共振隧穿器件及电路的研究
|
摘要
本论文的撰写是基于天津大学电信学院新型半导体器件与集成技术组和国防科技重点实验室的合作项目——“新一代化合物半导体器件与电路的研究”进行的。为了探究共振隧穿二极管(RTD)与共振隧穿三极管(RTT)器件的特性,分别在本校实验室和中国电子科技集团第13研究所进行了芯片制作,并对器件进行了测量,对于测试结果做了详细的对比与分析。截至目前为止,本课题组和重点实验室合作,成功研制出高品质的共振隧穿二极管和国内第一只共振隧穿三极管,其电流峰谷比PVCR最高达到47。
论文完整的介绍了RTD与RTT的研制过程,从材料设计、版图设计、芯片制作、测试、结果分析等各个方面进行了详细的解释与论述。文章对芯片的测试结果进行了充分的分析与说明,对RTD正反接地造成的I-V特性曲线的差异性和负阻区出现正阻现象进行了探讨,针对RTT器件发射极-集电极正反接地造成的I-V特性曲线的差异性和开启电压VT随栅压漂移的情况进行了讨论。并对共振隧穿器件在电路中的应用理论做了深入的研究,并重点对RTD和MSM的光电集成电路进行了研制,取得了良好的效果。此外,本文还对半导体制作工艺做了比较详尽的介绍,包括MBE,光刻,腐蚀和薄膜生长等单项工艺。
整篇论文对共振隧穿器件(RTD与RTT)从设计到测试结果分析、验证进行了论述,为今后隧穿器件的研究与应用奠定了基础。
This thesis is based on the project“research on new compound semi-conductor device and circuit”which is studied by new semi-conductor device and integrating team in Telecommunication College in TJU and National Defense Technology Point Laboratory. For researching the characteristics of resonant tunneling diode (RTD) and resonant tunneling transistor (RTT), device fabrication, device test and comparison and analysis to the test results have been done. So far, we have fabricated resonant tunneling diode of high quality and the first resonant tunneling transistor in our country, whose current peak-valley ratio (PVCR) reaches 47.
The thesis introduces completely the RTD and RTT research process, including material and layout design, chip fabrication, test, the result analysis. We analyzed two aspects of theRTD results: the I-V characteristic difference between emitter grounding and collector grounding and the positive resistance in negative region. After analyzing the test result of RTT, the thesis discusses two questions: the I-V characteristic difference between emitter grounding and collector grounding, and the threshold voltage VT shifting with the gate voltage. Then we researched on the application of resonant tunneling devices in optoelectronic integrated circuit (OEIC), and the working and logical functions of the circuits were validated. We also have a discuss on semiconductor process, including MBE, photolithography, etching, and the growth of thin film.
This thesis gives the whole dissertation on the device design, test and analysis to the RTD and RTT. This work is good for the research and application of the RTD and RTT in the future.
论文完整的介绍了RTD与RTT的研制过程,从材料设计、版图设计、芯片制作、测试、结果分析等各个方面进行了详细的解释与论述。文章对芯片的测试结果进行了充分的分析与说明,对RTD正反接地造成的I-V特性曲线的差异性和负阻区出现正阻现象进行了探讨,针对RTT器件发射极-集电极正反接地造成的I-V特性曲线的差异性和开启电压VT随栅压漂移的情况进行了讨论。并对共振隧穿器件在电路中的应用理论做了深入的研究,并重点对RTD和MSM的光电集成电路进行了研制,取得了良好的效果。此外,本文还对半导体制作工艺做了比较详尽的介绍,包括MBE,光刻,腐蚀和薄膜生长等单项工艺。
整篇论文对共振隧穿器件(RTD与RTT)从设计到测试结果分析、验证进行了论述,为今后隧穿器件的研究与应用奠定了基础。
This thesis is based on the project“research on new compound semi-conductor device and circuit”which is studied by new semi-conductor device and integrating team in Telecommunication College in TJU and National Defense Technology Point Laboratory. For researching the characteristics of resonant tunneling diode (RTD) and resonant tunneling transistor (RTT), device fabrication, device test and comparison and analysis to the test results have been done. So far, we have fabricated resonant tunneling diode of high quality and the first resonant tunneling transistor in our country, whose current peak-valley ratio (PVCR) reaches 47.
The thesis introduces completely the RTD and RTT research process, including material and layout design, chip fabrication, test, the result analysis. We analyzed two aspects of theRTD results: the I-V characteristic difference between emitter grounding and collector grounding and the positive resistance in negative region. After analyzing the test result of RTT, the thesis discusses two questions: the I-V characteristic difference between emitter grounding and collector grounding, and the threshold voltage VT shifting with the gate voltage. Then we researched on the application of resonant tunneling devices in optoelectronic integrated circuit (OEIC), and the working and logical functions of the circuits were validated. We also have a discuss on semiconductor process, including MBE, photolithography, etching, and the growth of thin film.
This thesis gives the whole dissertation on the device design, test and analysis to the RTD and RTT. This work is good for the research and application of the RTD and RTT in the future.
