GaN highelectron mobility transistor(HEMT). Based on the two-dimensional TCAD simulation, the direct current(DC) and radio frequency(RF) characteristics of the AlGaN/GaN/B_(0.01)Ga_(0.99)N structure HEMTs are theoretically studied. Our results show that the BGaN buffer device achieves good pinch-off quality and improves RF performance compared with GaN buffer device. The BGaN buffer device can allow a good immunity to shift of threshold voltage for the aspect ratio(LG/d)down to 6, which is much lower than that the GaN buffer device with L_G/d=11 can reach. Furthermore, due to a similar manner of enhancing 2 DEG confinement, the B_(0.01)Ga_(0.99)N buffer device has similar DC and RF characteristics to those the AlGaN buffer device possesses, and its ability to control short-channel effects(SCEs) is comparable to that of an Al_(0.03)Ga_(0.97)N buffer. Therefore, this BGaN buffer with very small B-content promises to be a new method to suppress SCEs in GaN HEMTs.
Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy, we propose a BGaN buffer with a B-content of 1% to enhance two-dimensional electron gas(2 DEG) confinement in a short-gate AlGaN/GaN highelectron mobility transistor(HEMT). Based on the two-dimensional TCAD simulation, the direct current(DC) and radio frequency(RF) characteristics of the AlGaN/GaN/B_(0.01)Ga_(0.99)N structure HEMTs are theoretically studied. Our results show that the BGaN buffer device achieves good pinch-off quality and improves RF performance compared with GaN buffer device. The BGaN buffer device can allow a good immunity to shift of threshold voltage for the aspect ratio(LG/d)down to 6, which is much lower than that the GaN buffer device with L_G/d=11 can reach. Furthermore, due to a similar manner of enhancing 2 DEG confinement, the B_(0.01)Ga_(0.99)N buffer device has similar DC and RF characteristics to those the AlGaN buffer device possesses, and its ability to control short-channel effects(SCEs) is comparable to that of an Al_(0.03)Ga_(0.97)N buffer. Therefore, this BGaN buffer with very small B-content promises to be a new method to suppress SCEs in GaN HEMTs.
Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy, we propose a BGaN buffer with a B-content of 1% to enhance two-dimensional electron gas(2 DEG) confinement in a short-gate AlGaN/GaN highelectron mobility transistor(HEMT). Based on the two-dimensional TCAD simulation, the direct current(DC) and radio frequency(RF) characteristics of the AlGaN/GaN/B_(0.01)Ga_(0.99)N structure HEMTs are theoretically studied. Our results show that the BGaN buffer device achieves good pinch-off quality and improves RF performance compared with GaN buffer device. The BGaN buffer device can allow a good immunity to shift of threshold voltage for the aspect ratio(LG/d)down to 6, which is much lower than that the GaN buffer device with L_G/d=11 can reach. Furthermore, due to a similar manner of enhancing 2 DEG confinement, the B_(0.01)Ga_(0.99)N buffer device has similar DC and RF characteristics to those the AlGaN buffer device possesses, and its ability to control short-channel effects(SCEs) is comparable to that of an Al_(0.03)Ga_(0.97)N buffer. Therefore, this BGaN buffer with very small B-content promises to be a new method to suppress SCEs in GaN HEMTs.
引文
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[17]Liu K,Sun H,AlQatari F,Guo W,Liu X,Li J,Castanedo C G T and Li X 2017 Appl.Phys.Lett.111 222106
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[26]Int.S I L V A C O 2016 ATLAS User’s Manual Device Simulation Software(Santa Clara:CA)p.2
