IV-VI族半导体外延生长及其特性研究
|
摘要
以PbSe和PbTe为代表的Ⅳ-Ⅵ族窄带隙半导体材料具有一些独特的物理性质,如能带结构高度对称、重空穴带缺失,直接带隙位于布里渊区的L对称点、且具有正的温度系数关系等；Ⅳ-Ⅵ族半导体还具有俄歇复合率低的特点,比相似带隙的Ⅲ-Ⅴ族半导体低1-2个数量级。这些特性使得Ⅳ-Ⅵ族半导体成为制备中红外光电子器件的重要材料之一,并被应用到环境检测、有毒气体分析、医学诊断和国防等领域,因此研究Ⅳ-Ⅵ族窄带隙半导体材料的生长和物理特性具有重要的意义。本论文开展了Ⅳ-Ⅵ族半导体低维结构和PbTe/CdZnTe新型异质体系的分子束外延生长及其物理特性的研究工作,在BaF2(111)单晶衬底、CdZnTe(111)单晶衬底上实现了PbTe薄膜的外延生长,并在此基础上研究了PbSe量子点的生长机理。利用原子力显微镜(AFM)、高分辨X射线衍射(HRXRD)、X射线光电子能谱(XPS)以及光致发光谱(PL)等表征手段研究了PbTe薄膜、PbSe量子点以及PbTe/CdZnTe异质界面等的微结构和光电特性。取得的主要结果如下：
(1)在BaF2(111)衬底上外延得到了单原子层平整表面的PbTe薄膜。通过比较不同生长温度、Te/PbTe束流比的PbTe薄膜的晶体质量和表面形貌,发现增大Te/PbTe束流比(Gr≥0.33)可以有效的改善表面形貌,得到单原子层平整的表面。同时,升高生长温度,可以有效的改善晶体质量,减少位错密度和缺陷。在不同温度下观察到了PbTe薄膜的中红外光致发光。
(2)在单原子层平整的PbTe薄膜上,用分子束外延方法自组装(self-assembled)生长了PbSe量子点。通过观察不同沉积速率下的PbSe量子点生长,得到了PbSe量子点形状和分布特征,发现PbSe应力各向异性是影响量子点形状和分布的主要因素。此外在单原子层平整的PbTe薄膜上,通过电子束曝光、刻蚀,成功制备了脊背式和二维平面式PbTe薄膜微结构模板。
(3)用分子束外延方法在Ⅱ-Ⅵ族Cd0.96Zn0.04Te (111)衬底上成功生长了PbTe单晶薄膜,通过比较不同生长温度、不同冷却速率下PbTe/Cd0.96Zn0.04Te薄膜的表面形貌和晶体质量,发现PbTe/Cd0.96Zn0.04Te薄膜的表面形貌主要由滑移台阶线和螺旋台阶面构成,缓慢的冷却过程可以提高PbTe/Cd0.96Zn0.04Te薄膜晶体质量。这与PbTe／和Cd0.96Zn0.04Te之间的热失配驰豫有关。实验发现在PbTe/Cd0.96Zn0.04Te界面上两种材料的(200)晶面发生了70.6。角度旋转。
(4)利用X射线光电子谱(XPS),测量得到了PbTe/CdTe异质结的价带带阶为0.135±0.05 eV,同时,根据PbTe和CdTe的带隙,计算得到PbTe/CdTe导带带阶为1145±0.05eV。分析了PbTe/CdTe界面的应力、极化电荷对带阶测量的影响和PbTe/CdTe异质结带阶遵循“共阴离子”定律的原因。实验测量结果符合理论预言的带阶值。
(5)研究了PbSe薄膜中声子散射对空穴迁移率的影响。通过对PbSe材料的光学波极性散射、杂质散射、声学波形变散射、声学波压电散射、光学波非极性散射的迁移率理论计算,结果表明在77-295K温度范围,PbSe的长纵光学波极性散射是影响载流子迁移率的主要散射机理。
IV-VI group semiconductors (such as PbTe, PbSe) are in possession of interesting intrinsic physical natures:They have symmetric band structures with narrow direct band gaps at the L point in the Brillouin zone, positive temperature coefficients of the band gaps ((dE8)/(dT)>0). The absence of the heavy hole band and low non-radiative Auger recombination rates which are more than one order of magnitude lower in comparison withⅢ-ⅤandⅡ-Ⅵmaterials, are other unique properties. These characteristics make them as promising materials for the development of mid-infrared optoelectronic devices that could be utilized in atmospheric pollution monitoring, toxic gas analysis systems, and human breath analysis in medical diagnostics and military. Therefore, the study on the epitaxial growth and the physical properties ofⅣ-Ⅵsemiconductor is of great importance. In the thesis, we have studied the growth of new PbTe/CdZnTe heterostructures and low dimensional structures as well as their optical and electrical properties. Molecular beam epitaxy (MBE) has been used for the growth of PbTe layers and PbSe quantum dots on the BaF2(111) substrates. In addition the PbTe/CdZnTe heterostructures have also been grown by MBE. The characterization of these materials were performed by atomic force microscopy (AFM), high resolution x-ray diffraction (HRXRD), high resolution transmission electron microscopy (HRTEM), x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL). The micro-structural and optoelectronic properties of the MBE grown PbSe quantum dots and PbTe/CdZnTe heterostructures were characterized by above technologies. The main conclusions are as follows:
(1) Growth spirals with monolayer steps on PbTe surface are obtained by optimization of the growth parameters, such as using high Te/PbTe beam flux ratio (Gr≥0.33). It is found that the crystal qualities of PbTe grown on BaF2 substrates are improved and the defect densities are reduced as the growth temperatures increased from the 375°to 525°. The mid-infrared photoluminescence of PbTe/BaF2(111) were observed at different temperatures.
(2) The self-assembled PbSe quantum dots were grown on the PbTe(111) buffer layer surfaces by molecular beam epitaxy. The shapes and sizes of PbSe quantum dots as a function of PbSe coverage were characterized using atomic force microscopy. It suggests that the high elastic anisotropy in the PbSe is main factor to impact the size and distribution of PbSe quantum dots. In addition, the stripe and two dimensional square PbTe templates were fabricated by electron beam lithography and wetting etching on the epitaxial PbTe layer.
