金属氧化物薄膜晶体管器件的稳定性研究
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摘要
薄膜晶体管(Thin-Film Transistors，TFT)是场效应晶体管的一种，其制作方法是在衬底基板上沉积各种功能薄膜叠加而成，如绝缘层、半导体有源层及金属电极层。薄膜晶体管是液晶和有源矩阵有机发光二极管显示器的核心部件，其对显示器件的工作性能起到至关重要的作用。薄膜晶体管的背板技术中，非晶硅TFT迁移率较低，多晶硅TFT均匀性差及制备成本高，微晶硅TFT面临严峻工艺重复性难题，新兴有机材料TFT以其独特的有机物特性虽然展现了巨大潜力，但其迁移率及稳定性仍不尽理想。以上背板技术的缺点都限制TFT在显示器件中的应用。氧化物TFT背板技术是目前发现的最适合用于平板显示器件，但实用型的金属氧化物薄膜晶体管的发展依然遇到很多瓶颈。而唯有解决了这些技术瓶颈问题，TFT背板技术才能真正面向产业化。因此，有必要对氧化物TFT进行更深层次的研究和论证。本论文集中于氧化物薄膜晶体管器件的稳定性研究及其背板技术的开发，以器件稳定性为契机，从绝缘层、有源层及钝化层等功能薄膜材料以及相互界面之间的影响的角度出发，研究了器件稳定性与薄膜材料及其相互界面的关系，并从实用性角度致力于将氧化物TFT发展为背板技术的主流。
首先研究了阳极氧化铝基栅绝缘层的金属氧化物薄膜晶体管器件性能及器件稳定性。实验中对比以阳极氧化Al2O3及PECVD沉积SiO2为栅绝缘层IZO-TFTs的NBIS稳定性，Al2O3栅绝缘层的IZO-TFTs器件，其Von在NBIS测试下向正向漂移；SiO2栅绝缘层的TFT器件，其Von向负向漂移。负向的Von漂移归结于空穴捕获原理，而正向的Von漂移是由于栅极电子注入到栅绝缘层。本文提出三种改善NBIS稳定性的方法：其一，Al2O3与IZO间插入一层SiO2，双层绝缘层结构有助改善器件NBIS稳定性，同时此器件有优异PBIS稳定性；其二，制备双栅极结构金属氧化物薄膜晶体管，通过版图设计顶栅遮光单元，阻挡光照入射到TFT器件；其三，利用掺杂型阳极氧化铝能带修饰提高氧化物TFT的NBIS稳定性，目前工作还在进行。高稳定性的阳极氧化铝基栅绝缘层金属氧化物薄膜晶体管的研发成功，预示着其在平板显示领域将发挥巨大潜力。
而阳极氧化铝基双栅极结构的金属氧化物薄膜晶体管的成功开发，一方面有效地解决了器件NBIS稳定性，另一方面双栅极结构金属氧化物TFT能对器件阈值电压进行线性调控。研究表明，通过在一端栅极施加恒定电压，双栅极结构的TFT器件具有良好的阈值电压调控特性，这些可归结于底栅与顶栅间形成了交互作用的垂直电场。因而，双栅极结构IZO-TFTs器件也可应用于补偿像素电路，有效地改善OLED器件的亮度均匀性。从中看到，双栅极结构的TFT器件在将来的平板显示领域中展现了其不可或缺的作用。
强调有源层薄膜的退火处理对金属氧化物薄膜晶体管器件性能及器件稳定性的影响。文中采用两步退火法成功制备高性能金属氧化物薄膜晶体管。在ESL沉积前先对IZO薄膜在O2气氛下进行前退火处理，一方面改善TFT基板器件均匀性，另一方面TFT器件的PBS，NBIS及TS稳定性也明显提高，这是因为前退火能有效减少有源层体内或绝缘层/有源层界面的缺陷密度。通过计算FRs，薄膜经过前退火处理后缺陷态也明显减小。研究也发现，前退火条件中的退火温度及退火气氛均对TFT器件性能产生影响。
文中探讨了钝化层技术对金属氧化物薄膜晶体管器件性能及器件稳定性的影响。有机旋涂薄膜作为钝化层的IZO-TFTs器件，无法获得可控TFT性能；而通过PECVD沉积SiO2薄膜作为器件钝化层，器件性能及器件稳定性大幅提高。文中着重讨论不同温度沉积SiO2钝化层对TFT器件性能及器件稳定性的影响。SiO2沉积温度为210℃时，器件具有较佳器件性能，然而低温沉积SiO2作为器件钝化层，IZO-TFTs正栅偏压稳定性较差。通过XPS分析，SiO2沉积温度不仅影响IZO薄膜的氢含量，而且对IZO薄膜内氧空位及以弱键形式结合的氧杂质含量均存在影响。而弱键结合的氧杂质是影响IZO-TFTs器件正栅偏压稳定性的重要因素。再者，SiO2沉积过程是一个多因素相关而相互影响成膜过程，SiO2沉积功率、沉积压力及气体流量比均造成TFT器件性能差异。
基于金属氧化物TFT的背板技术已展示了其在平板显示领域中蓬勃发展的活力，开展和推进金属氧化物TFT基础性的研究工作，显得尤为重要而迫切。文中最后从新材料开发、器件可靠性、低成本、高分辨率及驱动芯片设计等角度引出氧化物TFT背板技术的下一步研究方向，寻找新型高性能氧化物TFT开发思路及发展方向。
Thin-Film Transistors (TFT), as a kind of field-effect transistors, are fabricated on thesubastrate with depositing variable functional film continuously, such as semiconductor active,dielectric, and metal electrodes. As a core component in liquid-crystal displays and organiclight-emitting diodes, the performance of TFT is of vial importance to the dislay quality. Thesupporting backplane technology for the TFT, recently, is diversified. In