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薄规格取向硅钢二次再结晶过程中Goss织构演变的Monte Carlo模拟
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摘要
利用EBSD技术获取了薄规格取向硅钢(0.18mm厚)初次再结晶样品表面晶粒的取向数据并以此构建模拟的初始组织。采用Potts模型Monte Carlo方法对薄规格取向硅钢二次再结晶过程进行了模拟仿真,分析了表面能对Goss织构演变的影响。结果表明:Goss取向晶粒与相邻晶粒的表面能差是Goss取向晶粒异常长大的重要驱动力:表面能差存在一个临界值(≈12%),只有当表面能差大于此临界值时才会发生表面能驱动的Goss取向晶粒异常长大。
The starting microstructure for the simulation was generated from Electron Back Scattering Diffraction(EBSD) orientation imaging mappings of thin-gauge(0.18 mm) Fe-3%Si steel recrystallized samples.The second recrystallization of thin-gauge Fe-3%Si steel was simulated by Monte Carlo Potts model and the effect of surface energy on Goss texture evolution was analyzed.The results suggest that the surface energy difference between Goss oriented grain and its neighboring grains is an important driving force of the abnormal Goss grain growth.And There is a critical value for surface energy difference(≈ 12%),and the Goss oriented grains can grow in an abnormal way only when the surface energy difference is greater than the critical value.
引文
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