(3) Successful epitaxial growth of PbTe/Cd0.96Zn0.04Te (111) heterostructure using molecular beam epitaxy is described. The thermal misfit strain relaxation in epitaxial PbTe grown on Cd0.96Zn0.04Te (111) substrate has been studied by consideration on the effects of the growth temperature and the cooling rate. It is shown that the surface is dominated by terraces with triangular shape and anomalous spiral steps, which originate from the thermal misfit relaxation. Post-growth treatment with a slower cooling rate improves the crystalline quality of PbTe grown on Cdo.96Zn0.04Te (111). We found that the lattice fringes of the (200) plane in the PbTe rotated of 70.6°with respect to the (200) plane of Cd0.96Zn0.04Te at the interface.
(4) The PbTe/CdTe (111) heterostructures were synthesized through molecular beam epitaxy and x-ray photoelectron spectroscopy has been used to measure the valence band offset at the PbTe/CdTe (111) heterostructure interface. A type-Ⅰband alignment with a valence band offset ofΔEv= 0.135±0.05 eV and conduction band offset ofΔEC=1.145 eV±0.05 eV is concluded. The piezoelectric field and band bending effects on the experimental results have been taken into consideration. Within the experimental error the directly obtained valence band offset is in agreement with theoretical prediction by the inclusion of spin-orbit interaction. In addition the origin of the nearly zero valence band offset in the PbTe/CdTe (111) heterostructure is analyzed.
(5) Non-intentionally doped PbSe crystalline films were grown on insulating BaF2(111) by molecular beam epitaxy. Five scattering mechanisms limiting hole mobilities were theoretically analyzed, i.e. polar optical modes scattering, impurity scattering, acoustic mode scattering, piezoelectric acoustic modes scattering and non-polar optical modes scattering. The calculations show that in the temperatures between 77 and 295 K the scattering of polar optical phonon modes dominate the impact on the observed hole mobility in the epitaxial PbSe films.
(1)在BaF2(111)衬底上外延得到了单原子层平整表面的PbTe薄膜。通过比较不同生长温度、Te/PbTe束流比的PbTe薄膜的晶体质量和表面形貌,发现增大Te/PbTe束流比(Gr≥0.33)可以有效的改善表面形貌,得到单原子层平整的表面。同时,升高生长温度,可以有效的改善晶体质量,减少位错密度和缺陷。在不同温度下观察到了PbTe薄膜的中红外光致发光。
(2)在单原子层平整的PbTe薄膜上,用分子束外延方法自组装(self-assembled)生长了PbSe量子点。通过观察不同沉积速率下的PbSe量子点生长,得到了PbSe量子点形状和分布特征,发现PbSe应力各向异性是影响量子点形状和分布的主要因素。此外在单原子层平整的PbTe薄膜上,通过电子束曝光、刻蚀,成功制备了脊背式和二维平面式PbTe薄膜微结构模板。
(3)用分子束外延方法在Ⅱ-Ⅵ族Cd0.96Zn0.04Te (111)衬底上成功生长了PbTe单晶薄膜,通过比较不同生长温度、不同冷却速率下PbTe/Cd0.96Zn0.04Te薄膜的表面形貌和晶体质量,发现PbTe/Cd0.96Zn0.04Te薄膜的表面形貌主要由滑移台阶线和螺旋台阶面构成,缓慢的冷却过程可以提高PbTe/Cd0.96Zn0.04Te薄膜晶体质量。这与PbTe／和Cd0.96Zn0.04Te之间的热失配驰豫有关。实验发现在PbTe/Cd0.96Zn0.04Te界面上两种材料的(200)晶面发生了70.6。角度旋转。
(4)利用X射线光电子谱(XPS),测量得到了PbTe/CdTe异质结的价带带阶为0.135±0.05 eV,同时,根据PbTe和CdTe的带隙,计算得到PbTe/CdTe导带带阶为1145±0.05eV。分析了PbTe/CdTe界面的应力、极化电荷对带阶测量的影响和PbTe/CdTe异质结带阶遵循“共阴离子”定律的原因。实验测量结果符合理论预言的带阶值。
(5)研究了PbSe薄膜中声子散射对空穴迁移率的影响。通过对PbSe材料的光学波极性散射、杂质散射、声学波形变散射、声学波压电散射、光学波非极性散射的迁移率理论计算,结果表明在77-295K温度范围,PbSe的长纵光学波极性散射是影响载流子迁移率的主要散射机理。
IV-VI group semiconductors (such as PbTe, PbSe) are in possession of interesting intrinsic physical natures:They have symmetric band structures with narrow direct band gaps at the L point in the Brillouin zone, positive temperature coefficients of the band gaps ((dE8)/(dT)>0). The absence of the heavy hole band and low non-radiative Auger recombination rates which are more than one order of magnitude lower in comparison withⅢ-ⅤandⅡ-Ⅵmaterials, are other unique properties. These characteristics make them as promising materials for the development of mid-infrared optoelectronic devices that could be utilized in atmospheric pollution monitoring, toxic gas analysis systems, and human breath analysis in medical diagnostics and military. Therefore, the study on the epitaxial growth and the physical properties ofⅣ-Ⅵsemiconductor is of great importance. In the thesis, we have studied the growth of new PbTe/CdZnTe heterostructures and low dimensional structures as well as their optical and electrical properties. Molecular beam epitaxy (MBE) has been used for the growth of PbTe layers and PbSe quantum dots on the BaF2(111) substrates. In addition the PbTe/CdZnTe heterostructures have also been grown by MBE. The characterization of these materials were performed by atomic force microscopy (AFM), high resolution x-ray diffraction (HRXRD), high resolution transmission electron microscopy (HRTEM), x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL). The micro-structural and optoelectronic properties of the MBE grown PbSe quantum dots and PbTe/CdZnTe heterostructures were characterized by above technologies. The main conclusions are as follows:
(1) Growth spirals with monolayer steps on PbTe surface are obtained by optimization of the growth parameters, such as using high Te/PbTe beam flux ratio (Gr≥0.33). It is found that the crystal qualities of PbTe grown on BaF2 substrates are improved and the defect densities are reduced as the growth temperatures increased from the 375°to 525°. The mid-infrared photoluminescence of PbTe/BaF2(111) were observed at different temperatures.
(2) The self-assembled PbSe quantum dots were grown on the PbTe(111) buffer layer surfaces by molecular beam epitaxy. The shapes and sizes of PbSe quantum dots as a function of PbSe coverage were characterized using atomic force microscopy. It suggests that the high elastic anisotropy in the PbSe is main factor to impact the size and distribution of PbSe quantum dots. In addition, the stripe and two dimensional square PbTe templates were fabricated by electron beam lithography and wetting etching on the epitaxial PbTe layer.
