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基于氟化镁波导的乐甫波器件特性研究
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摘要
乐甫波传感器是声表面波传感器中的一种,它的灵敏度最高并可在液相环境中应用,使得它具有广阔的应用前景。波导层材料的性质对乐甫波传感器的各项性能指标都有很大的影响。理论与实验已证明,波导层材料除了需具备低的剪切速度和密度外,还需具有良好的弹性和低的声吸收。本文探索了一种低密度无机材料——MgF_2来作为乐甫波器件的波导材料。
     本论文采用真空蒸发法在石英基底上沉积了MgF_2薄膜,对薄膜的制备工艺参数诸如基片温度、蒸发电流以及热处理温度等进行了系统的研究。对不同工艺制备的薄膜样品进行X射线衍射和扫描电镜表征分析,结果表明,当蒸发电流为100A,基片温度为300℃时,能获得表面平整度高、晶粒大小均匀和晶粒取向单一的MgF_2薄膜,再通过300℃退火一小时后,薄膜的晶粒略有增大,表面粗糙度和致密度没有明显的变化,而且薄膜(110)峰增强的同时,出现了(220)和(211)峰。通过用QCM测量薄膜质量,用SEM断面获得薄膜厚度,根据一般计算体材料密度的方法计算得到MgF_2薄膜密度为2.9g/cm~3。
     用网络分析仪对不同厚度MgF_2波导层的乐甫波器件进行测试,得到了器件频率、插损、Q值和质量灵敏度与波导厚度的关系。结果表明,当波导层厚度为2.5μm左右时,器件的插损最小(-23.93dB),Q值最大(2193.8)。当波导层厚度为6.5μm左右时,器件获得了最大质量灵敏度416.7cm~2g~(-1)。对相同波导厚度的乐甫波器件在不同温度下进行退火处理,发现器件的Q值、质量灵敏度随退火温度的升高而增大,插损随退火温度的升高而减小。最后研究了基于PMMA/MgF_2复合波导的乐甫波器件。实验结果表明,当MgF_2层的厚度一定时,器件的质量灵敏度和插损都随着PMMA层厚度的增加而增大。我们还发现,对于相同厚度的波导,PMMA/MgF_2复合波导的乐甫波器件比MgF_2单层波导的乐甫波器件具有更高的质量灵敏度。
Love wave sensor is a kind of surface acoustic wave sensor.Due to its highest mass sensitivity and application in liquid media,love wave sensor has a promising application in the future.Properties of guiding layer materials have an important influence on the performance of love wave sensors.Both theory and experiment have shown that guiding layer materials could have a good flexibility and low sound absorption,in addition to having low shear velocity and density.A new material MgF_2 used for love wave device guiding layer material is extensively discussed in this thesis.
     In this thesis,MgF_2 thin films were prepared on quartz substrates by thermal evaporation.The deposition parameters such as substrate temperature,evaporation current,and heat treatment temperature were systematically studied.The films prepared with different parameters were characterized by X-ray diffraction(XRD) and scanning electron microscope(SEM).MgF_2 thin films with low surface roughness,uniform crystal grain,and unique crystalline orientation were obtained when the evaporation current was 100A and the substrate temperature was 300℃.After heat treatment at 300℃for one hour,film grain sizes increased slightly,but surface roughness and tightness concentration did not change obviously.In addition,MgF_2(110) peak was enhanced,while(220) peak and(211) peaks appeared simultaneously.The mass and thickness of MgF_2 films were measured by QCM and SEM respectively.As a result,the film density of MgF_2 film was 2.9g/cm~3 deduced.
     Love wave devices with different thickness of guiding layer were tested by network analyzer,and the relationship of gttiding layer thickness with frequency, insertion loss,Q value and mass sensitivity were discussed.The results showed that minimum insertion loss of-23.93dB and maximum Q value of 2193.8 were achieved with 2.5μm thick guiding layer,and the maximum sensitivity up to 416.7cm~2g~(-1) of guiding layer with thickness was 6.5μm.love wave devices were annealed at different temperature,the results showed that the Q value and mass sensitivity of the devices increased with increasing annealing temperature,but reverse tendency was observed for insertion loss.At last,a novel multilayer structure,consisting of PMMA/MgF_2/quartz, were evaluated for love wave device.The results indicated that for a certain thickness of MgF_2 layer,mass sensitivity and insertion loss of the device increased with increasing thickness of PMMA layer.For a certain thickness of guiding layer,Love wave device with PMMA/MgF_2 guiding layer has a higher mass sensitivity than that with MgF_2 guiding layer.
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