宽带微波单片正交混频器的设计
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- 英文论文题名：Design of Broadband MMIC IQ Mixer
- 论文作者：罗光 ; 徐锐敏
- 英文论文作者：LUO Guang ; XU Rui-min ; Fundamental Science on EHF Laboratory ; University of Electronic Science and Technology of China
- 年：2016
- 作者机构：电子科技大学极高频复杂系统国防重点学科实验室;
- 论文关键词：正交混频器 ; 镜频抑制 ; 变频损耗 ; 单片微波集成电路
- 英文论文关键词：IQ mixer ; image rejection ; conversion losses ; MMIC
- 会议召开时间：2016-08-17
- 会议录名称：2016年全国军事微波、太赫兹、电磁兼容技术学术会议论文集
- 语种：中文
- 分类号：TN773
- 学会代码：WBXB
- 会议名称：2016年全国军事微波、太赫兹、电磁兼容技术学术会议
- 会议地点：中国陕西西安
- 主办单位：中国电子学会微波分会、天线与微波技术重点实验室
- 学会名称：《微波学报》编辑部
- 页数：4
- 文件大小：519k
- 原文格式：D
- 会议级别：全国
摘要
本文采用WIN 0.15um Ga As PHEMT工艺设计了一款6~10GHz的微波无源单片集成正交混频器。由于在本振端和射频端都采用了螺旋型的Marehand巴伦结构,从而使芯片面积得到了极大的改善,芯片的总面积为1.5mm×1.15mm。在所要求的频率范围之内,ADS仿真结果表明:变频损耗小于10d B,典型值为7d B;镜频抑制大于25d B,典型值是35d B;LO到RF的隔离度大于40d B,本振到中频的隔离度大于20d B,射频到中频的隔离度大于30d B。
In this paper, a broadband MMIC IQ mixer is presented. It is designed using WIN 0.15 Ga As PHEMT process with working frequency 6~10GHz. The mixer employs spiral Balun structure at RF port and LO port. As consequence, the chip size is reduced remarkably, only 1.5mm×1.15 mm. During the requested frequency range, the ADS simulated result shows that, the proposed IQ mixer has conversion losses less than 10 d B, typical value of 7 d B, the image rejection is larger than 25 d B, typical value of 35 d B, the isolation between LO port and RF port is more than 40 d B, the isolation between LO port and IF port is greater than 20 d B, the isolation between RF port and IF port is better than 30 d B.
In this paper, a broadband MMIC IQ mixer is presented. It is designed using WIN 0.15 Ga As PHEMT process with working frequency 6~10GHz. The mixer employs spiral Balun structure at RF port and LO port. As consequence, the chip size is reduced remarkably, only 1.5mm×1.15 mm. During the requested frequency range, the ADS simulated result shows that, the proposed IQ mixer has conversion losses less than 10 d B, typical value of 7 d B, the image rejection is larger than 25 d B, typical value of 35 d B, the isolation between LO port and RF port is more than 40 d B, the isolation between LO port and IF port is greater than 20 d B, the isolation between RF port and IF port is better than 30 d B.
引文
[1]徐兴福.ADS2011射频电路设计与仿真实例[M].北京:电子工业出版社,2011.277
[2]赵文文,李跃华.Ka波段相位平衡式镜频抑制混频器的设计[J].微波学报,2014.126-130
[3]喻梦霞,李桂萍.微博固态电路[M].成都:电子科技大学出版社,2008,.1-338
[4]吴婷,叶宝盛,吴君,王鲁豫.任意耦合度集总宽带正交定向耦合器的研究[J].微波学报,2010.385-388
[5]J.REED and G.J.WHEELER.A Method of Analysis of Symmetrical Four-Port Networks.IRE Transaction on Microwave Theory and Techniques.246-252
[6]刘赛尔.X波段单片集成宽带正交混频器芯片设计[D].浙江大学:2011
[2]赵文文,李跃华.Ka波段相位平衡式镜频抑制混频器的设计[J].微波学报,2014.126-130
[3]喻梦霞,李桂萍.微博固态电路[M].成都:电子科技大学出版社,2008,.1-338
[4]吴婷,叶宝盛,吴君,王鲁豫.任意耦合度集总宽带正交定向耦合器的研究[J].微波学报,2010.385-388
[5]J.REED and G.J.WHEELER.A Method of Analysis of Symmetrical Four-Port Networks.IRE Transaction on Microwave Theory and Techniques.246-252
[6]刘赛尔.X波段单片集成宽带正交混频器芯片设计[D].浙江大学:2011