(3) Successful epitaxial growth of PbTe/Cd0.96Zn0.04Te (111) heterostructure using molecular beam epitaxy is described. The thermal misfit strain relaxation in epitaxial PbTe grown on Cd0.96Zn0.04Te (111) substrate has been studied by consideration on the effects of the growth temperature and the cooling rate. It is shown that the surface is dominated by terraces with triangular shape and anomalous spiral steps, which originate from the thermal misfit relaxation. Post-growth treatment with a slower cooling rate improves the crystalline quality of PbTe grown on Cdo.96Zn0.04Te (111). We found that the lattice fringes of the (200) plane in the PbTe rotated of 70.6°with respect to the (200) plane of Cd0.96Zn0.04Te at the interface.
(4) The PbTe/CdTe (111) heterostructures were synthesized through molecular beam epitaxy and x-ray photoelectron spectroscopy has been used to measure the valence band offset at the PbTe/CdTe (111) heterostructure interface. A type-Ⅰband alignment with a valence band offset ofΔEv= 0.135±0.05 eV and conduction band offset ofΔEC=1.145 eV±0.05 eV is concluded. The piezoelectric field and band bending effects on the experimental results have been taken into consideration. Within the experimental error the directly obtained valence band offset is in agreement with theoretical prediction by the inclusion of spin-orbit interaction. In addition the origin of the nearly zero valence band offset in the PbTe/CdTe (111) heterostructure is analyzed.
(5) Non-intentionally doped PbSe crystalline films were grown on insulating BaF2(111) by molecular beam epitaxy. Five scattering mechanisms limiting hole mobilities were theoretically analyzed, i.e. polar optical modes scattering, impurity scattering, acoustic mode scattering, piezoelectric acoustic modes scattering and non-polar optical modes scattering. The calculations show that in the temperatures between 77 and 295 K the scattering of polar optical phonon modes dominate the impact on the observed hole mobility in the epitaxial PbSe films.
引文
[1]Ohno H,Young D K,Beschoten B,et.al.1999 Nature 402,790
[2]Ohno H,Chiba D,Matsukura F,et.al.2000 Nature 408,944
[3]Koichi.Okamoto,Isamu.Niki,Alexander.Shvartser,Yukio.Narukawa,TakashiM ukai,Axel Scherer 2004 Nature materials 3,601
[4]D.Kupidura,M.C.Rogge,M.Reinwald,W.Wegscheider,R.J.Haug2006 Phys. Rev. Lett 96,046802
[5]Y.Qiu,D.Uul.2004 Appl. Phys. Lett 84,1510
[6]R. Klann, T. Hofer, R. Buhleier and J. W. Tomm,1995 J. Appl. Phys.77,277
[7]P.C.Findlay, C. R. Pidgeon, R. Kotitschke, et.al.1998 Phys. Rev. B,58,12908
[8]H. Preier,1979 Appl. Phys.20,189
[9]R. J. Cushman,1959 Proceedings of IRE 47,1471
[10]红外探测器,1976上海科学技术情报研究所,上海
[11]朱惜辰,程进,2001光电探测与器件,10,30
[12]J.F.Butler,A.R.Calawa, R.J.Phelan, Jr.T.C.Harman, A.J.Strauss, R. H. Rediker, Appl. Phys. Lett.,5,75
[13]B.Spanger, U. Schiessl, A. Lambrecht, H. Bottner,M. Tacke,1988 Appl. Phys. Lett.,53,2582
[14]A. Rogalski,2003 Progress in quantum electronics,27,59
[15]M. Arnold, D. Zimin, K. Alchalabi,H. Zogg,2005 J. Cryst. Growth,278,739
[16]F. Felder, M.Arnold, M.Rahim,C.Ebneter,H.Zogg,2007 Appl. Phys. Lett.91, 1011021
[17]H. Zogg, K. Alchalabi,D. S. Zimin,2003 Proc. SPIE,4820,429
[18]GLucovsky,R.M.White 1973 Phys. Rev. B 8,660
[19]R.B.Shalvoy,G.B.Fisher,P.Y.Siles 1977 Phys. Rev. B 15,1680
[20]W.Cochran,R.A.Cowley,G.Dolling,M.M.Elcombe 1966 Proc.Roy.Soc.A 293, 433
[21]A.D.B.Woods,W.Cochran.B.N.Brockhouse 1960 Phys.Rev.119,980
[22]K.S.Upadhyaya,M.Yadav.G.K.Upadhyaya 2002 Phys.stat.sol(b) 229,1129
[23]A. I. Belogorokhov, L. I. Belogorokhova, and D. R. Khokhlov et al 2002 Semiconductors.36,663
[24]M.N.Romcevic, Z.V.Popovic and D.R.Khokhlov,1995 J. Phys.:Condens. Matter.7,5105
[25]Romcevic, N. Romcevic, D. R. Khokhlov, and I I Ivanchik,2000 J. Phys.: Condens. Matter.12,8737
[26]Wu H Z, Cao C F, Si J X, Xu T N, Zhang H J, Wu H F, Chen J, Shen W Z, Dai N,2007 J. Appl. Phy,101,1035051
[27]J. Chen and W. Z. Shen,2006 J. Appl. Phy,99,013513
[28]J. O. Dimmock and G. B. Wright,1964 Phys. Rev.135, A821
[29]D. L. Mitchell and R. F. Wallis,1966 Phys. Rev.151,581
[30]G. Martinez, M. Schluter and M. L. Cohen,1975 Phys. Rev. B11,651
