大面积高质量单层MoS_2薄膜的可控生长及其特性研究
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- 英文论文题名：Scalable growth of high-quality monolayer MoS_2 thin film and its properties
- 论文作者：时东霞 ; 张广宇
- 英文论文作者：Dongxia Shi ; Guangyu Zhang ; Institut of Physics ; Chinese Academy of Sciences
- 年：2016
- 作者机构：中国科学院物理研究所;
- 论文关键词：MoS2 ; 化学气相沉积 ; 氧气 ; 外延生长 ; 高质量
- 会议召开时间：2016-07-03
- 会议录名称：中国化学会第30届学术年会摘要集-论坛二：新型前沿交叉化学论坛
- 语种：中文
- 分类号：TQ136.12;TB383.2
- 学会代码：ZGHY
- 会议名称：中国化学会第30届学术年会-论坛二 ; 新型前沿交叉化学论坛
- 会议地点：中国辽宁大连
- 主办单位：中国化学会
- 学会名称：中国化学会
- 页数：2
- 文件大小：366k
- 原文格式：D
- 会议级别：全国
摘要
具有类石墨烯结构的二维层状MoS_2是直接带隙半导体材料,具有优异的电学和光电特性,是新型电子学和光电子学器件的基石。我们自行设计了三温区的管式炉,利用化学气相沉积系统(CVD)进行了大面积高质量MoS_2单层薄膜的生长研究。通过在反应过程中引入少量刻蚀性的氧气,不仅能够有效地抑制反应源表面的硫化"中毒"现象,延长生长时间,同时可以降低MoS_2的成核密度,促进大尺寸MoS_2单晶的生长。一系列的表征结果显示,氧气的引入不会引入额外缺陷使样品质量下降,反而会提升MoS_2的光电特性。我们推测,由于硫原子和氧原子的电子态密度类似,因此氧气的引入可以有效地修复硫空位缺陷,提升MoS_2薄膜的质量。通过调控合适的生长参数,遵循二维形核、长大、连接的生长模式,我们在两英寸Si O2衬底上直接生长得到了连续均匀高质量、具有完美的六角蜂窝状多晶结构的单层MoS_2薄膜,晶粒尺寸10mm。进而,通过氧气辅助生长,成功地在两英寸的蓝宝石衬底上外延生长了高质量的单层二硫化钼准单晶薄膜,晶粒尺寸为200mm,晶粒具有0°和60°两种取向。这种晶圆量级大尺寸、高质量的连续二硫化钼薄膜样品的生长为下一代电子学和光电子学的大规模、集成化生产提供了可能。
MoS_2 as one kind of graphene-like two-dimensional(2D) materials has been demonstrated to be a good candidate for advanced electronics, optoelectronics, and other applications. Controllable production of large-scale atomically thin MoS_2 with high-quality is essential for its industrial applications. We report a scalable growth of monolayer MoS_2 films by chemical vapor deposition in our developed 3-zones furnace. We found that the growth of MoS_2 can be greatly improved by introducing a small amount of oxygen, which not only prevent effectively the poisoning of precursors but also enhance larger grain growth. It is noted that oxygen does not degenerate the film quality by introducing additional defects but repairs chalcogen vacancies and improves the quality of growth of monolayer MoS_2 film. By the competition of growth and etching, the monolayer continuous film with 10 μm grain size is available by following typical 2D growth mode on SiO_2 substrate. Meanwhile, Van der Waals epitaxial growth of high-quality monolayer MoS_2 films with 200 mm grain size is achieved on sapphire substrate with controllable lattice orientation. Our work provides a route towards scaled-up synthesis of high-quality monolayer MoS_2 for electronic and optoelectronic devices.
MoS_2 as one kind of graphene-like two-dimensional(2D) materials has been demonstrated to be a good candidate for advanced electronics, optoelectronics, and other applications. Controllable production of large-scale atomically thin MoS_2 with high-quality is essential for its industrial applications. We report a scalable growth of monolayer MoS_2 films by chemical vapor deposition in our developed 3-zones furnace. We found that the growth of MoS_2 can be greatly improved by introducing a small amount of oxygen, which not only prevent effectively the poisoning of precursors but also enhance larger grain growth. It is noted that oxygen does not degenerate the film quality by introducing additional defects but repairs chalcogen vacancies and improves the quality of growth of monolayer MoS_2 film. By the competition of growth and etching, the monolayer continuous film with 10 μm grain size is available by following typical 2D growth mode on SiO_2 substrate. Meanwhile, Van der Waals epitaxial growth of high-quality monolayer MoS_2 films with 200 mm grain size is achieved on sapphire substrate with controllable lattice orientation. Our work provides a route towards scaled-up synthesis of high-quality monolayer MoS_2 for electronic and optoelectronic devices.
引文
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