基于噪声特性的电子倍增CCD最佳工作模式研究
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摘要
从微光成像系统的特点可知,微光图像与一般的可见光图像不同,它是经过多次光电转换和电子倍增而形成的。由于输入照度低和背景差,系统所获取的光学信息十分微弱,使得输出图像画面上叠加有明显的随机闪烁噪声。照度越低,噪声表现越严重。另外,相对于高照度时的图像,低照度下的微光图像对比度与亮度同时下降,因而所获取的视频信息具有很低的信噪比,由此产生的输出图像没有足够的分辨率和对比度,不利于观察识别。因此,噪声是制约微光成像系统极限工作性能的关键因素。为了提高系统的成像质量,使其工作在最佳状态,有必要对其噪声特性进行深入研究,从而达到提高信噪比,提升视觉效果,增加作用距离,优化系统性能的目的。电子倍增CCD作为新型的微光成像器件,其低噪声、高灵敏度、高动态范围的特点决定了它在微光成像领域具有很大的发展潜力和应用前景。研究电子倍增CCD的噪声特性有助于深刻认识成像过程中的噪声规律,从而找到降低图像噪声,提高成像质量的具体技术途径和有效方法,进一步改善电子倍增CCD成像系统的性能,使其工作在最佳模式。
本文从电子倍增CCD的工作原理出发,详细讨论了电子倍增CCD各种噪声成分的产生机理,包括光子散粒噪声、暗电流噪声、时钟感生电荷噪声和读出噪声,分析了电子倍增CCD特有的噪声参数——噪声因子,并给出了其极限理论值,从而定量描述了电子倍增CCD倍增寄存器的输入输出特性以及在信号倍增过程中引入的额外噪声,建立了电子倍增CCD的总噪声数学模型,为深入研究电子倍增CCD的噪声特性打下了基础。
所有成像器件都有其对应的工作模式,根据器件的设计和制造工艺,应选取合适的工作模式使器件工作在最佳状态。本文基于电子倍增CCD的噪声特性,深入研究了暗电流和时钟感生电荷在不同工作模式下的表现,以暗电流噪声和时钟感生电荷噪声的总和作为选择器件工作模式的依据,结合具体的器件参数分别模拟了不同工作模式下电子倍增CCD的噪声特性,最终以积分时间为临界条件确定了电子倍增CCD的工作模式。该方法为电子倍增CCD工作模式的选取提供了切实可靠的理论依据,有助于深入理解电子倍增CCD的工作状态并设计高性能的器件。
在电子倍增CCD中,信号电荷获得增强的同时暗电流也被放大了,因此控制暗电流水平对电子倍增CCD来说非常重要。本文运用Shockly-Read-Hall理论解释了非反转模式下电子倍增CCD表面暗电流的产生过程,定量描述了表面暗电流的恢复特征时间,在此基础上提出了周期反转模式的概念,通过时钟调制使电子倍增CCD周期性地工作在反转和非反转模式,动态地抑制了电子倍增CCD的表面暗电流,进一步提高了电子倍增CCD成像系统的探测灵敏度和信噪比,使电子倍增CCD工作在最佳模式。该模式还简化了电子倍增CCD的制造工艺,降低了加工难度,对提高系统的探测灵敏度和信噪比有着重要的意义。
信噪比是表征电子倍增CCD极限探测特性的重要参数。本文根据线性系统信噪比理论分析了电子倍增CCD的极限探测性能,建立了不开增益和增益为无穷大时电子倍增CCD的信噪比极限理论模型,并对电子倍增CCD的信噪比模型进行了简化,根据积分时间的长短分为不同的噪声主导区域,讨论了像素合并模式对电子倍增CCD信噪比特性的影响,比较了ICCD与电子倍增CCD的信噪比特性,评价了两种微光成像系统的极限探测性能,更好地指导这两种微光成像系统的实际应用。
针对科学应用的需要,本文对电子倍增CCD成像系统性能参数的测试方法进行了研究。将针对普通CCD的光子-噪声传递技术加以改进,建立了新的理论模型,提出了电子倍增CCD成像系统特有的性能参数的测量方法。在理论研究的基础上,搭建实验平台完成了电子倍增CCD成像系统性能参数的测试,包括转换增益、满阱、倍增增益、读出噪声、暗电流噪声、时钟感生电荷噪声和噪声因子等。实验结果与实际指标一致,取得了较好的效果,实现了电子倍增CCD各类噪声成分的分离测量,解决了一直以来困扰广大科研工作者的噪声分离测量的难题。
From the low light level imaging system features we can see, low light level images are different from visible light images. They repeatedly experience photoelectric conversion and electron multiplying. Since the low illumination and poor background, the optical informantion obtained by the system is very weak. For this reason, the output image is accompanied by evident random flicker noise. The lower the illumination, the higher the noise. Besides, the contrast and brightness of low light level images decrease so that the signal to noise ratio and resolution of the output image are low. It is difficult to observe and recognize. Therefore, Noise is a key factor which constraints the limit performance of low light level imaging systems. In order to improve the image quality of the system and achieve the optimum condition, it is necessary to study the noise characteristics of the system. Then we can inprove the signal to noise ratio, enhance the visual effect, increase the range of visibility and optimize the system performance. The electron multiplying CCD is a new type of low light level imaging device. Due to its low noise, high sensitivity and high dynamic range, the electron multiplying CCD has great development potential and application prospects. Studying the noise characteristics of electron multiplying CCDs contributes to a profound understanding of the noise laws in the imaging process, thus lowering image noise, enhancing image quality, further improving the imaging performance of the electron multiplying CCD and making it work at the optimum mode.
