共振隧穿器件结构与电路的研究
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摘要
共振隧穿二极管(Resonant Tunneling Diode)是基于量子隧穿现象的一种新型负阻器件,它具有响应速度快、工作频率高、工作电压低、功耗低以及功能多等许多令人瞩目的优点。在传统CMOS器件逐步趋近于尺寸限制之时,共振隧穿器件越来越显示出它的重要性。
天津大学电信学院新型半导体器件与集成技术研究小组是国内首家研制成功RTD单管的单位。在室温下,其RTD单管的电流峰谷比达到7.6,最高振荡频率达到54GHz。在此基础上,本课题组和国防重点实验室合作,也成功研制出了RTT(共振隧穿晶体管),其电流峰谷比PVCR最高达到47。
本文在介绍完超晶格的基本理论知识之后,详细分析和研究了共振隧穿二极管的工作原理,把RTD具有物理意义的电流—电压方程通过PSPICE的电压控制电流源建立起直流模型,并进一步探讨了影响RTD I-V特性的因素,从而加深了对共振隧穿器件的认识。另外针对传统的台面型RTD在结构以及工艺过程中的不足,提出了用新的自对准工艺制作新型平面结构的共振隧穿二极管,它不仅提升了器件的性能,而且能够做到与硅工艺的兼容。论文最后分析了基于共振隧穿器件的部分电路,这为研究和设计更为复杂的电路奠定了基础。
本篇论文从原理分析、结构设计、电路模拟等方面并结合测试结果对共振隧穿器件进行了全面而严谨的论述,为今后进一步开展对隧穿器件的研究和应用奠定了基础。
Resonant Tunneling Diode (RTD) is a new kind of negative resistance device based on the quantum tunneling phenomena. It has many advantages such as high responding speed, high working frequency, low power consumption, multi-function and so on. As the dimension of traditional CMOS device reaches its limit, resonant tunneling devices are displaying their significance more and more.
The team of new semiconductor device and integrating in Telecommunication College of Tianjin University have successfully fabricated the Resonant Tunneling Diode(RTD) in our country, whose peak-to-valley current ratio (PVCR) reaches 7.6 and its maximum oscillation frequency reaches 54GHz at room temperature. Additionally, we also have manufactured Resonant Tunneling Transistor (RTT) together with the National Defense Technology Point Laboratory, and the PVCR goes up to 47.
After introducing the basic theory of superlattice, the paper studies the operation principle and the design of RTD. The physics-based RTD current-voltage equation is adopted to establish the DC circuit model of the RTD by PSPICE software, What influences the current-voltage characters of RTD is discussed, which makes the reach on resonant tunneling device more convenient later.
To make up the shortage of mesa RTD, a new planar configuration is introduced, planar RTD is fabricated with the self-aligned process which is compatible with that of silicon on integrated circuits technology and it has been confirmed that RTD manufactured in this way can work well. At the end of this paper, some circuits consisted of resonant tunneling device is analyzed, which offers a good reference for the research on it in future.
In a word, this paper gives the whole dissertation on the device design, function analysis, circuit simulation and experiment data to the resonant tunneling device and lay the foundation of the future research on it.
天津大学电信学院新型半导体器件与集成技术研究小组是国内首家研制成功RTD单管的单位。在室温下,其RTD单管的电流峰谷比达到7.6,最高振荡频率达到54GHz。在此基础上,本课题组和国防重点实验室合作,也成功研制出了RTT(共振隧穿晶体管),其电流峰谷比PVCR最高达到47。
本文在介绍完超晶格的基本理论知识之后,详细分析和研究了共振隧穿二极管的工作原理,把RTD具有物理意义的电流—电压方程通过PSPICE的电压控制电流源建立起直流模型,并进一步探讨了影响RTD I-V特性的因素,从而加深了对共振隧穿器件的认识。另外针对传统的台面型RTD在结构以及工艺过程中的不足,提出了用新的自对准工艺制作新型平面结构的共振隧穿二极管,它不仅提升了器件的性能,而且能够做到与硅工艺的兼容。论文最后分析了基于共振隧穿器件的部分电路,这为研究和设计更为复杂的电路奠定了基础。
本篇论文从原理分析、结构设计、电路模拟等方面并结合测试结果对共振隧穿器件进行了全面而严谨的论述,为今后进一步开展对隧穿器件的研究和应用奠定了基础。
Resonant Tunneling Diode (RTD) is a new kind of negative resistance device based on the quantum tunneling phenomena. It has many advantages such as high responding speed, high working frequency, low power consumption, multi-function and so on. As the dimension of traditional CMOS device reaches its limit, resonant tunneling devices are displaying their significance more and more.