particular, it is a goodprospect to predict the metal oxide semiconductor could provide a solution to the intrinsicproblems including the inferior mobility of amorphous silicon TFTs, non-uniformity of lowtemperature poly-silicon, and bad processing-repeatability of micro-silicon. The rise oforganic TFT represents a potential direction, but the poor mobility and reliability stillbarricade its further development. However, like the other TFTs’ technologies before beingintegrated into commercial products, metal oxide TFTs also suffer from the materials’ intrinsiccapabilities and limiting factors, such as material fabrication and device stability. Nowadays,the investigation of metal oxide TFTs is all in the early stages, and the physical mechanismsare not yet clear. What is more, the restraint of the developing metal oxide TFTs intoutility-type is complicated and variable. From this viewpoint, it is urgent to deepen theunderstanding and argumentation of metal oxide TFTs when targeted as the mainstream ofbackplane technology. So in this doctoral dissertation, we focus on the developments ofhighly-stable metal oxide thin-films transistor and its backplane technology.
Firstly, we shed light on the device performance and stability of metal oxide TFTs basedon anodic aluminum oxide gate dielectrics. Via the comparison of the negative biasillumination stress (NBIS) stability of metal oxide TFTs based on PECVD-deposited SiO2andanodic Al2O3gate dielectric, it was proved that the negative Vonshift for SiO2-based TFTduring NBIS was due to the hole trapping phenomenon, and the positive Vonshift for anodicAl2O3-based TFT was due to the electron injection from gate to dielectric. Thus, threemethods have been proposed to enhance the stability of TFT with Al2O3gate dielectric:(1)insert a SiO2layer between Al2O3and IZO, the NBIS stability of IZO-TFTs was greatlyimproved, accompanying with a high stability under PBIS;(2) fabricate dual-gate structuremetal oxide TFTs, barricading the illumination lighting in to the IZO film via layout design oflight shielding unit by top gate;(3) modify the band structure of anodic Al2O3dielectric, usingthe doping effect of anodic Al2O3to improve the NBIS stability, and the work is on.Highly-stable metal oxide thin-films transistor based on anodic Al2O3dielectric has beensuccessfully fabricated, making a hint in the potential applications in LCDs and OLEDs.
