10纳米以下图形电子束曝光的研究
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摘要
电子束曝光是目前分辨率最高、使用最灵活的纳米加工技术,在纳米电子学、纳米光学、纳机械系统等领域具有广泛的应用。同时,随着集成电路的关键尺寸进入到22 nm节点,电子束曝光技术在整个半导体制造领域扮演着越来越重要的角色。
追求更高的分辨率是电子束曝光研究的核心内容。本论文从电子束曝光的基本原理出发测量了不同电压的点扩散函数并进行了蒙特卡洛模拟研究,为研究电子束曝光的分辨率极限与邻近效应校正提供了基础。进而分析了电子束曝光的分辨率、效率、结构均匀度之间的关系以及它在大规模应用中所面临的困难,提出了解决困难的可行办法。
本论文对高分辨电子束曝光的工艺和分辨极限开展了研究,得到了9 nm周期宽度的纳米结构。进一步利用透射电子显微镜和原子力显微镜对电子束曝光制作的纳米结构进行了精确测量,发现曝光的分辨率极限对稀疏的结构可以达到4nm的特征尺寸,而对于密集型结构,16 nm周期宽度的结构无法完全分辨。通过对电子束扩散函数与显影对比度的分析,本文认为电子束曝光的分辨极限与显影液在纳米尺度下的扩散限制有关。
电子束曝光虽然具有极高的分辨率,但它面临在纳米尺度下图形转移的困难。本文为此提出了利用电子束曝光和辐照直接制作功能纳米结构。以超细PMMA纳米纤维作为前驱物,在高分辨透射电子显微镜下原位地研究了聚合物在电子束辐照下分解、碳化和石墨化的过程,分别制作出石墨烯纳米带、类富勒烯以及石墨尖等纳米结构。利用电子束过量曝光PMMA结合退火过程得到了图形化的石墨纳米结构。
高分辨电子束曝光同时面临效率低、邻近效应、辐照损伤的困难。为了克服这些困难,本文发展了一种毛细力自组装方法,可控地将电子束曝光定义的高深宽比纳米结构组装成复杂的平面结构或者三维结构从而提高电子束曝光的效率、减少邻近效应和消除辐照损伤。
本论文通过对10 nm以下电子束曝光的基础研究,不仅解决了高分辨电子束曝光中的几个关键问题,而且推动了国内外电子束曝光的发展,并对高分辨电子束曝光的应用具有极大的指导意义。
High-resolution electron-beam lithography has many applications in nanoelectronics, nanophotonics, and nanoelectromechanical systems. As ultra-large-scale integration circuits is approaching to 22 nm technology node and beyond, electron-beam lithography plays a more and more important role in semiconductor manufacturing. Approaching higher resolution is the critical issue for electron-beam lithography.
In this dissertation, we measured point-spread function experimentally and did Monte-Carlo simulation for different-voltage exposures, which can be used to study the resolution limits and correct the proximity effect of electron-beam lithography. We analyzed the trade-off between resolution, efficiency, and structure uniformity. Furthermore, we discussed the difficulties of ultra-high-resolution electron-beam lithography for applications and proposed possible ways to solve them.
With optimized exposure and development processes,9-nm-pitch hydrogen silsesquioxane (HSQ) nanostructures were fabricated. By using high-resolution transmission electron microscopy and atomic force microscopy, we found that 4 nm structures could be readily fabricated in sparse patterns but 16-nm-pitch structures was difficult to yield in dense structures. By analyzing the spread function and development contrast curve, we hypothesized that the resolution limit of electron-beam lithography is primarily limited by developer-diffusion.
One of difficulties of high-resolution electron-beam lithography is pattern transferability. We proposed to fabricate functional nanostructures directly by electron-beam lithography and irradiation. By using ultrathin electrospun PMMA nanofibers as the precursor, we studied the decomposition, carbonization, and graphitization processes of a polymer by in situ high-resolution transmission electron microscopy and fabricated graphene nanoribbons, fullerene-like nanostructures, and graphitic nanotips. By using this method, patterned graphitic nanostructures were fabricated by electron-beam lithography combined with thermal treatment.
To overcome low efficiency, proximity effect, and irradiation damage of electron-beam lithography, we developed a new self-assembly method based on capillary-force-induced cohesion and collapse. With this method, sparse high-aspect-ratio nanostructures were self-assembled into complex networks or three-dimensional structures to improve the efficiency, decrease the proximity effect, and avoid irradiation damage of electron-beam lithography.