[31]P.J.Lin,L.Kleinman 1969 Phys.Rev 180,823
[32]B.A.Volkov,O.A.Pankratov,A.V.Sazonov 1982 Sov.Phys.Semicond 16,1112
[33]R. Dalven, in solid state physics, edited by H. Ehreinrich, F. Seitz and D. Turnbull 197 3 (Academic,New York), V 28,179
[34]N. Suzuki, K. Sawai and S. Adachi,1995 J. Appl. Phys.77,1249-
[35]N. Suzuki and S. Adachi,1994 Jpn. J. Appl. Phys.33,193
[36]J.R.Burke,G.P.Carver 1978 Phys. Rev. B 17,2719
[37]R.S.Algaoer 1961 J. Appl. Phys 32, suppl 2185
[38]C.J.Vineis,T.C.Harman,S.D.Calawa,M.P.Walsh,R.E.Reeder,R.Singh,A.Shakur i 2008 Phys. Rev. B 77,235202
[39]J.F.Butler et.al.1968 Appl. Phys. Lett 12,347
[40]L.Wayne,1976 J. Appl. Phys 47,217
[41]A.J.Elleman,H.Wolma 1948 Proc.Phys.Soc.London 61,164
[42]H.Holloway,E.M.Logothetis,E.Wilkes 1970 J. Appl. Phys 41,3543
[43]A.Lopez-Otero,L.D.Haas,W.Jantsch.K.Lischka,1976 Appl.Phys.Lett.28,546
[44]L. R. Tomasetta and C. G. Fonstad,1974 Appl. Phys. Lett.,24,567
[45]U. P. SchieBl and J. Rohr 1999 Infrared Phys. Technol.,40,325
[46]M.GAstles,M.L.Yong 1981 J.Electron.Mat.10,1
[47]P.J.McCann,C.GFonstad 1991 J.Electron.Mat 20,915
[48]L.R.Tomasetti,C.G.Fonstad 1974 Appl. Phys. Lett 25,567
[49]C.C.Wang,S.R.Hampton 1975 Solid State Electron 18,111
[50]A.Ishida,M.Aoki,H.Fujiyasu 1985 J. Appl. Phys 58,797
[51]J.Oswald,B.Tranta,M.Pippan,GBauer 1990 J.Opt.Quant.Electron 22,243
[52]A. Ishida, H. Takashiba, T. Izutu, H. FUjiyasu and H. Bottner 1994 J. Appl. Phys.,75,619
[53]A.Lopez-Otero 1977 J. Appl. Phys 48,446
[54]D.L.Partin,C.M.Thrush,S.J.Simko,S.W.Gaarenstroom1989J.Appl.Phys 66,6115
[55]G.Springholz,G.Bauer 2007 phys.stat.sol (b) 244,2752
[56]G.Springholz,G.Bauer 1994 J. Appl. Phys77,540
[57]Dmitri V.Talapin,Christopher B.Murray 2005 Science 7,86
[58]Hua Tong,Ying Jie Zhu,Li Xia Yang,Liang Li,Ling Zhang 2006 Angwe.Chem.Int.Ed.45,7739
[59]Melissa Fardy,Allon I.Hochbaum,Joshua Goldberger,Minjuan M.Zhang, Pei dong Yang 2007 Adv.Mater 19,3047
[60]S.H.Wei and Alex Zunger 1997 Phys.Rew.B55,13605
[61]R. Leitsmann and F.Bechstedt,2007 Phys.Rev.B 76,125315
[62]Shu Yuan,Norbert Frank,G.Bauer 1994 Phys.Rev.B 50,5286
[63]W.Z.Shen,K.Wang,L.F.Jiang,X..G.Wang,S.C.Shen,H.Z.Wu,P.J.McCann 2001 Appl. Phys. Lett79,2579
[64]F.F.Sizov,J.V.Gumenjuk-Sichevskaya,V.V.Tetyorkin,V.V.Zabudsky 1995 Acta Physica Pol.A87,441
[65]T.K.Chu,D.Agassi,A.Martinez 1987 Appl. Phys. Lett 50,419
[1]GBinnig,C.F.Quate,1986 Phys.Rev.Lett 56,930
[2]Manne S.et al.1991 J.Vac.Technol.B 9,950
[3]Bustarnante C,et al 1992 Biacherniscry 31,22
[4]Z. G Piosker.1978 Dynamical Scattering of X-ray in Crystals, Springer, Berlin,219
[5]A. Segmuller,1986 Adv. X-ray Anal,29,353
[6]S. J. Miles et al.1988Mater. Letter.7,239
[7]I. C. Bassagnana, C. C. Tann,1989J. Appl. Cryst.22,269
[8]B. K. Tanner, M. A. G. Halliwell,1988 Semicond. Sci. Technol,3,967
[9]M. A. G. Halliwell et al,1989 Semicond. Sci. Technol.4,10
[10]S.N.G.Chu et al.1985J.Appl.Phys,57,249
[11]H.Kim,Y.Kim et al.1988J. Crystal Growth,92,507
[12]P.F. Fcwster.1988 J. Appl. Cryst,21,324
[13]刘文西,黄孝瑛,陈玉如.1989材料结构电子显微分析.天津：天津大学出版社
[14]V.Sanders,1977 Appl.Optics 16,19
[15]O.Arnon,P.W.Baumeister.1978 Appl.Optics 17,2913
[16]王文柱,1988干涉光谱仪,北京,航空出版社
【17】 沈学础,2002半导体光谱与光学性质,科学出版社
[1]H.Holloway, D.K.Hohnke, R.L.Crawley, E.Wikes 1970 J.Vac.Sci.Technol.7, 586
[2]H.Holloway, E.M.Logothetis, E.Wikes 1970 J.Appl.Phys 41,3543
[3]E.M.Logothetis, H.Holloway, A.J.Varga, E.Wikes 1971 Appl. Phys. Lett.19, 318
[4]A.Lambrecht, N.Herres, B.Spanger, S.Kuhn, H.Bottner, M.Tacke 1991 J.Crystal Growth 108,301
[5]M.Rahim, M.Arnold, F.Felder, K.Behfar, H.Zogg 2007 Appl. Phys. Lett.91 151102
[6]A.Lopez-Otero,1978 Thin Solid Films 39,3
[7]G.Springholz, G.Bauer, G.Ihnigner 1993 J.Crystal Growth 127,302
[8]J.C.Snyman, G.Gouws, R.J.Muller 1984 J.Crystal Growth 70,373
[9]J.Fuchs, Z.Feit, H.Preier 1988 Appl. Phys. Lett 53,894
[10]G.Springholz, A.Y Ueta, N. Frank G.Bauer 1996 Appl. Phys. Lett 69,2824
[11]G.Springholz, G.Bauer 1992 Appl. Phys. Lett 60,1600
[12]C.L.Stecker, W.E.Moddeman, J.T.Grant 1981 J.Appl.Phys 52,6921
[13]D.L.Partin 1983 J.Vac.Sci.Technol B 1,174
[14]G. Springholz, V. Holy, M. Pinczolits, G. Bauer 1998 Science282,734.