Secondly, dual gate indium zinc oxide thin-film transistors have already provided a goodsolution to the NBIS stability, and from another point of view, dual structure TFTs have greatadvantages in threshold voltage modulation. It is shown that the threshold voltage of TFTscould been linearly modulated with respect to the applied top gate voltage due to themodification of vertical electric field distribution between the bottom and top gate. Owning toits linear controllability of threshold voltage, it is believed that the dual gate structure will betentatively introduced in the application of compensation pixel circuit, making an accessiblepath for developing highly-efficient AMOLEDs with TFT backplane, which has highimmunity to the threshold voltage variation.
Thirdly, highly-stable IZO-TFTs using a two-step-annealing method were fabricated. Itwas shown that the pre-annealing step before ESL deposition in O2atmosphere can greatlyimprove the uniformity of IZO-TFTs. Furthermore, the electrical stability against PBS, NBIS,and TS was greatly improved for TFTs with pre-annealing step, owing to the fewer trap statesat the gate insulator/channel interface or in the semiconductor film. The calculated FRsconfirmed that the pre-annealing step can reduce the trap states. In addition, annealingtemperature and ambient in the pre-annealing step make a great impact on the performance ofmetal oxide TFTs. Therefore, the pre-annealing step is essential and indispensable in oxideTFT fabrication.
Fourthly, we comprehensively study the effect of passivation technology on theperformance and stability of metal oxide TFTs. IZO-TFTs with spin-coating organic film aspassivation hardly show switchable TFT performance, but with SiO2deposited by PECVD aspassivation, the performance of IZO-TFTs has greatly improved. In this work, the influence ofthe deposition temperature of the SiO2passivation on the active layer was investigated. It isfound that the TFT passivated by210°C-SiO2has the lowest conductivity, lowest turn-onvoltage (|Von|), and highest mobility. However, the IZO-TFTs with SiO2deposited at lowertemperature are less stable under positive bias stress (PBS). By using X-ray PhotoelectronSpectroscopy (XPS) analysis, it is found that the deposition temperature of the SiO2passivation will influence on not only the hydrogen content, but also the amount of oxygenvacancies and loosely bound oxygen impurities in the bulk IZO film. The loosely boundoxygen impurities in IZO act as an acceptor-type trap owning to its lower migration barriersheight, resulting in positive Vonshift under PBS. Meanwhile, we have found that thedeposition of SiO2passivation is a multi-factors related and influenced process, such as thepower, gas pressure, and SiH4/N2O gas ratio will deeply affect the performance of IZO-TFTs.
TFT backplane technology based on metal oxide semiconductor has shown us a flourishing vitality in the application of flat panel displays, as a result, the fundamentalinvestigation of metal oxide TFTs is urgent and significant. At the end of this doctoraldissertation, we try to emphasize on the novel materials exploitation, device reliability, lowcost, high resolution, and driving IC design, which leads to the further research with thedesitination of highly-performance metal oxide thin-film transistors.