In this paper, we start with the working principle of the electron multiplying CCD. Various noise components of the electron multiplying CCD and their generating mechanism are discussed in detail, including photon shot noise, dark current noise, clock induced charge noise and readout noise. Noise factor of the electron multiplying CCD is discussed and its theoretical value is shown. The noise factor quantitatively describes input and output characteristics of the electron multiplying register and the additional noise introduced by signal multiplication process. A mathematical model of total noise of the electron multiplier CCD is established. This chapter lays a foundation for further study in the noise characteristics of electron multiplying CCD.
All the imaging devices have their corresponding operating mode. According to the device design and manufacturing process, selecting an appropriate operation mode will make the device work at the best condition. Based on the noise characteristics of the electron multiplying CCD, the performance of dark current and clock induced charge at different operating modes are studied. The sum of dark current noise and clock induced charge noise is taken as a selection basis of the operation mode of the device. The noise performances of the electron multiplying CCD at different working modes are simulated through specific device parameters. The integration time is taken as the critical condition to determine the operation mode of the electron multiplying CCD. This method provides a practical and reliable theoretical basis for the operation mode selection of the electron multiplying CCD. It also contributes to a better understanding of the working condition and to design high performance devices.
In the electron multiplying CCD, signal charge and dark current are amplified at the same time. Therefore, it is important to control the dark current level. Shockley-Read-Hal theory is applied to describe the generation progress of surface dark current. Recovery characteristic time of surface dark current is described through a quantitative analysis. Periodic inverted mode is proposed based on the timing character. The electron multiplying CCD periodically switches from inverted mode to non-inverted mode by clock modulation. Then the surface dark current of the electron multiplying CCD is suppressed dynamically. The detection sensitivity and signal to noise ratio of the electron multiplying CCD are further improved and the device operates at the optimum mode. This mode simplifies the manufacturing process of the electron multiplier CCD and reduces the processing difficulty. It is of important significance for improving the detection sensitivity and signal to noise ratio of the system.
Signal to noise ratio is an important parameter for characterizing the limit detection characteristic of the electron multiplying CCD. Based on the signal to noise ratio theory of the linear system, the limit detection performance of the electron multiplying CCD is analyzed. Signal to noise ratio limit theoretical models of the electron multiplying CCD is established separately when the gain is zero or infinite. According to the length of integration time, signal to noise ratio models of the electron multiplying CCD are simplified and divided into different noise leading areas. The effects of pixel binning on the signal to noise ratio of the electron multiplying CCD are discussed. Signal to noise ratio performances of the ICCD and electron multiplying CCD are compared and the limit detection characteristics of two kinds of low light level imaging systems are evaluated. It is usefull for better guiding the practical applications of these two kinds of low light level imaging systems.