[15]杨玉琨,杨易,赵斌,吴连民,姜亦忠,刘岩峰1992《发光学报》13,249
[16]P.Pongratz, H.Sitter 1987 J.Crystal Growth 80,73
[17]G.Springholz, G.Bauer, V.Holy 1996 Phys.Rev.B 54,4500
[18]Wu, H. F, Zhang, H. J, Lu, Y. H, Xu, T. N, Si, J. X, Li, H. Y, Bao, S. N., Wu, H. Z, He, P 2006 J.Crystal Growth 294,179
[19]J.P.Liu, Y.T.Wang, H.Yang, D.S.Jiang, U.Jahn, K.H.Ploog 2004 Appl. Phys. Lett 84,5449
[20]Yong Chang, C.R.Becker, C.H.Grein et.al.2008 J.Electronic Materials 37,1171
[21]G.Springholz, G.Bauer 1995 J.Appl.Phys 77,540
[22]W.K.Burton, N.Cabrera,F.C.Frank 1950 Proc.R.Soc.A 243,299
[23]T.N. Xu, H.Z. Wu, J.X Si,2007 Appl.Sur.Sci 253,5457
[24]H.Krenn, E.Koppensteiner, A.Holzinger, A.Voitichek, GBauer, H.Clemens 1992 J.Appl.Phys 72,97
[25]G.Springholz, GBauer 2007 Phys.stat.sol(b) 8,2752
[26]L.S.Palatnik,1983 Structure and Physical Properties of Solids, Vishaya Shkola,Kiev,p.264
[27]J.Stangl, V.Holy, GBauer 2004 Rev.Mod.Phys 76,725
[28]J.Tersoff, F.K.Legoues 1994 Phys.Rev.Lett 72,3570
[29]Dmitri V.Talapin,Christopher B.Murray,2003Scince310,86
[30]Goldstein L, Glas F, Marzin J Y, Charasse M N, LeRoux G 1985 Appl. Phys. Lett.47,1099.
[31]Eaglesham J, Cerullo M 1990 Phys. Rev. Lett.64,1943
[32]M. Pinczolits, GSpringholz, GBauer 1998 Appl. Phys. Lett 73,250
[33]GSpringholz, K.Wiesauer 2002 Phys.Rev.Lett 88,015507
[34]Alchalabi K, Zimin D, Kostorz G, Zogg H 2003 Phys. Rev. Lett 90,026104
[35]A.Raab, GSpringholz 2000 Appl. Phys. Lett 77,2991
[36]Zhenyang Zhong, A.Halilovic,T.Fromherz,F.Schaffler,G.Bauer 2003 Appl. Phys. Lett 82,4776
[37]Y.D.Wang, K.Y.Zang,S.J.Chua,C.G.Fonstad 2006 Appl. Phys. Lett 89, 241922
[38]Yang B,V.K.Tewary 2003 Phys.Rev.B 68,035301
[39]Zhenyang Zhong, A.Halilovic,M.Muhlbeger,F.Schffler,G.Bauer 2003 J.Appl.Phys 93,6258
[40]Hao Hu,H.J Gao, Feng Liu 2008 Phys. Rev. Lett 101,216102
[41]Z.Zhong,O.G.Schmidt,G.Bauer 2005Appl. Phys. Lett 87,133111
[42]T.U.Schulli,G.Vastola,M.I.Richard,A.Malachias,G.Renaud,F.Uhlik,F.Montale nti,GChen,L.Miglio,F.Schaffler,GBauer 2009 Phys. Rev. Lett 102,025502
[43]L.A.Elizondo,Y.Li,A.Sow,R.Kamana,H.Z.Wu,S.Mukherjee,F.Zhao,Z.Shi,P.J. McCann 2007 J.Appl.Phys 101,104505
[44]W.Goltsos,J,Nakahara,A.V.Nurmikko,D.L.Partin 1985 Appl. Phys. Lett 46,1173
[45]I.I.Zasavitskii,E.V.Bushuev,E.A.Andrada-e-Silva,E.Abramof 2002 JETP Letters 75,559
[46]W.W.Anderson,1977 IEEE Quan Elec 13,532
[47]H.Preier et.al 1979 Appl.Phys 20,189
[48]P. J. McCann, K. Namjou,X. M. Fang,1999Appl. Phys. Lett.75,3608
[49]T. Schwarzl, E. Kaufmann, G. Springholz, K. Koike, T. Hotei, M. Yano, W. Heiss 2008 Phys.Rev.B 78,165320
[50]R.Espiau de Lamaestre,H.Bernas,D.Pacifici,G.Franzo,F.Priolo 2006 Appl. Phys. Lett.88,181115
[51]Mitsuaki Yano,Isao Makabe,Kazuto Koike 2004 Physica E 20,449
[52]F.Zhao,X.Lv,A.Majumdar,Z.Shi 2004 Appl. Phys. Lett.84,1251
[1]W.Huber and A.Lopez-otero 1979Thin Solid Films 58,21
[2]Wakio.Uchida, Helmut Sitter,Klaus Lischka,Helmut Heinrich1989 Thin Solid Films 171,271
[3]R.Sporken, S.Sivananthan,K.K.Ma Havadi,G.Monfroy, M.Boukerche, J.P.Faurie 1989 Appl. Phys. Lett.55,1879
[4]Kazuto Koike, Takayoshi Tanaka,Shuwei Li, Mitsuaki Yano 2001 Journal of Crystal Growth,227-228,671
[5]Heiss W, Grosiss H, Kaufmann E,et al.2006 Appl. Phys. Lett.88,192109
[6]R. Leitsmann, F.Bechstedt,2007 Phys.Rev.B 76,125315
[7]Z.Dashevsky, A.Belenchuk,E.Gartstein, O.Shapoval 2004Thin solid films 461,256
[8]A.Dauscher,M.Dinescu,O.M:Boffoue,A.Jacquot, B.Lenoir 2006 Thin solid films 497,170
[9]Springholz G, Ueta A Y, Frank N, et al.1998 Appl. Phys. Lett.69,2822
[10]X.M.Fang,K.Namjou,I Na Chao,P.J.Mccann 2000 J.Vac.Sci.Technol B 18,1720
[11]M.Pinczolits,G.Springholz,G.Bauer 1998 Appl. Phys. Lett.73,250
[12]P.Muller,A.Fach.J.John,A.N.Tiwari,H.Zogg, GKostorz1996 J.Appl.Phys 79,1911
[13]Zogg H 2003 IEEE Transactions On Electron Devices 50,209
[14]K.Kellermann,D.Zimin,K.Alchalbi,N.A.Pikhtin,H.Zogg 2003 IEE Proc.-Optoelectron 150,337
[15]H. Z. Wu, X. M. Fang, R. Salas et al 1999 J. Vac. Sci.& Tech B 17,1263
[16]Xiaohong Li, Iris S.Nandhakumar 2008 Electrochemistry communications 10,263
[17]J.Yoshino,H.Munekata,L.L.Chang1987 J.Vac.Sci.Technol B 5,683
[18]Toshinori Takagi, Hiroshi Takaoika,Youichi Kuriyama 1985Thin Solid Films 126,149
[19]J.Sadowski,M.A.Herman 1995 Journal of Crystal Growth 146,449
[20]K.T.Pollard,A.Erbil,R.Sudharsanan,S.Perkowitz 1992 J Appl.Phys 71,6136