引文
1. R. Tsu and L. Esaki, Appl. Phys. Lett. 1973,22, 562.
2. Chang L. L., Esaki L., Tsu R., Appl. Phys. Lett., 1974,24,593.
3. Scollner TCLG, Goodhue WD, Tannenwald DE, et al., Appl. Phys. Lett., 1983,43,588.
4. Alfred Cho, Molecular Beam Epitaxy (AIP, New York, 1994).
5. 谢孟贤,刘诺,化合物半导体材料与器件,成都:电子科技大学出版社,2000
6. P. D. Dapkus, Annu. Rev. Mater. Sci. 1982,12,243.
7. S.Hersee and J. P. Duchemin, Annu. Rev. Mater. Sci. 12, 65 (1982).
8. DELLOW M W,BETON P H,HENINI M,et al, Gated Resonant Tunnelling Devices, Electronics Letters, 1991; 27(2):134-136
9. BONNEFOI A R, MCGILL T C, BURNHAM R D. Resonant Tunneling Transistors with Controllable Negative Differential Resistances, IEEE Electron Device Letters, 1985; 6(12):636-638
10. W.C.B.Peatman, E.R.Brown, M.J.Rooks,et al, Novel Resonant Tunneling Transistor with High Transconductance at Room Temperature, IEEE Electron Device Letters, 1994, 15(7):236-238
11. 郭维廉,牛萍娟,苗长云,共振隧穿器件及其集成技术发展趋势和最新进展,微纳电子技术,2005,7:298-305
12. 郭维廉,梁惠来,张世林,共振隧穿二极管,纳米电子与技术,2002,5:11-17
13. Wang Jianlin, Wang Liangchen, Zeng Yiping, Design and Realization of Resonant Tunneling Diodes with New Material Structure, 半导体学报,2004,26(1):1-5
14. Niu Pingjuan, Liu Hongwei, Guo Weilian, characteristics analysis of AlGaAs/GaAs resonant tunneling diode by device simulation, 纳米器件与技术,2004,10:15-19
15. 林弥,孙浙永,沈继忠,基于 RTD 的与非门和或非门设计,科技通报,2004,20(5):434-438
16. S.Luryi,frequency limit of double-barrier resonant tunneling oscillators, Appl.Phys.Lett.,47(5):490,1985.
17. M asahiroT .,HiroyukiS .eta l.,Jpn.J .Ap pl.Ph ys.,Vol.24 ,No .6, p .L4 66,19 85
18. M asahiroT ,HiroyukiS .eta l.,Jpn.J.Appl.Phys.,Vol.25 ,No .3, p. L4 66,1986 .
19. S en,S .,Capasso,F. eta l.,IEEE Electron D evice Lett,Vol.9, N o.8 , p.4 02 , 1988.
20. Stock Jürgen, Malindretos J?rg, Indlekofer Klaus Michael,et al, A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits, IEEE Transactions on Electron Devices, 2001;48(6):1028-1032
21. Hu Yanlong, Liang Huilai, Li Yihuan,Monolithically Fabricated OEICs Using RTD and MSM.半导体学报,2006,4(27):641-645
22. 李益欢,RTD/HEMT/MSM 光电集成研究,硕士论文
2. Chang L. L., Esaki L., Tsu R., Appl. Phys. Lett., 1974,24,593.
3. Scollner TCLG, Goodhue WD, Tannenwald DE, et al., Appl. Phys. Lett., 1983,43,588.
4. Alfred Cho, Molecular Beam Epitaxy (AIP, New York, 1994).
5. 谢孟贤,刘诺,化合物半导体材料与器件,成都:电子科技大学出版社,2000
6. P. D. Dapkus, Annu. Rev. Mater. Sci. 1982,12,243.
7. S.Hersee and J. P. Duchemin, Annu. Rev. Mater. Sci. 12, 65 (1982).
8. DELLOW M W,BETON P H,HENINI M,et al, Gated Resonant Tunnelling Devices, Electronics Letters, 1991; 27(2):134-136
9. BONNEFOI A R, MCGILL T C, BURNHAM R D. Resonant Tunneling Transistors with Controllable Negative Differential Resistances, IEEE Electron Device Letters, 1985; 6(12):636-638
10. W.C.B.Peatman, E.R.Brown, M.J.Rooks,et al, Novel Resonant Tunneling Transistor with High Transconductance at Room Temperature, IEEE Electron Device Letters, 1994, 15(7):236-238
11. 郭维廉,牛萍娟,苗长云,共振隧穿器件及其集成技术发展趋势和最新进展,微纳电子技术,2005,7:298-305
12. 郭维廉,梁惠来,张世林,共振隧穿二极管,纳米电子与技术,2002,5:11-17
13. Wang Jianlin, Wang Liangchen, Zeng Yiping, Design and Realization of Resonant Tunneling Diodes with New Material Structure, 半导体学报,2004,26(1):1-5
14. Niu Pingjuan, Liu Hongwei, Guo Weilian, characteristics analysis of AlGaAs/GaAs resonant tunneling diode by device simulation, 纳米器件与技术,2004,10:15-19
15. 林弥,孙浙永,沈继忠,基于 RTD 的与非门和或非门设计,科技通报,2004,20(5):434-438
16. S.Luryi,frequency limit of double-barrier resonant tunneling oscillators, Appl.Phys.Lett.,47(5):490,1985.
17. M asahiroT .,HiroyukiS .eta l.,Jpn.J .Ap pl.Ph ys.,Vol.24 ,No .6, p .L4 66,19 85
18. M asahiroT ,HiroyukiS .eta l.,Jpn.J.Appl.Phys.,Vol.25 ,No .3, p. L4 66,1986 .
19. S en,S .,Capasso,F. eta l.,IEEE Electron D evice Lett,Vol.9, N o.8 , p.4 02 , 1988.
20. Stock Jürgen, Malindretos J?rg, Indlekofer Klaus Michael,et al, A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits, IEEE Transactions on Electron Devices, 2001;48(6):1028-1032
21. Hu Yanlong, Liang Huilai, Li Yihuan,Monolithically Fabricated OEICs Using RTD and MSM.半导体学报,2006,4(27):641-645
22. 李益欢,RTD/HEMT/MSM 光电集成研究,硕士论文