Taking into account the need of scientific applications, the performance parameters test of the electron multiplying CCD imaging system is studied. Based on the photon transfer technique of the CCD, we make improvement and establish a new theoretical mode. A measurement method of specific performance parameters of the electron multiplying CCD is proposed. At the basis of theoretical research, an experimental platform is built to complete the parameters test of the electron multiplying CCD imaging system, including convert gain, full well, multiplication gain, resdout noise, dark current noise, clock induce charge noise, noise factor and so on. This method enables the measurement of various noise components of the electron multiplying CCD. The experimental results are really good and agree with the datasheet. It solves the problems which have troubled the scientists for many years.
本文从电子倍增CCD的工作原理出发,详细讨论了电子倍增CCD各种噪声成分的产生机理,包括光子散粒噪声、暗电流噪声、时钟感生电荷噪声和读出噪声,分析了电子倍增CCD特有的噪声参数——噪声因子,并给出了其极限理论值,从而定量描述了电子倍增CCD倍增寄存器的输入输出特性以及在信号倍增过程中引入的额外噪声,建立了电子倍增CCD的总噪声数学模型,为深入研究电子倍增CCD的噪声特性打下了基础。
所有成像器件都有其对应的工作模式,根据器件的设计和制造工艺,应选取合适的工作模式使器件工作在最佳状态。本文基于电子倍增CCD的噪声特性,深入研究了暗电流和时钟感生电荷在不同工作模式下的表现,以暗电流噪声和时钟感生电荷噪声的总和作为选择器件工作模式的依据,结合具体的器件参数分别模拟了不同工作模式下电子倍增CCD的噪声特性,最终以积分时间为临界条件确定了电子倍增CCD的工作模式。该方法为电子倍增CCD工作模式的选取提供了切实可靠的理论依据,有助于深入理解电子倍增CCD的工作状态并设计高性能的器件。
在电子倍增CCD中,信号电荷获得增强的同时暗电流也被放大了,因此控制暗电流水平对电子倍增CCD来说非常重要。本文运用Shockly-Read-Hall理论解释了非反转模式下电子倍增CCD表面暗电流的产生过程,定量描述了表面暗电流的恢复特征时间,在此基础上提出了周期反转模式的概念,通过时钟调制使电子倍增CCD周期性地工作在反转和非反转模式,动态地抑制了电子倍增CCD的表面暗电流,进一步提高了电子倍增CCD成像系统的探测灵敏度和信噪比,使电子倍增CCD工作在最佳模式。该模式还简化了电子倍增CCD的制造工艺,降低了加工难度,对提高系统的探测灵敏度和信噪比有着重要的意义。
信噪比是表征电子倍增CCD极限探测特性的重要参数。本文根据线性系统信噪比理论分析了电子倍增CCD的极限探测性能,建立了不开增益和增益为无穷大时电子倍增CCD的信噪比极限理论模型,并对电子倍增CCD的信噪比模型进行了简化,根据积分时间的长短分为不同的噪声主导区域,讨论了像素合并模式对电子倍增CCD信噪比特性的影响,比较了ICCD与电子倍增CCD的信噪比特性,评价了两种微光成像系统的极限探测性能,更好地指导这两种微光成像系统的实际应用。
针对科学应用的需要,本文对电子倍增CCD成像系统性能参数的测试方法进行了研究。将针对普通CCD的光子-噪声传递技术加以改进,建立了新的理论模型,提出了电子倍增CCD成像系统特有的性能参数的测量方法。在理论研究的基础上,搭建实验平台完成了电子倍增CCD成像系统性能参数的测试,包括转换增益、满阱、倍增增益、读出噪声、暗电流噪声、时钟感生电荷噪声和噪声因子等。实验结果与实际指标一致,取得了较好的效果,实现了电子倍增CCD各类噪声成分的分离测量,解决了一直以来困扰广大科研工作者的噪声分离测量的难题。
From the low light level imaging system features we can see, low light level images are different from visible light images. They repeatedly experience photoelectric conversion and electron multiplying. Since the low illumination and poor background, the optical informantion obtained by the system is very weak. For this reason, the output image is accompanied by evident random flicker noise. The lower the illumination, the higher the noise. Besides, the contrast and brightness of low light level images decrease so that the signal to noise ratio and resolution of the output image are low. It is difficult to observe and recognize. Therefore, Noise is a key factor which constraints the limit performance of low light level imaging systems. In order to improve the image quality of the system and achieve the optimum condition, it is necessary to study the noise characteristics of the system. Then we can inprove the signal to noise ratio, enhance the visual effect, increase the range of visibility and optimize the system performance. The electron multiplying CCD is a new type of low light level imaging device. Due to its low noise, high sensitivity and high dynamic range, the electron multiplying CCD has great development potential and application prospects. Studying the noise characteristics of electron multiplying CCDs contributes to a profound understanding of the noise laws in the imaging process, thus lowering image noise, enhancing image quality, further improving the imaging performance of the electron multiplying CCD and making it work at the optimum mode.
