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高开关比柔性有机单晶场效应晶体管
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摘要
场效应迁移率和开关比是评估有机场效应晶体管最重要的两个参数。我们在OTS修饰的SiO_2绝缘层上制备了Ph5T2有机单晶器件,在小的栅压扫描范围(<45V)就能获得10~8的超高开关比,整个测试流程在大气和室温条件下进行。这主要是由于分子设计降低了关态电流,绝缘层修饰提高了开态电流所导致的。Ph5T2单晶器件制备在柔性绝缘层和衬底上,经过200次反复的弯曲和恢复器件仍具有很好的稳定性。这种新型多环超薄有机单晶展示出了它们在电子器件上潜在的应用前景。
The high ON/OFF ratios of organic single crystal field-effect transistors(FETs) are obtained based on dinaphtho[3,4-d:3,4'-d]benzo[1,2-b:4,5-b]dithiophene(Ph5T2) ultrathin microplates. The ON/OFF ratio is over 10~8 with a small sweep range of gate voltage(<45 V) in air at room temperature when the dielectric is modified with octadecyltrichlorosilane(OTS). The high ON/OFF ratio is related to the decreased off-state current by molecular design and the increased on-state current by dielectric modification. The ultrathin Ph5T2 single crystal provides stable performance even though the flexible device experiences a bending/recovering test for 200 times. The high ON/OFF ratio combined with the high mobility up to 0.51 cm~2V~(-1)s~(-1) and the good flexibility of the ultrathin organic single crystals show their promising potential in electronic applications.
引文
[1]G.Horowitz,Adv.Mater.,1998,10,365.
    [2]P.Andersson,R.Forchheimer,P.Tehrani and M.Berggren,Adv.Funct.Mater.,2007,17,3074;
    [3]T.Lei,L.Wang,J.Pei,Y.Cao and J.Wang,Adv.Mater.,2010,22,1484

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