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超短时间阳极氧化制备TiO_2纳米管阵列以及超声协助负载CdS量子点
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摘要
采用120 V电压,在含0.4 M F-电解液中阳极氧化Ti片制备了高度有序且结构紧凑的Ti O2纳米管阵列。与传统阳极氧化工艺(60 V,0.27 MF~-)相比,不仅制备时间从数小时缩短到数十秒,而且所得到的TiO_2纳米管阵列与Ti基底结合紧密,光电转化性能也有明显提高。在传统的连续离子层吸附反应法(SILAR)基础上,采用超声协助的U-SILAR方法在Ti O2纳米管阵列表面负载了Cd S量子点。结果表明,与传统SILAR方法相比,U-SILAR方法所负载的CdS量子点尺寸均匀、排列紧密且数量较多;量子点/纳米管阵列体系可见光吸收明显增强,带隙从2.29 eV(SILAR)减小到2.02 eV(U-SILAR);光电流密度显著提高,而且随着光照时间的延长,U-SILAR方法得到的体系光电转化性能稳定。本文工作在优化阳极氧化工艺、提高量子点/纳米管阵列体系光电转化效率和器件性能稳定性方面具有重要的参考价值。
Well-aligned titania nanotube arrays(TNAs) were fabricated by electrochemical anodization at high voltage of 120 V in an electrolyte containing high F-concentration of 0.4 M.Compared to the TNAs obtained by traditional anodic conditions(60 V,0.27 MF~-), the resulted samples show more uniform surface, firmer structure, and stronger adhesion to the Ti substrate.Importantly, the anodization time can be greatly reduced from several hours to tens of seconds.Moreover, based on the conventional method of successive ion layer absorption and reaction(SILAR), ultrasonic assistant successive ion layer absorption and reaction(U-SILAR) wasemployed to load Cd S quantum dots onto TNAs. The results show that the uniform and densely arranged Cd S quantum dots were obtained by U-SILAR method. Furthermore, the visible light absorption and photoelectric response of the quantum dots/TNAs system were obviously enhanced,and the band gap was red shift to 2.02 eV, compared with 2.29 eV by SILAR method. This work will have significant impact on the optimization of the anodization technique and improvement of the photoelectric conversion efficiency of the quantum dots/TNAs system.
引文
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