首先研究了阳极氧化铝基栅绝缘层的金属氧化物薄膜晶体管器件性能及器件稳定性。实验中对比以阳极氧化Al2O3及PECVD沉积SiO2为栅绝缘层IZO-TFTs的NBIS稳定性，Al2O3栅绝缘层的IZO-TFTs器件，其Von在NBIS测试下向正向漂移；SiO2栅绝缘层的TFT器件，其Von向负向漂移。负向的Von漂移归结于空穴捕获原理，而正向的Von漂移是由于栅极电子注入到栅绝缘层。本文提出三种改善NBIS稳定性的方法：其一，Al2O3与IZO间插入一层SiO2，双层绝缘层结构有助改善器件NBIS稳定性，同时此器件有优异PBIS稳定性；其二，制备双栅极结构金属氧化物薄膜晶体管，通过版图设计顶栅遮光单元，阻挡光照入射到TFT器件；其三，利用掺杂型阳极氧化铝能带修饰提高氧化物TFT的NBIS稳定性，目前工作还在进行。高稳定性的阳极氧化铝基栅绝缘层金属氧化物薄膜晶体管的研发成功，预示着其在平板显示领域将发挥巨大潜力。
而阳极氧化铝基双栅极结构的金属氧化物薄膜晶体管的成功开发，一方面有效地解决了器件NBIS稳定性，另一方面双栅极结构金属氧化物TFT能对器件阈值电压进行线性调控。研究表明，通过在一端栅极施加恒定电压，双栅极结构的TFT器件具有良好的阈值电压调控特性，这些可归结于底栅与顶栅间形成了交互作用的垂直电场。因而，双栅极结构IZO-TFTs器件也可应用于补偿像素电路，有效地改善OLED器件的亮度均匀性。从中看到，双栅极结构的TFT器件在将来的平板显示领域中展现了其不可或缺的作用。
强调有源层薄膜的退火处理对金属氧化物薄膜晶体管器件性能及器件稳定性的影响。文中采用两步退火法成功制备高性能金属氧化物薄膜晶体管。在ESL沉积前先对IZO薄膜在O2气氛下进行前退火处理，一方面改善TFT基板器件均匀性，另一方面TFT器件的PBS，NBIS及TS稳定性也明显提高，这是因为前退火能有效减少有源层体内或绝缘层/有源层界面的缺陷密度。通过计算FRs，薄膜经过前退火处理后缺陷态也明显减小。研究也发现，前退火条件中的退火温度及退火气氛均对TFT器件性能产生影响。
文中探讨了钝化层技术对金属氧化物薄膜晶体管器件性能及器件稳定性的影响。有机旋涂薄膜作为钝化层的IZO-TFTs器件，无法获得可控TFT性能；而通过PECVD沉积SiO2薄膜作为器件钝化层，器件性能及器件稳定性大幅提高。文中着重讨论不同温度沉积SiO2钝化层对TFT器件性能及器件稳定性的影响。SiO2沉积温度为210℃时，器件具有较佳器件性能，然而低温沉积SiO2作为器件钝化层，IZO-TFTs正栅偏压稳定性较差。通过XPS分析，SiO2沉积温度不仅影响IZO薄膜的氢含量，而且对IZO薄膜内氧空位及以弱键形式结合的氧杂质含量均存在影响。而弱键结合的氧杂质是影响IZO-TFTs器件正栅偏压稳定性的重要因素。再者，SiO2沉积过程是一个多因素相关而相互影响成膜过程，SiO2沉积功率、沉积压力及气体流量比均造成TFT器件性能差异。
基于金属氧化物TFT的背板技术已展示了其在平板显示领域中蓬勃发展的活力，开展和推进金属氧化物TFT基础性的研究工作，显得尤为重要而迫切。文中最后从新材料开发、器件可靠性、低成本、高分辨率及驱动芯片设计等角度引出氧化物TFT背板技术的下一步研究方向，寻找新型高性能氧化物TFT开发思路及发展方向。
Thin-Film Transistors (TFT), as a kind of field-effect transistors, are fabricated on thesubastrate with depositing variable functional film continuously, such as semiconductor active,dielectric, and metal electrodes. As a core component in liquid-crystal displays and organiclight-emitting diodes, the performance of TFT is of vial importance to the dislay quality. Thesupporting backplane technology for the TFT, recently, is diversified. In particular, it is a goodprospect to predict the metal oxide semiconductor could provide a solution to the intrinsicproblems including the inferior mobility of amorphous silicon TFTs, non-uniformity of lowtemperature poly-silicon, and bad processing-repeatability of micro-silicon. The rise oforganic TFT represents a potential direction, but the poor mobility and reliability stillbarricade its further development. However, like the other TFTs’ technologies before beingintegrated into commercial products, metal oxide TFTs also suffer from the materials’ intrinsiccapabilities and limiting factors, such as material fabrication and device stability. Nowadays,the investigation of metal oxide TFTs is all in the early stages, and the physical mechanismsare not yet clear. What is more, the restraint of the developing metal oxide TFTs intoutility-type is complicated and variable. From this viewpoint, it is urgent to deepen theunderstanding and argumentation of metal oxide TFTs when targeted as the mainstream ofbackplane technology. So in this doctoral dissertation, we focus on the developments ofhighly-stable metal oxide thin-films transistor and its backplane technology.