[21]Kazuto Koike,Takayoshi Honden,Isao Makabe, et.al2003. Journal of Crystal Growth 257,212
[22]Antoni Rogalski 2003 Progress in Quantum electronics 27,59
[23]Yukun Yang, Haiyong Chen, Dongmei Li, Dequan Yuan,BingZheng,San Yu, Guangtian Zou 2003 Infrared Physics & Technology 44,299
[24]Bo Zhang,J.He, Terry M.Tritt 2006Appl. Phys. Lett.,88,043119
[25]Taleb Mokari, Minjuan Zhang,Peidong Yang 2007 J.Am.Chem.Soc 129,9864
[26]Springholz G, Frank N,Bauer G 1995 Thin solid films 267,15
[27]Zogg H, Maissen C, Blunier S, et al.1993,Semicond. Sci.Technol.8,S337
[28]Matthews J W 1970 Thin solid films 5,187
[29]Hannon J B, Shenoy V B, Schwarz K W.2006 Science 313,1266
[30]Springholz G, 1997Appl.Sur.Sci.112,12
[31]J.X.Si, H.Z.Wu, T.N.Xu, C.F.Cao, Z.C.Huang,2005Chin.Phys.Lett.22,2353
[32]Lisa Sugiura 1996 J Appl.Phys 81,1633
[33]Yong Chang, C.R.Becker, C.H.Grein et.al. T2008 J.Electronic. Materials 37,1171
[34]Shiv Kumar, A.K. Kapoor, A. Nagpal, S. Sharma, D. Verma, A. Kumar, R. Raman, P.K. Basu,2006J.Crystal Growth 297,311
[35]P.Muller,H.Zogg,A.Fack,J.John,C.Paglino,A.N.Tiwari,M.Krejci 1996 Physical Review Letters78,3007
[36]Springholz G, Bauer G.1995 J Appl.Phys 77,540
[37]T.N. Xu, H.Z. Wu, J.X Si,2007 Appl.Sur.Sci 253,5457
[38]Dimitrios Maroudas,Luis A,Zepeda-Ruiz,W.Henry Weinberg1998 Appl. Phys. Lett 73,753
[39]Dodson B W, Tsao J Y 1987 Appl. Phys. Lett.51,1325
[40]Frank F C, Read W T 1950 Phys. Rev 79,722
[41]Sugiura L 1997 Appl. Phys. Lett.70,1317
[42]R. Leitsmann, F.Bechstedt,2006 Phys.Rev.B 74,085309
[43]杨顺华.1998.《晶体位错理论基础》,(第一卷).北京：科学出版社,第68页、第394页
[44]X.J. Wang, C. Fulk,F.H. Zhao, D.H. Li, S. Mukherjee et.al.2008 Journal. Electronic materials 37,1200
[451 Springholz G, Bauer G.2007 Phys.stat.sol.(b) 244,2752
[46]Manifacier J C, Gasiot J, Fillard J P 1976 J. Phys. E.9,1002
[47]Chen N B,Wu H Z,Xu T N 2005 J. Appl. Phys.97,023515
[48]RobertS.Allgaier 1958 Physical Review 111,1029
[49]E.I.Rogacheva,O.N.Nashchekina,A. V.Merits,S.GLyubchenko 2005 Appl. Phys. Lett.86,063103
[50]G.Grabecki,J.Wrobel, T.Dietl 1999 Phys.Rev.B 60,R5133
[51]A.Almaggossi, A.Abounadi,S.Charar,T.Maurice, G.Breton 2007 Phys.Stat.Sol(a) 204,3496
[52]Matsushita, Y, Bluhm, H, Geballe, T.H, Fisher, I.R,2005. Physical Review Letters,94,157002
[53]Kh Shuichi Murakami,Naoto Nagaosa,,Shou-Cheng Zhang.2004 Physical Review Letters,93,156804
[54]Salameh Ahmad, Kang Hoang, S.D.Mahanti 2006 Physical Review Letters, 96,056403
[55]Kang Hoang, S.D.Mahanti, Puru Jena 2007 Phys.Rev.B 76,115432
[56]A.Almaggossi, A.Abounadi,S.Charar,T.Maurice,R.Viennois,A.Errebbahi and GBreton 2002 Phys.Stat.Sol(a) 191,217
[57]Joseph P.Heremans, Vladimir Jovoic,EricS.Toberer et.al.2008 Science 321,554
[58]Cao Chunfang,Wu Huizhen,Si Jianxiao.et al.2006 Acta Physica Sinica, 55,2021
[1]W. Heiss, H. Groiss, E. Kaufmann, G. Hesser,M. Boberl, G. Springholz and F. Schaffler,2006 Appl. Phys. Lett.88,192109
[2]H. Groiss, E. Kaufmann, G. Springholz, T. Schwarzl, G. Hesser, F. Schaffler, W. Heiss, K. Koike, T. Itakura, T. Hotei, M. Yano andT. Wojtowicz,2007 Appl. Phys. Lett 91,222106
[3]R. Leitsmann and F.Bechstedt,2007 Phys.Rev.B 76,125315
[4]Tinaning Xu, Huizhen Wu, and Jianxiao Si,2007 Phys. Rev. B 76,155328
[5]J.X.Si, H.Z.Wu, T.N.Xu, M L Xia,Q L Wang, W Z Fang, N Dai 2008 Semicond. Sci.Technol.23,125021
[6]Jian-xiao Si, Huizhen Wu,Tianning Xu, Minglong, Xia 2008 Journal Inorganic Materials 23,545
[7]R. Leitsmann,L.E.Ramou and F.Bechstedt,2006 Phys.Rev.B 74,085309
[8]T. Schwarzl, E. Kaufmann, G. Springholz, K. Koike, T. Hotei, M. Yano and W. Heiss 2008 Phys.Rev.B 78,165320
[9]M. Yano, I. Makabe and K. Koike 2004 Physica E 20,449
[10]P. D. C. King, T. D. Veal, P. H. Jefferson and C. F. Mcconville,2007 Appl.Phys.Lett.90,132105
[11]E. A. Kraut, R. W. Grant, J. R. Waldrop and S. P. Kowalczyk,1980 Phys. Rev. Lett.44,1620
[12]E. A. Kraut, R. W. Grant, J. R. Waldrop and S. P. Kowalczyk,1983 Phys.Rev.B 28,1965
[13]Haifei Wu, Hanjie Zhang, Yunhao Lu, Jianxiao Si, H.Y. Li, S.N. Bao, Huizhen Wu, Pimu He,2008 Appl. Phys. Lett,92,122112
[14]F. R. McFeely, S. Kowalczyk, L. Ley, R. A. Pollak and D. A. Shirly,1973 Phys.Rev.B 15,5228
[15]T. M. Duc, C. Hsu and J. P. Faurie,1987 Phys.Rev.Lett.58,1127
[16]S. P. Kowalczyk, J. T. Cheung, E. A. Kraut and R. W. Grant,1986 Phys. Rev. Lett.56,1605
[17]A. Waag, Y. S. Wu, R. N. Bicknell-Tassius, C. Gonser-Buntrock and G Landwehr,1990 J. Appl. Phys.68,212.