The team of new semiconductor device and integrating in Telecommunication College of Tianjin University have successfully fabricated the Resonant Tunneling Diode(RTD) in our country, whose peak-to-valley current ratio (PVCR) reaches 7.6 and its maximum oscillation frequency reaches 54GHz at room temperature. Additionally, we also have manufactured Resonant Tunneling Transistor (RTT) together with the National Defense Technology Point Laboratory, and the PVCR goes up to 47.
After introducing the basic theory of superlattice, the paper studies the operation principle and the design of RTD. The physics-based RTD current-voltage equation is adopted to establish the DC circuit model of the RTD by PSPICE software, What influences the current-voltage characters of RTD is discussed, which makes the reach on resonant tunneling device more convenient later.
To make up the shortage of mesa RTD, a new planar configuration is introduced, planar RTD is fabricated with the self-aligned process which is compatible with that of silicon on integrated circuits technology and it has been confirmed that RTD manufactured in this way can work well. At the end of this paper, some circuits consisted of resonant tunneling device is analyzed, which offers a good reference for the research on it in future.
In a word, this paper gives the whole dissertation on the device design, function analysis, circuit simulation and experiment data to the resonant tunneling device and lay the foundation of the future research on it.
引文
[1]孙建平,共振隧穿二极管研究进展,1999,19(2):123~125
[2]杜磊,庄奕琪,纳米电子学,北京:电子工业出版社,2004,191~194
[3]王建新,郑燕兰,用于n-p-n HBT的AlGaAs/GaAs多层MBE材料,半导体情报,1991,28(6):7~10
[4]Erik Lind,Peter Lindstr?m,Lars-Erik Wernersson,et al,Resonant Tunneling Permeable Base Transistors With High Transconductance,IEEE Electron Device Lett., 2004,25(10):678
[5]E.R.Brown,J.R.Soderstrom,Oscillations up to 712GHz in InAs/AlSb resonant tunneling diodes,Appl. Phys. Lett., 1991,58:2291
[6]D.H.Chow,J.N.Schulman,Investigation of InGaAs/AlAs resonant tunneling diodes for high speed switch,Appl. Phys. Lett.,61(14):1685~1992
[7]Kunihiro Arai,Hideaki Matsuzaki,IEEE Electron Device Letter,1997,18(11):544
[8]Chen K J,Niu G, Logic synthesis and circuit modeling of a programmable logic gate based on controlled queuching of series—connected negative differential resistance devices,IEEE Jour of Solid-State Circuits,2003,38(2):312~318
[9]SOLLNER T C L G,GOODHUE W D,TANNENWALD C D, Resonant tunneling through quantum wells at frequencies up to 2.5THz,Appl Phys Lett,1983,43:588
[10]MAZUMDER P,KULKARNI S,BHATTACHARYA M,Digital circuit application of resonant tunneling devices,Proceeding of the IEEE, 1998,86(4):664~686