Firstly, we shed light on the device performance and stability of metal oxide TFTs basedon anodic aluminum oxide gate dielectrics. Via the comparison of the negative biasillumination stress (NBIS) stability of metal oxide TFTs based on PECVD-deposited SiO2andanodic Al2O3gate dielectric, it was proved that the negative Vonshift for SiO2-based TFTduring NBIS was due to the hole trapping phenomenon, and the positive Vonshift for anodicAl2O3-based TFT was due to the electron injection from gate to dielectric. Thus, threemethods have been proposed to enhance the stability of TFT with Al2O3gate dielectric:(1)insert a SiO2layer between Al2O3and IZO, the NBIS stability of IZO-TFTs was greatlyimproved, accompanying with a high stability under PBIS;(2) fabricate dual-gate structuremetal oxide TFTs, barricading the illumination lighting in to the IZO film via layout design oflight shielding unit by top gate;(3) modify the band structure of anodic Al2O3dielectric, usingthe doping effect of anodic Al2O3to improve the NBIS stability, and the work is on.Highly-stable metal oxide thin-films transistor based on anodic Al2O3dielectric has beensuccessfully fabricated, making a hint in the potential applications in LCDs and OLEDs.
Secondly, dual gate indium zinc oxide thin-film transistors have already provided a goodsolution to the NBIS stability, and from another point of view, dual structure TFTs have greatadvantages in threshold voltage modulation. It is shown that the threshold voltage of TFTscould been linearly modulated with respect to the applied top gate voltage due to themodification of vertical electric field distribution between the bottom and top gate. Owning toits linear controllability of threshold voltage, it is believed that the dual gate structure will betentatively introduced in the application of compensation pixel circuit, making an accessiblepath for developing highly-efficient AMOLEDs with TFT backplane, which has highimmunity to the threshold voltage variation.
Thirdly, highly-stable IZO-TFTs using a two-step-annealing method were fabricated. Itwas shown that the pre-annealing step before ESL deposition in O2atmosphere can greatlyimprove the uniformity of IZO-TFTs. Furthermore, the electrical stability against PBS, NBIS,and TS was greatly improved for TFTs with pre-annealing step, owing to the fewer trap statesat the gate insulator/channel interface or in the semiconductor film. The calculated FRsconfirmed that the pre-annealing step can reduce the trap states. In addition, annealingtemperature and ambient in the pre-annealing step make a great impact on the performance ofmetal oxide TFTs. Therefore, the pre-annealing step is essential and indispensable in oxideTFT fabrication.
Fourthly, we comprehensively study the effect of passivation technology on theperformance and stability of metal oxide TFTs. IZO-TFTs with spin-coating organic film aspassivation hardly show switchable TFT performance, but with SiO2deposited by PECVD aspassivation, the performance of IZO-TFTs has greatly improved. In this work, the influence ofthe deposition temperature of the SiO2passivation on the active layer was investigated. It isfound that the TFT passivated by210°C-SiO2has the lowest conductivity, lowest turn-onvoltage (|Von|), and highest mobility. However, the IZO-TFTs with SiO2deposited at lowertemperature are less stable under positive bias stress (PBS). By using X-ray PhotoelectronSpectroscopy (XPS) analysis, it is found that the deposition temperature of the SiO2passivation will influence on not only the hydrogen content, but also the amount of oxygenvacancies and loosely bound oxygen impurities in the bulk IZO film. The loosely boundoxygen impurities in IZO act as an acceptor-type trap owning to its lower migration barriersheight, resulting in positive Vonshift under PBS. Meanwhile, we have found that thedeposition of SiO2passivation is a multi-factors related and influenced process, such as thepower, gas pressure, and SiH4/N2O gas ratio will deeply affect the performance of IZO-TFTs.
TFT backplane technology based on metal oxide semiconductor has shown us a flourishing vitality in the application of flat panel displays, as a result, the fundamentalinvestigation of metal oxide TFTs is urgent and significant. At the end of this doctoraldissertation, we try to emphasize on the novel materials exploitation, device reliability, lowcost, high resolution, and driving IC design, which leads to the further research with thedesitination of highly-performance metal oxide thin-film transistors.
引文
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