环形半导体发光器件的研究
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摘要
GaAs衬底环形半导体发光器件的研究一直是半导体发光器件领域内研究的热点乙一。GaAs衬底环形半导体发光器件的研究大体分为光发射二极管(LED)、激光器二极管(LD)和超辐射发光二极管(SLD)三种器件类型。本文从环形器件结构设计和制备工艺角度出发,主要研究了LD和SLD两种类型的环形腔半导体发光器件。这两种环形发光器件具有不同的特点。环形LD结构器件在光路集成、高亮度输出和高光谱纯度的优良特性应用方面,被人们寄予厚望。在实现发光器件高亮度、激射光的高纯度输出方面,具有替代分布反馈式激光器(DFB)结构或分布布拉格反射激光器(DBR) LD结构的潜力。同时环形LD较容易制备,DFB或DBR结构LD制备难度大,不易于实现光路集成,更无法满足光集成的需要；环形SLD具有光谱宽、光束质量好、抑制激射能力强和亮度高的特点,同时还具有制备工艺简单的优点。
本论文研究主要内容为：
1.从环形谐振腔的波动方程出发,分析了环形的曲率对器件损耗的影响；理论上分析了影响环形半导体发光器件横模和纵模模式特性的相关因素；从环形量子阱发光器件的理论出发,对环形腔量子阱发光器件进行了理论分析,包括对电场、磁场以及顺时针方向(CW)和逆时针方向(CCW)电磁场传播的理论分析；并讨论了单向输出的基础理论。
2.进行了环形腔半导体发光器件外延片的结构研究。根据环形半导体发光器件的器件结构特点,设计出一种大光腔非对称波导外延结构,并通过MOCVD系统进行了相应的外延材料生长。并进行了相应的表征和分析,获得环形单量子阱AlGaAs/GaAs半导体材料发光器件的外延片的内量子效率为0.89、波导损耗为1.8cm-1,其阈值特性获得较大改进。
3.通过不同结构SLD器件的制备,获得了带倾角的单环SLD最大连续输出功率为100mW峰值波长为785nm,半高宽(FWHM)为24nm；集成器件结构的SLD最大连续输出功率约为400mW,峰值波长为808.5nm,半高宽(FWHM)为31nm,垂直发散角为35.4°,水平发散角为2.1°；带有8°的集成器件结构的SLD最大连续输出功率近700mW峰值波长为803.5nm,半高宽(FWHM)为36rnm,水平发散角为0.9°。
4.设计并制备了多环耦合结构的集成式半导体发光器件,器件输出功率达到10mW,水平远场角度为2.7°,在821nm处的谱线宽度0.3nm,实现Q因子达2737；发现了电流对光谱调制特性,调制范围接近10nm,同时发现电流对谱线宽度的调制范围在O.1nm左右。优化了工艺和器件结构,使得输出的斜率效率大幅改善,谱线宽度变窄,达到0.2nm,实现Q因子达4040。
The ring semiconductor light-emitting devices of GaAs-based have been an interesting direction in the field of semiconductor devices. GaAs-based ring semiconductor light-emitting device can be divided into three types of devices of LED, LD and SLD. From the structure design and process fabrication of ring semiconductor to view, the LD and SLD are two classic types of light-emitting devices. The both type's light-emitting devices have different characteristics:the device of ring LD structure in the optical integration owns excellent characteristics of high-brightness output and high spectral purity; the light-emitting device of high brightness and lasing spectrum output of high-purity has a potential trend to replace LD of DFB and DBR structure. Ring LD is easier preparation than the preparation process of LD of DFB and DBR structure, which is difficult and is not easy to achieve optical path integration, and unable to meet the needs of optical integration; ring SLD has a wide spectrum, good beam quality, strongly suppress lasing ability and high brightness characteristics, but also the process is simple.
This thesis is mainly about the study of single ring,single ring integrated with tapered and multi-ring coupling structure of the semiconductor light emitting device. The main contents are as follows:
1. From wave equation of the ring resonator to discuss loss of circular curvature of ring device; theoretically analyzes features of the transverse mode and longitudinal mode of the ring semiconductor light emitting device by relevant factors; theory and its theoretical analysis were included in the electric and magnetic fields, CW and CCW electromagnetic field propagation from ring cavity single quantum well light-emitting devices; discussion of single output direction basic theory.
2. Structure of ring semiconductor light emitting device was researched and processed by fabrication. Epitaxial material characteristics of special structure ring semiconductor device was designed, grown and valued.the epitaxial materials structure of the ring semiconductor light emitting device was characterized and analysis. Light-emitting device wafer of808nm wavelength ring AlGaAs/GaAs semiconductor materials can get of0.89internal quantum efficiency and1.4cm-1waveguide losses. Their characteristic of threshold characteristics was compared with traditional devices has been significantly improved.
3. Different structure SLDs are fabricated and designed. A tilt angle single ring SLD can be up to maximum continuous output power of100mW, its peak wavelength is785nm, and its width at half maximum (FWHM) is24nm; maximum continuous output power of the integrated structure SLD is about400mW, its peak wavelength is808.5nm, its width at half maximum (FWHM) is31nm, and its vertical divergence angle and parallel divergence angle are35.4°nd2.1°, respectively; the SLD of the integrated structure device with8°tilt angle can achieve maximum continuous output power nearly700mW,803.5nm peak-wavelength,36nm-FWHM,and parallel divergence angle of0.9°.
