摘要
采用激光溅射的方法产生了铬掺杂硅Cr_nSi_(12)~-(n=1,2,3)系列负离子团簇,通过对Cr_nSi_(12)~-(n=1,2,3)负离子团簇进行光电子能谱研究获得该系列团簇的垂直脱附能VDEs和绝热脱附能ADEs。我们采用密度泛函方法计算光电子能谱与密度泛函方法研究Cr_nSi_(12)~-(n=1,2,3),获得Cr_nSi_(12)~-(n=1,2,3)团簇的结构,认识到Cr_nSi_(12)~-(n=1,2,3)团簇电子分布、磁性等性质,阐明了多个过渡金属对硅笼结构的稳定作用。
Chromium-doped silicon cluster anions, CrnSi_(12)~-(n=1,2,3), were generated by laser vaporization and investigated by anion photoelectron spectroscopy. The vertical detachment energies(VDEs) and adiabatic detacment energies(ADEs) of these clusters have been obtained. Combined with the density functional calculations, we are investigating the geometry structures and the electronic structures of these clusters. With these experimental and theoretical methods, we want to illustate the effect of multiple TM atoms on the equilibrium structures of silicon frameworks, as well as the electronic and magnetic properties of TM-Si binary clusters.
引文