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碳化硅量子点荧光特性及其致病镰刀菌活体细胞标记机制
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摘要
研究了腐蚀法制各的碳化硅量子点荧光特性及其致病镰刀菌活体细胞标记强度与机制。结果表明当激发光为320nm时SiC量子点光致发光强度最大,随着激发光波长增加,发射光波长出现红移现象,且具有较高的斯托克斯位移,由于荧光发射可以全色调谐,从而实现了致病镰刀菌的近紫外荧光检测,可用来对自发荧光细胞的有效检测与定量分析。进一步对致病镰刀菌活体细胞SiC量子点荧光标记机制的研究结果表明,量子点通过网格蛋白依赖的内吞方式进入活体细胞内部,并均匀分布,从而实现了对致病镰刀菌的稳定荧光标记。另外基于实验结果与理论分析,提出了致病镰刀菌SiC量子点荧光标记模型。
Fluorescence characteristics of silicon carbide quantum dots(SiC-QDs) prepared by chemical corrosion method and labeling mechanism for the living cells of pathogenic fusarium were explored.The results indicated that SiC-QDs photoluminescence intensity reached the maximum value when excitation wavelength of 320 nm.Red shift phenomenon of emission wavelength will occur with the excitation wavelength increasing.Because of larger Stokes shift and tunable color fluorescent,near ultraviolet detection for living cells with SiC-QDs fluorescent marking was achieved,which can effectively detect and quantitative analysis the autofluorescence cells.The results of labeling mechanism for living cells of pathogenic fusarium with SiC-QDs exhibited that quantum dots can reach the cells interior and homogeneous distribution through the clathrin endocytsis action.The living cells were so stably fluorescent labeling.Moreover,marking model for living cells with SiC-QDs was established based on the experimental results and theoretical analysis.
引文
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