4. Multi-ring coupling structure of the integrated semiconductor light emitting device is designed and preparated. far-field parallel divergence angle of the device is2.7°, the output power is up to lOmW, spectral FWHM width is0.3nm at821nm, Q factor is up to2737; discovering that structure of the multi-ring coupling device has the modulation characteristics of current to spectral, modulation range is close to10nm; and it can achieve a certain injection current modulation effect to its spectrum width, and its capacity of modulation is about0.1nm. The process and device structure are optimized, the output slope efficiency is improved significantly,0.2nm-linewidth can be reached, Q factor is up to4040.
本论文研究主要内容为：
1.从环形谐振腔的波动方程出发,分析了环形的曲率对器件损耗的影响；理论上分析了影响环形半导体发光器件横模和纵模模式特性的相关因素；从环形量子阱发光器件的理论出发,对环形腔量子阱发光器件进行了理论分析,包括对电场、磁场以及顺时针方向(CW)和逆时针方向(CCW)电磁场传播的理论分析；并讨论了单向输出的基础理论。
2.进行了环形腔半导体发光器件外延片的结构研究。根据环形半导体发光器件的器件结构特点,设计出一种大光腔非对称波导外延结构,并通过MOCVD系统进行了相应的外延材料生长。并进行了相应的表征和分析,获得环形单量子阱AlGaAs/GaAs半导体材料发光器件的外延片的内量子效率为0.89、波导损耗为1.8cm-1,其阈值特性获得较大改进。
3.通过不同结构SLD器件的制备,获得了带倾角的单环SLD最大连续输出功率为100mW峰值波长为785nm,半高宽(FWHM)为24nm；集成器件结构的SLD最大连续输出功率约为400mW,峰值波长为808.5nm,半高宽(FWHM)为31nm,垂直发散角为35.4°,水平发散角为2.1°；带有8°的集成器件结构的SLD最大连续输出功率近700mW峰值波长为803.5nm,半高宽(FWHM)为36rnm,水平发散角为0.9°。
4.设计并制备了多环耦合结构的集成式半导体发光器件,器件输出功率达到10mW,水平远场角度为2.7°,在821nm处的谱线宽度0.3nm,实现Q因子达2737；发现了电流对光谱调制特性,调制范围接近10nm,同时发现电流对谱线宽度的调制范围在O.1nm左右。优化了工艺和器件结构,使得输出的斜率效率大幅改善,谱线宽度变窄,达到0.2nm,实现Q因子达4040。
The ring semiconductor light-emitting devices of GaAs-based have been an interesting direction in the field of semiconductor devices. GaAs-based ring semiconductor light-emitting device can be divided into three types of devices of LED, LD and SLD. From the structure design and process fabrication of ring semiconductor to view, the LD and SLD are two classic types of light-emitting devices. The both type's light-emitting devices have different characteristics:the device of ring LD structure in the optical integration owns excellent characteristics of high-brightness output and high spectral purity; the light-emitting device of high brightness and lasing spectrum output of high-purity has a potential trend to replace LD of DFB and DBR structure. Ring LD is easier preparation than the preparation process of LD of DFB and DBR structure, which is difficult and is not easy to achieve optical path integration, and unable to meet the needs of optical integration; ring SLD has a wide spectrum, good beam quality, strongly suppress lasing ability and high brightness characteristics, but also the process is simple.
This thesis is mainly about the study of single ring,single ring integrated with tapered and multi-ring coupling structure of the semiconductor light emitting device. The main contents are as follows:
1. From wave equation of the ring resonator to discuss loss of circular curvature of ring device; theoretically analyzes features of the transverse mode and longitudinal mode of the ring semiconductor light emitting device by relevant factors; theory and its theoretical analysis were included in the electric and magnetic fields, CW and CCW electromagnetic field propagation from ring cavity single quantum well light-emitting devices; discussion of single output direction basic theory.
2. Structure of ring semiconductor light emitting device was researched and processed by fabrication. Epitaxial material characteristics of special structure ring semiconductor device was designed, grown and valued.the epitaxial materials structure of the ring semiconductor light emitting device was characterized and analysis. Light-emitting device wafer of808nm wavelength ring AlGaAs/GaAs semiconductor materials can get of0.89internal quantum efficiency and1.4cm-1waveguide losses. Their characteristic of threshold characteristics was compared with traditional devices has been significantly improved.
3. Different structure SLDs are fabricated and designed. A tilt angle single ring SLD can be up to maximum continuous output power of100mW, its peak wavelength is785nm, and its width at half maximum (FWHM) is24nm; maximum continuous output power of the integrated structure SLD is about400mW, its peak wavelength is808.5nm, its width at half maximum (FWHM) is31nm, and its vertical divergence angle and parallel divergence angle are35.4°nd2.1°, respectively; the SLD of the integrated structure device with8°tilt angle can achieve maximum continuous output power nearly700mW,803.5nm peak-wavelength,36nm-FWHM,and parallel divergence angle of0.9°.
4. Multi-ring coupling structure of the integrated semiconductor light emitting device is designed and preparated. far-field parallel divergence angle of the device is2.7°, the output power is up to lOmW, spectral FWHM width is0.3nm at821nm, Q factor is up to2737; discovering that structure of the multi-ring coupling device has the modulation characteristics of current to spectral, modulation range is close to10nm; and it can achieve a certain injection current modulation effect to its spectrum width, and its capacity of modulation is about0.1nm. The process and device structure are optimized, the output slope efficiency is improved significantly,0.2nm-linewidth can be reached, Q factor is up to4040.
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