[11]谢梦贤,刘诺,化合物半导体材料与器件,成都:电子科技大学出版社,2000,63~66
[12]刘恩科,朱秉升,罗晋生,半导体物理学,北京:国防工业出版社,1997,247~248
[13]时庆云,量子力学,北京:北京理工大学出版社,1993,113~116
[14]郭维廉,共振隧穿器件概述—共振隧穿器件讲座(1),微纳电子技术,2005,42(9):398~404
[15]J.N.Schuman,H.J.De Los Santos,IEEE Electron Device Letters,1996,17(5):220~222
[16]姚立真,通用电路模拟技术及软件应用,北京:电子工业出版社,1994,8~12
[17]高文焕,汪蕙,模拟电路的分析与设计—Pspice程序应用,北京:清华大学出版社,1998,7~35
[18]林弥,沈继忠,王林,基于开关序列的RTD多值反相器设计,浙江大学学报,2004,31(1):38~40
[19]Ching Sung Lee, Wei Chou Hsu, Jun Chin Huang, Monolithic AlAs-InGaAs-InGaP-GaAs HRT-FETS With PVCR of 960 at 300K, IEEE Electron Devices Letters,2005,26(2):50~52
[20]徐毓龙,纳米级隧道效应器件,电子产品世界,2001,53~54
[21]Christian Pacha,Uwe Auer,Christian Burwick,Threshold Logic Circuit Design Of Parallel Adders Using Resonant Tunneling Devices,IEEE Transactions on Very Large Sale Integration(VLSI) Systems,2000, 8(5):558~572
[22]Lippens D,Barbier E,Mounaix P,Fabrication of high-performance A1xGa1-xA/InyGa1-yAs/GaAs resonant tunneling diode using a microwave-compatible technology,IEEE Electron Device Letters,1991,12(3):114~116
[23]关旭东,硅集成电路工艺基础,北京:北京大学出版社,2003,183~212
[24]郭维廉,RTD的器件结构及制造工艺,微纳电子技术,2006,43(8):371
[25]C. L. Chen, R. H. Mathews, L. J. Mahoney, New Self-Aligned Planar resonant-Tunneling Diodes for Monolithic Circuits, IEEE Electron Device Letters,1997,18(10):489
[26]牛萍娟,郭维廉,梁惠来等,由RTD构成的MOBILE单元电路研究,微纳电子技术,2002,39(3):17
[27]宋瑞良,共振隧穿器件模拟及研制的研究,硕士学位论文,天津大学,2006
[28]J.I. Bergman,Chang J,RTD/CMOS Nanoelectronic Circuits:Thin-Flim InP-Based Resonant Tunneling Diodes Intetrated with CMOS Circuits,IEEE Electron Device Letters,1999,20(3):119~122
[29]J.Shen,S.Tehrani,H.Goronkin,An Exclusive-Nor Based on Resonant Interband Tunneling FET’s,IEEE Electron Device Letters,1996,17(3):94~95
[30]Eberl K,Duschl R,Schfidt OG,Si-Based Resonant Inter and Interband Tunneling Diodes,Journal of crystal Growth,2001,227~228;770~776
[31]Jin N,Chung SY,Rice AT,151kA/cm2 Peak Current Densities in Si/SiGe Resonant Interband Tunneling Diodes for High Power Mixed-signal Applicatiion ,App.Phys.Lett.,2003,83:3308~3333
[32]郭维廉,牛萍娟,苗长云,共振隧穿器件及其集成技术发展趋势和最新进展,微纳电子技术,2005,42(7): 298~304
[2]杜磊,庄奕琪,纳米电子学,北京:电子工业出版社,2004,191~194
[3]王建新,郑燕兰,用于n-p-n HBT的AlGaAs/GaAs多层MBE材料,半导体情报,1991,28(6):7~10
[4]Erik Lind,Peter Lindstr?m,Lars-Erik Wernersson,et al,Resonant Tunneling Permeable Base Transistors With High Transconductance,IEEE Electron Device Lett., 2004,25(10):678
[5]E.R.Brown,J.R.Soderstrom,Oscillations up to 712GHz in InAs/AlSb resonant tunneling diodes,Appl. Phys. Lett., 1991,58:2291
[6]D.H.Chow,J.N.Schulman,Investigation of InGaAs/AlAs resonant tunneling diodes for high speed switch,Appl. Phys. Lett.,61(14):1685~1992