[18]G. Brtina, L. Sorba, A. Antonini,G. Ceccone, R.Nicolini, G.Biasiol, A.Franciosi, J.E.Angelo and W.W.Gerberich,1993Phys. Rew. B 48,8899
[19]G.Martin, A.Botchkarev, A.Rockett, H.Morkoc 1996 Appl. Phys. Lett,68, 2541
[20]Chunglin Wu, Hongmao Lee, Chengtai Kuo, Shangjr Gwo and Chiahung Hsu 2007 Appl. Phys. Lett,91,042112
[21]T. E. Cook, Jr., C. C. Fulton, W. J. Mecouch, K. M. Tracy, R. F. Davis, E. H. Hurt, G. Lucovsky, and R. J. Nemanich,2003J. Appl. Phys.93,3995
[22]F. Cerrina, R.R. Daniels, V. Fano,1983 Appl. Phys. Lett.43,182
[23]S. H. Wei and Alex Zunger,1988 Phys. Rev. B 37,8959
[24]S.H.Wei and Alex Zunger 1997 Phys.Rew.B55,13605
[25]S. Yuan, H. Krenn, G. Springholz, and G. Bauer,1993Phys. Rev. B 47,7213
[1]HugoE Romero, Marija Drndic,2005. Physical Review Letters,95,156801
[2]Matsushita. Y, Bluhm. H, Geball. T.H, Fisher. I.R,2005. Physical Review Letters,94,157002
[3]Shi Z, Lv X, Zhao F, Majumdar A, Ray D, Singh R, Yan XJ,2004. Appl.Phys.Lett,85,2999
[4]Robert S.Allgaier, WayneW.Scanlon,1958. Physical Review,111,1029
[5]Zogg.H, Huppi.M,1985. App.Phys.Lett,47,133
[6]Cao C F, Wu H Z, Si J X, Xu T N, Chen,J, Shen,WZ,2006. Acta Physica Sinica.55,2021
[7]Si J X,Wu H Z,Xu T N,Cao C F,Huang Z C,2005. Chin.Phys.Lett.,22:,2352
[8]Springholz.G, Ueta.A.Y, Fran.N,Bauer.G,1996. Appl.Phys.Lett,69,2822
[9]Xu T N, Wu H Z, Si J X, Cao C F,2006 Appl Surf Science,253,5457
[10]Lee T D, Low F E, Pines D,1952. Physical Review,90,297
[11]Yang. A.L, Wu. H.Z, Li Z.F, Qiu.D.J, Chang.Y, Li.J.F, McCann.P.J, Fang.X.F,1999. Chin.Phys.Let,17,606
[12]Chattopad hyay D, Queisser. H. J,1981. Reviews of Modern Physics, 53,745
[13]Hohnke.D.K, Kaiser.S.W,1974. J.Appl.Phys,45,892
[14]Wu H Z, Dai N, McCann, P.J,2002. Phys. Rev. B,66,045303:Zasavitskii I I, Andrada. E. A. De,2004. Phys.Rev.B,70,115302
[15]Martinez G., Schluter M,1974. Phys.Rev.B 11,651
[16]Tetyorkin.V.V, Sipatov.A.Yu, Sizov.F.F, Fedorenko.A.I, Fedorov.A,1996. Infrared Physics & Technology37,379
[17]Dashevsky.Z, Belenchuk.A, Gartstein.E, Shapoval,2004. Thin solid films,46,256
[18]Bardeen.J, Shockley.W,1950. Physical Review,80,72
[19]Aven.M, Segall.B,1963. Physical Review,130,81
[20]Don Berlincourt, Hans Jaffr.,1962. Physical Review,129,1009
[21]Dalemarius Brown, Ralph Bray,1962. Physical Review,127,1593
[22]Chen.J, Shen.WZ,2006. J.Appl.Phys,99,013513
[23]Sergey V Ovsyannikov, Vladimir V Shchennikov,Yuri S Ponosov, Svetlana V Gudina, Vera G Guk,Eugenii P Skipetrov and Viktor E Mogilenskikh,2004. Journal of Physics D-Applied Physics 37,1151
[24]Upadhyaya K S,Yadav M,Upadhyaya G K,2002.Phys.stat.sol.(b)229,1129
[2]Ohno H,Chiba D,Matsukura F,et.al.2000 Nature 408,944
[3]Koichi.Okamoto,Isamu.Niki,Alexander.Shvartser,Yukio.Narukawa,TakashiM ukai,Axel Scherer 2004 Nature materials 3,601
[4]D.Kupidura,M.C.Rogge,M.Reinwald,W.Wegscheider,R.J.Haug2006 Phys. Rev. Lett 96,046802
[5]Y.Qiu,D.Uul.2004 Appl. Phys. Lett 84,1510
[6]R. Klann, T. Hofer, R. Buhleier and J. W. Tomm,1995 J. Appl. Phys.77,277
[7]P.C.Findlay, C. R. Pidgeon, R. Kotitschke, et.al.1998 Phys. Rev. B,58,12908
[8]H. Preier,1979 Appl. Phys.20,189
[9]R. J. Cushman,1959 Proceedings of IRE 47,1471
[10]红外探测器,1976上海科学技术情报研究所,上海
[11]朱惜辰,程进,2001光电探测与器件,10,30
[12]J.F.Butler,A.R.Calawa, R.J.Phelan, Jr.T.C.Harman, A.J.Strauss, R. H. Rediker, Appl. Phys. Lett.,5,75
[13]B.Spanger, U. Schiessl, A. Lambrecht, H. Bottner,M. Tacke,1988 Appl. Phys. Lett.,53,2582