[27]Ambacher O,Majewski J,Miskys C,Link A,Hermann M,Eickhoff M,Stutzmann M,Bernardini F,Fiorentini V,Tilak V,Schaff B and Eastman L F 2002 J.Phys.:Condens.Matter 14 3399
[28]Vitanov S,Palankovski V,Maroldt S and Quay R 2010 Solid-State Electron.54 1105
[29]Albrecht J D,Wang R P,Ruden P P,Farahm,M and Brennan K F 1998J.Appl.Phys.83 4777
[30]Luo J,Zhao S L,Mi M H,Chen W W,Hou B,Zhang J C,Ma X H and Hao Y 2016 Chin.Phys.B 25 027303
[2]Wang X,Huang S,Zheng Y,Wei K,Chen X,Zhang H and Liu X 2014IEEE Trans.Electron Dev.61 1341
[3]Kim D H,Park H,Eom S K,Jeong J S,Cha H Y and Seo K S 2018IEEE Electron Dev.Lett.39 995
[4]Jessen G H,Fitch R C,Gillespie J K,Via G,Crespo A,Langley D,Denninghoff D J,Trejo M and Heller E R 2007 IEEE Trans.Electron Dev.54 2589
[5]Guerra D,Akis R,Marino F A,Ferry D K,Goodnick S M and Saraniti M 2010 IEEE Electron Dev.Lett.31 1217
[6]Uren M J,Nash K J,Balmer R S,Martin T,Morvan E,Caillas N,Delage S L,Ducatteau D,Grimbert B and De Jaeger J C 2006 IEEE Trans.Electron Dev.53 395
[7]Palacios T,Chakraborty A,Heikman S,Keller S,DenBaars S P and Mishra U K 2006 IEEE Electron Dev.Lett.27 13
[8]Han T C,Zhao H D,Yang L and Wang Y 2017 Chin.Phys.B 26 107301
[9]Zhang M,Ma X H,Mi M H,He Y L,Hou B,Zheng J X,Zhu Q,Chen L X,Zhang P and Yang L 2017 Appl.Phys.Lett.110 193502
[10]Han T C,Zhao H D,Peng X C and Li Y H 2018 Superlattices Microstruct.116 207
[11]Wang C,Zhao M D,Pei J Q,He Y L,Li X D,Zheng X F,Mao W,Ma X H,Zhang J C and Hao Y 2016 Acta Phys.Sin.65 038501(in Chinese)
[12]Ravindran V,Boucherit M,Soltani A,Gautier S,Moudakir T,Dickerson J,Voss P L,di M A,De Jaeger J C and Ougazzaden A 2012 Appl.Phys.Lett.100 243503
[13]Bishop C,Salvestrini J P,Halfaya Y,Sundaram S,Gmili Y E I,Pradere L,Marteau J Y,Assouar M B,Voss P L and Ougazzaden A 2015 Appl.Phys.Lett.106 243504
[14]Jurkevicius J,Mickevicius J,Kadys A,Kolenda M and Tamulaitis G2016 Physica B 492 23
[15]Ougazzaden A,Gautier S,Aggerstam T,Martin J,Bouchaour M,Baghdadli T,Ould Saad S,Lourdudoss S,Maloufi N,Djebbour Z and Jomard F 2007 Quantum Sensing Nanophotonic Devices IV 6475
[16]Baghdadli T,S Ould Saad Hamady,Gautier S,Moudakir T,Benyoucef B and Ougazzaden A 2009 Phys.Status Solidi C 6 S1029
[17]Liu K,Sun H,AlQatari F,Guo W,Liu X,Li J,Castanedo C G T and Li X 2017 Appl.Phys.Lett.111 222106
[18]Akiyama T,Nakamura K and Ito T 2018 Appl.Phys.Exp.11 025501
[19]Lee D S,Gao X,Guo S and Palacios T 2011 IEEE Electron Dev.Lett.32 617
[20]Wang W,Gu G,Dun S and Lv Y 2016 Semicond.Technol.41 378(in Chinese)
[21]Ho S Y,Lee C H,Tzou A J,Kou H C,Wu Y R and Huang J J 2017IEEE Trans.Electron Dev.64 1505
[22]Gautier S,Sartel C,S Ould Saad Hamady,Maloufi N,Martin J,Jomard F and Ougazzaden A 2006 Superlattices Microstruct.40 233
[23]Gautier S,Patriarche G,Moudakir T,Abid M,Orsal G,Pantzas K,Troadec D,Soltani A,Largeau L,Mauguin O and Ougazzaden A 2011J.Crystal Growth 315 288
[24]Malinauskas T,Kadys A,Stanionyte S,Badokas K,Mickevicius J,Jurkevicius J,Dobrovolskas D and Tamulaitis G 2015 Phys.Status Solidi B 252 1
[25]Kadys A,Mickevicius J,Malinauskas T,Jurkevicius J,Kolenda M,Stanionyte S,Dobrovolskas D and Tamulaitis G 2015 J.Phys.D:Appl.Phys.48 465307
[26]Int.S I L V A C O 2016 ATLAS User’s Manual Device Simulation Software(Santa Clara:CA)p.2
[27]Ambacher O,Majewski J,Miskys C,Link A,Hermann M,Eickhoff M,Stutzmann M,Bernardini F,Fiorentini V,Tilak V,Schaff B and Eastman L F 2002 J.Phys.:Condens.Matter 14 3399
[28]Vitanov S,Palankovski V,Maroldt S and Quay R 2010 Solid-State Electron.54 1105
[29]Albrecht J D,Wang R P,Ruden P P,Farahm,M and Brennan K F 1998J.Appl.Phys.83 4777
[30]Luo J,Zhao S L,Mi M H,Chen W W,Hou B,Zhang J C,Ma X H and Hao Y 2016 Chin.Phys.B 25 027303