二维极限下的有机半导体外延生长与器件
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摘要
有机场效应晶体管是有机电子器件最基本的结构单元,其载流子电荷在靠近电介质界面处几个单分子层内进行二维传导,因此在二维极限下研究有机晶体结构与性质关系显得尤为重要。近二十年来,有机半导体体材料的迁移率取得了突破性的进展,然而由于无序、缺陷及杂质的存在,研究高质量的少层有机分子晶体及探索有机半导体体材料的本征输运特性带还存在巨大的挑战。我们尝试利用范德华外延生长法在二维石墨烯和氮化硼衬底上生长出高质量的、厚度可控的有机分子晶体,利用此方法得到的二维或少层有机分子晶体不仅可以制备出高性能有机场效应晶体管,而且还为研究有机半导体结构与性质的关系提供了一个理想的平台。精确控制有机分子晶体的生长工艺为制备出高精度有机异质结提供了潜在的可能。
It has been well known for 20 years that in organic field-effect transistors(OFETs), the most fundamental device unit in organic electronics, charge transport occurs two-dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has dramatically increased over the past two decades, growth of high-quality few-layer organic crystals and the probing of their intrinsic charge transport still remains difficult due to excessive disorders and traps in ultrathin organic films. Here I will show that van der Waals epitaxy of high-quality molecular crystal down to monolayer is possible on graphene and BN. This class of materials can not only make high-performance OFETs but also serve as a powerful platform to study intrinsic structure-property relationship. Precise control of epitaxy offers new possibilities in achieving well-defined heterostructures based on organic materials.
引文
[1]D.W.He et al.,Nat.Commun.2014,5:5162.
    [2]D.W.He et al.,Appl.Phys.Lett.2015,107:183103.
    [3]Y.H.Zhang et al.,Phys.Rev.Lett.2016,116:016602.
    [4]X.L.Liu et al.,Adv.Mater..In press(2016).

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