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定向碳纳米管阵列的可控生长研究
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摘要
定向碳纳米管阵列的可控制备是其在诸多领域深入研究和推广应用的基础。本文借助化学气相沉积系统,以负载有图形化催化剂的硅片为基底,采用乙烯为碳源气体,通过调节并优化碳源浓度、生长温度和生长时间等工艺过程参数,系统研究了碳源输送时间即碳纳米管阵列生长时间(1min-30min范围)和生长温度(600℃-900℃范围)对碳纳米管阵列结构的影响规律,得到定向碳纳米管图形化生长所处不同阶段的阵列结构,如图1所示,分别为卷曲状、圆筒状和圆柱状的多壁碳纳米管阵列的SEM图。结果表明,随着时间的延长,碳纳米管阵列首先呈现出稀疏和边缘化生长状态,通过气流量可以使其呈现卷曲生长。随着生长温度的提高,单个碳纳米管阵列呈现管径增大和高度减小的趋势。通过协调各个工艺过程参数,可以对碳纳米管阵列结构进行一定高度、结构和排布状态的调节。为定向碳纳米管的开发应用奠定了基础。
Aligned carbon nanotube arrays with different structures were prepared by chemical vapor deposition.The patterned catalyst included Al_2O_3 and Fe film was obtained by coating and lithography process. The diameter of a single catalyst array is 6 μm. Ethylene is the carbon source and the transportation time is adjusted within 1-30 minutes. As the time prolonged, the carbon nanotube arrays are in a state of curl, cylinder, and the maximum height of 100μm. In the beginning stage, it is showing the edge of the growth and the arrays is sparse. With the increase of temperature from 600℃ to 900℃, the array becomes thicker and shorter. The results showed that carbon nanotube arrays structure can be adjusted by optimizing the process parameters.
引文
[1]H.Wang,Z.F.Ren.Nanotechnology,2011,22(40):405601
    [2]H.Shi,J.G.Ok,H.W.Baac,L.J.Guo.Appl.Phys.Lett.2011,99:211103

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