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正向电压对氢化锆微弧氧化阻氢膜层性能的影响
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  • 英文篇名:Anode Voltage on Hydrogen Permeation Barrier Performance of Zirconium Hydride with Micro-arc Oxidation
  • 作者:张鹏飞 ; 闫淑芳 ; 陈伟东 ; 李世江 ; 耿艳花 ; 王宏兴
  • 英文作者:ZHANG Peng-Fei;YAN Shu-Fang;CHEN Wei-Dong;LI Shi-Jiang;GENG Yan-Hua;WANG Hong-Xing;College of Materials Science and Engineering, Inner Mongolia University of Technology;Institute of Wide Band Gap Semiconductors, Xi'an Jiaotong University;
  • 关键词:氢化锆 ; 微弧氧化 ; 正向电压 ; 阻氢渗透层
  • 英文关键词:zirconium hydride;;micro-arc oxidation;;anode voltage;;hydrogen permeation barrier
  • 中文刊名:WGCL
  • 英文刊名:Journal of Inorganic Materials
  • 机构:内蒙古工业大学材料科学与工程学院;西安交通大学宽禁带半导体材料与器件研究中心;
  • 出版日期:2018-06-22 17:19
  • 出版单位:无机材料学报
  • 年:2018
  • 期:v.33;No.225
  • 基金:国家自然科学基金(51164023,51364026);; 内蒙古自然科学基金(2016MS0505);; 内蒙古工业大学科学研究项目(X201410)~~
  • 语种:中文;
  • 页:WGCL201807014
  • 页数:5
  • CN:07
  • ISSN:31-1363/TQ
  • 分类号:101-105
摘要
在偏铝酸钠-氢氧化钠-EDTA混合溶液中,采用恒压模式对氢化锆表面进行微弧氧化处理。借助场发射扫描电镜(FE-SEM)、X射线衍射仪(XRD)及真空脱氢实验,研究了不同正向电压(350~425 V)对微弧氧化膜层表面、截面、相结构及阻氢渗透性能的影响。分析结果表明:微弧氧化过程大致由阳极氧化、火花放电、微弧氧化和熄弧四个阶段组成。制备的膜层分为致密层和疏松层,致密层所占比例约为80%。随着正向电压的增大,晶粒尺寸增大,晶面间距减小,氢化锆表面微弧氧化膜层厚度由122μm增加至150μm,膜层的增长速度也随正向电压的增大而加快。但正向电压的改变对膜层的相结构并无显著影响,膜层由单斜相氧化锆和四方相氧化锆组成,当正向氧化电压为400 V时,氧化膜的PRF值达到最大值20。
        Technology of micro-arc oxidation was applied on ZrH_(1.8) in the electrolyte composed of Na AlO_2+NaOH+ Na2 EDTA in constant voltage mode. The film was characterized by field emission scanning electron microscope(FE-SEM), X-ray diffraction(XRD), and vacuum dehydrogenation experiment, respectively. The influences of anode voltage(350 to 425 V) on surface and cross-sectional morphology, structure, and hydrogen resistance properties of the hydrogen resistance film on the surface of ZrH_(1.8) were investigated. The micro-arc oxidation process can be divided into four stages: anodic oxidation, spark discharge, micro-arc oxidation and flameout. The results reveal that film obtained in the electrolyte is composed of inner dense layer and outer loose layer, and proportion of the dense layer is about 80%. Grain sizes and growth rate of the film increase while the d-spacing decreases with the increase of the anode voltage, and the thickness of the film is increased from 122 to 150 μm. However, anode voltage has no obvious influence on the structure of the film. The prepared film is composed of M-ZrO_2 and T-ZrO_2. When the anode voltage is 400 V, the permeation reduction factor value reaches the maximum of 20.
引文
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