The research in this dissertation solved several critical issues for high-resolution electron-beam lithography, which will have many applications in developing nanodevices.
追求更高的分辨率是电子束曝光研究的核心内容。本论文从电子束曝光的基本原理出发测量了不同电压的点扩散函数并进行了蒙特卡洛模拟研究,为研究电子束曝光的分辨率极限与邻近效应校正提供了基础。进而分析了电子束曝光的分辨率、效率、结构均匀度之间的关系以及它在大规模应用中所面临的困难,提出了解决困难的可行办法。
本论文对高分辨电子束曝光的工艺和分辨极限开展了研究,得到了9 nm周期宽度的纳米结构。进一步利用透射电子显微镜和原子力显微镜对电子束曝光制作的纳米结构进行了精确测量,发现曝光的分辨率极限对稀疏的结构可以达到4nm的特征尺寸,而对于密集型结构,16 nm周期宽度的结构无法完全分辨。通过对电子束扩散函数与显影对比度的分析,本文认为电子束曝光的分辨极限与显影液在纳米尺度下的扩散限制有关。
电子束曝光虽然具有极高的分辨率,但它面临在纳米尺度下图形转移的困难。本文为此提出了利用电子束曝光和辐照直接制作功能纳米结构。以超细PMMA纳米纤维作为前驱物,在高分辨透射电子显微镜下原位地研究了聚合物在电子束辐照下分解、碳化和石墨化的过程,分别制作出石墨烯纳米带、类富勒烯以及石墨尖等纳米结构。利用电子束过量曝光PMMA结合退火过程得到了图形化的石墨纳米结构。
高分辨电子束曝光同时面临效率低、邻近效应、辐照损伤的困难。为了克服这些困难,本文发展了一种毛细力自组装方法,可控地将电子束曝光定义的高深宽比纳米结构组装成复杂的平面结构或者三维结构从而提高电子束曝光的效率、减少邻近效应和消除辐照损伤。
本论文通过对10 nm以下电子束曝光的基础研究,不仅解决了高分辨电子束曝光中的几个关键问题,而且推动了国内外电子束曝光的发展,并对高分辨电子束曝光的应用具有极大的指导意义。
High-resolution electron-beam lithography has many applications in nanoelectronics, nanophotonics, and nanoelectromechanical systems. As ultra-large-scale integration circuits is approaching to 22 nm technology node and beyond, electron-beam lithography plays a more and more important role in semiconductor manufacturing. Approaching higher resolution is the critical issue for electron-beam lithography.
In this dissertation, we measured point-spread function experimentally and did Monte-Carlo simulation for different-voltage exposures, which can be used to study the resolution limits and correct the proximity effect of electron-beam lithography. We analyzed the trade-off between resolution, efficiency, and structure uniformity. Furthermore, we discussed the difficulties of ultra-high-resolution electron-beam lithography for applications and proposed possible ways to solve them.
With optimized exposure and development processes,9-nm-pitch hydrogen silsesquioxane (HSQ) nanostructures were fabricated. By using high-resolution transmission electron microscopy and atomic force microscopy, we found that 4 nm structures could be readily fabricated in sparse patterns but 16-nm-pitch structures was difficult to yield in dense structures. By analyzing the spread function and development contrast curve, we hypothesized that the resolution limit of electron-beam lithography is primarily limited by developer-diffusion.
One of difficulties of high-resolution electron-beam lithography is pattern transferability. We proposed to fabricate functional nanostructures directly by electron-beam lithography and irradiation. By using ultrathin electrospun PMMA nanofibers as the precursor, we studied the decomposition, carbonization, and graphitization processes of a polymer by in situ high-resolution transmission electron microscopy and fabricated graphene nanoribbons, fullerene-like nanostructures, and graphitic nanotips. By using this method, patterned graphitic nanostructures were fabricated by electron-beam lithography combined with thermal treatment.
To overcome low efficiency, proximity effect, and irradiation damage of electron-beam lithography, we developed a new self-assembly method based on capillary-force-induced cohesion and collapse. With this method, sparse high-aspect-ratio nanostructures were self-assembled into complex networks or three-dimensional structures to improve the efficiency, decrease the proximity effect, and avoid irradiation damage of electron-beam lithography.
The research in this dissertation solved several critical issues for high-resolution electron-beam lithography, which will have many applications in developing nanodevices.
引文
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