摘要
发射活性物质是扩散阴极重要的组成部分,发射物质的优劣会对阴极甚至是器件的性能产生深远影响。本文采用共沉淀法制备发射活性物质。应用XRD,SEM等方法,对经过不同加热处理过程活性物质样品的物相成分及微观形貌进行分析。在含钪的阴极基体中浸入所研制的发射活性物质。在专用的测试系统中,对阴极样品进行了发射性能的测试。研究结果表明:经过不同温度的加热处理后,发射活性物质样品的成分有明显差异。自行研制的发射活性物质中,LN4样品的表现更为优秀,浸渍了LN4的阴极能够在1165℃获得122.77A/cm~2的拐点电流密度。
引文
[1]Ji Li;Hui Wang;Zhiqiang Yu;Na Li;Ping Wang;Wensheng Shao;Ke Zhang,"Scandate cathodes work at BVERI",Vacuum Electronics Conference(IVEC),2015 IEEE International Conference.
[2]Kordesch,M.E.;Vaughn,J.M.;Wan,C;Jamison,K.D."Model Scandate Cathodes Investigated by Thermionic-Emission Microscopy".J.Vac.Sci.Technol.B,29(2011).
[3]Ryan M.Jacobs,John H.Booske,Dane Morgan,"Electron Emission Energy Barriers and Stability of Sc203 with Adsorbed Ba and Ba-O",the Journal of Physical Chemistry,118(2014),19742-19758
[4]Jinshu Wang,Yuntao Cui,Wei Liu etc,"A Study of Scandia-Doped-lmpregnated Cathode Fabricated by Spray Drying Method",IEEE Transactions on Electron Devices,VOL.62,NO.5,1635(2015)
[5]Shengyin Yin,Zhaochuan Zhang,Zhen Peng etc."A New Impregnated Dispenser Cathode",IEEE Transactions on Electron Devices,VOL.60,NO.12,4258-4262(2013).
[6]S.Yamamoto,"Fundamental physics of vacuum electron sources,"Rep.Prog,phys,vol.69,pp.181-232,Jan.2006.
[7]J.L Cronin,"Modern dispenser cathodes",IEEE proc,vol.128,no.1,19-32(1981).
[8]A.M.Shroff,"Review of dispenser cathodes",Revue Technique Thomson-CSF,vol.23,no.4,958-965(1991).
[9]M.Shiran,M.J.Hadianfard,and M.M.Shiezadeh,"Synthesis of Nanocrystalline Electron Emissive Materials with Homogenous Composition in Nanoscale",International Journal of Chemical Engineering and Applications,Vol.4,No.3,88-91(2013)
[10]"Electronic Industrial Production Technical ManualⅣ",National Defense Industry Press,637-639(1990)
[11]Na Li,Yujuan Gao,Muyi Zhu,"A Novel of the performance of submicron tungsten Matrix Scandium Dispenser Cathode"Vocuum Electronics No.5,54-57(2011)
[12]Yuan,H.;Gu,X.;Pan,K.;Wang,Y.;Liu,W.;Zhang,K.;Wang,J.;Zhou,M.;Li,J.Characteristics of Scandate-lmpregnated Cathodes with Sub-Micron Scandia-Doped Matrices.Appl.Surf.Sci.251(2005),P106-113.
[13]Wei Liu;Jinshu Wang;Na Li et al."Preparation of the REO-Mo secondary emitter with sub-micro structure by SPS method"Vacuum Electron Sources Conference,IVESC 2004.
[14]Wolfgang Muller,"Electronic Structure of BaO/W Cathode Surfaces"IEEE TRANSACTIONS ON ELECTRON DEVICES.VOL.36.NO.Ⅰ,1989
[15]Ji Li,Z.Yu,W.Shao,et,al,"High Current Density M type Cathodes for Vacuum Electron devices",Applied Surface Science,251(2005),151-158
[16]Shih,A.;Hor,C;Mueller,D.et al,"Surface Extended X-ray Absorption Fine Structure Study of Surface BaO Layers on Tungsten Surfaces"J.Vac.Sci.Technol.A:Vac,1058-1062(1988).
[17]Getman,O.I.;Lushkin4,A.E.;Panichkina,V.V.;Rakitin,S.R."Microstructure and mechanism of emission of W-Ba dispenser cathodes",Vacuum Electron Sources Conference,IVESC 191-193(2004).
[18]Motta,C.C.Erbert,H."Work function measurements on 5-3-2 tungsten dispenser cathodes using the Miram curves",Vacuum Electron Sources Conference(IVESC),2014
[19]Huan Cheng,Jianping Jiang."Cathode Electronics",Northwest Telecommunication Engineering Institute Press,P29-33;P196-199(1986).