In this paper, we start with the working principle of the electron multiplying CCD. Various noise components of the electron multiplying CCD and their generating mechanism are discussed in detail, including photon shot noise, dark current noise, clock induced charge noise and readout noise. Noise factor of the electron multiplying CCD is discussed and its theoretical value is shown. The noise factor quantitatively describes input and output characteristics of the electron multiplying register and the additional noise introduced by signal multiplication process. A mathematical model of total noise of the electron multiplier CCD is established. This chapter lays a foundation for further study in the noise characteristics of electron multiplying CCD.
All the imaging devices have their corresponding operating mode. According to the device design and manufacturing process, selecting an appropriate operation mode will make the device work at the best condition. Based on the noise characteristics of the electron multiplying CCD, the performance of dark current and clock induced charge at different operating modes are studied. The sum of dark current noise and clock induced charge noise is taken as a selection basis of the operation mode of the device. The noise performances of the electron multiplying CCD at different working modes are simulated through specific device parameters. The integration time is taken as the critical condition to determine the operation mode of the electron multiplying CCD. This method provides a practical and reliable theoretical basis for the operation mode selection of the electron multiplying CCD. It also contributes to a better understanding of the working condition and to design high performance devices.
In the electron multiplying CCD, signal charge and dark current are amplified at the same time. Therefore, it is important to control the dark current level. Shockley-Read-Hal theory is applied to describe the generation progress of surface dark current. Recovery characteristic time of surface dark current is described through a quantitative analysis. Periodic inverted mode is proposed based on the timing character. The electron multiplying CCD periodically switches from inverted mode to non-inverted mode by clock modulation. Then the surface dark current of the electron multiplying CCD is suppressed dynamically. The detection sensitivity and signal to noise ratio of the electron multiplying CCD are further improved and the device operates at the optimum mode. This mode simplifies the manufacturing process of the electron multiplier CCD and reduces the processing difficulty. It is of important significance for improving the detection sensitivity and signal to noise ratio of the system.
Signal to noise ratio is an important parameter for characterizing the limit detection characteristic of the electron multiplying CCD. Based on the signal to noise ratio theory of the linear system, the limit detection performance of the electron multiplying CCD is analyzed. Signal to noise ratio limit theoretical models of the electron multiplying CCD is established separately when the gain is zero or infinite. According to the length of integration time, signal to noise ratio models of the electron multiplying CCD are simplified and divided into different noise leading areas. The effects of pixel binning on the signal to noise ratio of the electron multiplying CCD are discussed. Signal to noise ratio performances of the ICCD and electron multiplying CCD are compared and the limit detection characteristics of two kinds of low light level imaging systems are evaluated. It is usefull for better guiding the practical applications of these two kinds of low light level imaging systems.
Taking into account the need of scientific applications, the performance parameters test of the electron multiplying CCD imaging system is studied. Based on the photon transfer technique of the CCD, we make improvement and establish a new theoretical mode. A measurement method of specific performance parameters of the electron multiplying CCD is proposed. At the basis of theoretical research, an experimental platform is built to complete the parameters test of the electron multiplying CCD imaging system, including convert gain, full well, multiplication gain, resdout noise, dark current noise, clock induce charge noise, noise factor and so on. This method enables the measurement of various noise components of the electron multiplying CCD. The experimental results are really good and agree with the datasheet. It solves the problems which have troubled the scientists for many years.
引文
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