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磁控溅射法制备CIGS吸收层及其光电特性
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摘要
薄膜光伏器件由于其低成本、高效率、易加工和柔性便携等优点,被认为是最具应用前景的新型太阳能电池,因而受到广泛研究和关注[1]。其中,黄铜矿结构的铜铟镓硒薄膜太阳电池(CIGS)是目前效率唯一可以和单晶硅太阳能电池可比的薄膜太阳电池,是太阳能电池材料体系中能够同时兼顾高效率和低成本的、最好的和最现实的体系[2]。在该研究工作中,利用磁控溅射工艺制备了高质量的CIGS吸收层,通过对溅射工艺条件的优化和调控,并利用后期快速退火硒化处理,可制备出结晶良好,组分符合化学计量比的高质量CIGS吸收层材料。详细研究了吸收层的组分、结构、形貌对器件效率的影响,在器件结构优化的基础上得到具有较高的光电转换能力的CIGS薄膜光伏器件。
Compared to wafer-based silicon solar cells, thin film solar cells take the advantage of low cost in materials utilization, which is favorable to the industrial production. Among all the thin film solar cells, polycrystalline p-type CIGS absorber materials have been considered as one of the most promising candidates for the manufacturing of low-cost thin film photovoltaic. In this work, Cu(In_(1-x)Ga_x)Se_2(CIGS) absorber layer is fabricated via magnetron sputtering. The influences of sputtering power on composition, structure of the CIGS absorber films and the performances of related solar cells are systematically investigated. The efficiency above 10% without antireflection coating has been achieved.
引文
[1]Jean,J;Brown,PR;Buonassisi,T.Energy Environ.Sci.2015,8:1200.
    [2]Hsieh,TM;Lue,SJ;Ao,JP;Sun,Y;Chang,B.J.Power Sources,2014,246:443.

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