[7]Kunihiro Arai,Hideaki Matsuzaki,IEEE Electron Device Letter,1997,18(11):544
[8]Chen K J,Niu G, Logic synthesis and circuit modeling of a programmable logic gate based on controlled queuching of series—connected negative differential resistance devices,IEEE Jour of Solid-State Circuits,2003,38(2):312~318
[9]SOLLNER T C L G,GOODHUE W D,TANNENWALD C D, Resonant tunneling through quantum wells at frequencies up to 2.5THz,Appl Phys Lett,1983,43:588
[10]MAZUMDER P,KULKARNI S,BHATTACHARYA M,Digital circuit application of resonant tunneling devices,Proceeding of the IEEE, 1998,86(4):664~686
[11]谢梦贤,刘诺,化合物半导体材料与器件,成都:电子科技大学出版社,2000,63~66
[12]刘恩科,朱秉升,罗晋生,半导体物理学,北京:国防工业出版社,1997,247~248
[13]时庆云,量子力学,北京:北京理工大学出版社,1993,113~116
[14]郭维廉,共振隧穿器件概述—共振隧穿器件讲座(1),微纳电子技术,2005,42(9):398~404
[15]J.N.Schuman,H.J.De Los Santos,IEEE Electron Device Letters,1996,17(5):220~222
[16]姚立真,通用电路模拟技术及软件应用,北京:电子工业出版社,1994,8~12
[17]高文焕,汪蕙,模拟电路的分析与设计—Pspice程序应用,北京:清华大学出版社,1998,7~35
[18]林弥,沈继忠,王林,基于开关序列的RTD多值反相器设计,浙江大学学报,2004,31(1):38~40
[19]Ching Sung Lee, Wei Chou Hsu, Jun Chin Huang, Monolithic AlAs-InGaAs-InGaP-GaAs HRT-FETS With PVCR of 960 at 300K, IEEE Electron Devices Letters,2005,26(2):50~52
[20]徐毓龙,纳米级隧道效应器件,电子产品世界,2001,53~54
[21]Christian Pacha,Uwe Auer,Christian Burwick,Threshold Logic Circuit Design Of Parallel Adders Using Resonant Tunneling Devices,IEEE Transactions on Very Large Sale Integration(VLSI) Systems,2000, 8(5):558~572
[22]Lippens D,Barbier E,Mounaix P,Fabrication of high-performance A1xGa1-xA/InyGa1-yAs/GaAs resonant tunneling diode using a microwave-compatible technology,IEEE Electron Device Letters,1991,12(3):114~116
[23]关旭东,硅集成电路工艺基础,北京:北京大学出版社,2003,183~212
[24]郭维廉,RTD的器件结构及制造工艺,微纳电子技术,2006,43(8):371
[25]C. L. Chen, R. H. Mathews, L. J. Mahoney, New Self-Aligned Planar resonant-Tunneling Diodes for Monolithic Circuits, IEEE Electron Device Letters,1997,18(10):489
[26]牛萍娟,郭维廉,梁惠来等,由RTD构成的MOBILE单元电路研究,微纳电子技术,2002,39(3):17
[27]宋瑞良,共振隧穿器件模拟及研制的研究,硕士学位论文,天津大学,2006
[28]J.I. Bergman,Chang J,RTD/CMOS Nanoelectronic Circuits:Thin-Flim InP-Based Resonant Tunneling Diodes Intetrated with CMOS Circuits,IEEE Electron Device Letters,1999,20(3):119~122
[29]J.Shen,S.Tehrani,H.Goronkin,An Exclusive-Nor Based on Resonant Interband Tunneling FET’s,IEEE Electron Device Letters,1996,17(3):94~95
[30]Eberl K,Duschl R,Schfidt OG,Si-Based Resonant Inter and Interband Tunneling Diodes,Journal of crystal Growth,2001,227~228;770~776
[31]Jin N,Chung SY,Rice AT,151kA/cm2 Peak Current Densities in Si/SiGe Resonant Interband Tunneling Diodes for High Power Mixed-signal Applicatiion ,App.Phys.Lett.,2003,83:3308~3333
[32]郭维廉,牛萍娟,苗长云,共振隧穿器件及其集成技术发展趋势和最新进展,微纳电子技术,2005,42(7): 298~304