[14]A. Rogalski,2003 Progress in quantum electronics,27,59
[15]M. Arnold, D. Zimin, K. Alchalabi,H. Zogg,2005 J. Cryst. Growth,278,739
[16]F. Felder, M.Arnold, M.Rahim,C.Ebneter,H.Zogg,2007 Appl. Phys. Lett.91, 1011021
[17]H. Zogg, K. Alchalabi,D. S. Zimin,2003 Proc. SPIE,4820,429
[18]GLucovsky,R.M.White 1973 Phys. Rev. B 8,660
[19]R.B.Shalvoy,G.B.Fisher,P.Y.Siles 1977 Phys. Rev. B 15,1680
[20]W.Cochran,R.A.Cowley,G.Dolling,M.M.Elcombe 1966 Proc.Roy.Soc.A 293, 433
[21]A.D.B.Woods,W.Cochran.B.N.Brockhouse 1960 Phys.Rev.119,980
[22]K.S.Upadhyaya,M.Yadav.G.K.Upadhyaya 2002 Phys.stat.sol(b) 229,1129
[23]A. I. Belogorokhov, L. I. Belogorokhova, and D. R. Khokhlov et al 2002 Semiconductors.36,663
[24]M.N.Romcevic, Z.V.Popovic and D.R.Khokhlov,1995 J. Phys.:Condens. Matter.7,5105
[25]Romcevic, N. Romcevic, D. R. Khokhlov, and I I Ivanchik,2000 J. Phys.: Condens. Matter.12,8737
[26]Wu H Z, Cao C F, Si J X, Xu T N, Zhang H J, Wu H F, Chen J, Shen W Z, Dai N,2007 J. Appl. Phy,101,1035051
[27]J. Chen and W. Z. Shen,2006 J. Appl. Phy,99,013513
[28]J. O. Dimmock and G. B. Wright,1964 Phys. Rev.135, A821
[29]D. L. Mitchell and R. F. Wallis,1966 Phys. Rev.151,581
[30]G. Martinez, M. Schluter and M. L. Cohen,1975 Phys. Rev. B11,651
[31]P.J.Lin,L.Kleinman 1969 Phys.Rev 180,823
[32]B.A.Volkov,O.A.Pankratov,A.V.Sazonov 1982 Sov.Phys.Semicond 16,1112
[33]R. Dalven, in solid state physics, edited by H. Ehreinrich, F. Seitz and D. Turnbull 197 3 (Academic,New York), V 28,179
[34]N. Suzuki, K. Sawai and S. Adachi,1995 J. Appl. Phys.77,1249-
[35]N. Suzuki and S. Adachi,1994 Jpn. J. Appl. Phys.33,193
[36]J.R.Burke,G.P.Carver 1978 Phys. Rev. B 17,2719
[37]R.S.Algaoer 1961 J. Appl. Phys 32, suppl 2185
[38]C.J.Vineis,T.C.Harman,S.D.Calawa,M.P.Walsh,R.E.Reeder,R.Singh,A.Shakur i 2008 Phys. Rev. B 77,235202
[39]J.F.Butler et.al.1968 Appl. Phys. Lett 12,347
[40]L.Wayne,1976 J. Appl. Phys 47,217
[41]A.J.Elleman,H.Wolma 1948 Proc.Phys.Soc.London 61,164
[42]H.Holloway,E.M.Logothetis,E.Wilkes 1970 J. Appl. Phys 41,3543
[43]A.Lopez-Otero,L.D.Haas,W.Jantsch.K.Lischka,1976 Appl.Phys.Lett.28,546
[44]L. R. Tomasetta and C. G. Fonstad,1974 Appl. Phys. Lett.,24,567
[45]U. P. SchieBl and J. Rohr 1999 Infrared Phys. Technol.,40,325
[46]M.GAstles,M.L.Yong 1981 J.Electron.Mat.10,1
[47]P.J.McCann,C.GFonstad 1991 J.Electron.Mat 20,915
[48]L.R.Tomasetti,C.G.Fonstad 1974 Appl. Phys. Lett 25,567
[49]C.C.Wang,S.R.Hampton 1975 Solid State Electron 18,111
[50]A.Ishida,M.Aoki,H.Fujiyasu 1985 J. Appl. Phys 58,797
[51]J.Oswald,B.Tranta,M.Pippan,GBauer 1990 J.Opt.Quant.Electron 22,243
[52]A. Ishida, H. Takashiba, T. Izutu, H. FUjiyasu and H. Bottner 1994 J. Appl. Phys.,75,619
[53]A.Lopez-Otero 1977 J. Appl. Phys 48,446
[54]D.L.Partin,C.M.Thrush,S.J.Simko,S.W.Gaarenstroom1989J.Appl.Phys 66,6115
[55]G.Springholz,G.Bauer 2007 phys.stat.sol (b) 244,2752
[56]G.Springholz,G.Bauer 1994 J. Appl. Phys77,540
[57]Dmitri V.Talapin,Christopher B.Murray 2005 Science 7,86
[58]Hua Tong,Ying Jie Zhu,Li Xia Yang,Liang Li,Ling Zhang 2006 Angwe.Chem.Int.Ed.45,7739
[59]Melissa Fardy,Allon I.Hochbaum,Joshua Goldberger,Minjuan M.Zhang, Pei dong Yang 2007 Adv.Mater 19,3047
[60]S.H.Wei and Alex Zunger 1997 Phys.Rew.B55,13605
[61]R. Leitsmann and F.Bechstedt,2007 Phys.Rev.B 76,125315
[62]Shu Yuan,Norbert Frank,G.Bauer 1994 Phys.Rev.B 50,5286
[63]W.Z.Shen,K.Wang,L.F.Jiang,X..G.Wang,S.C.Shen,H.Z.Wu,P.J.McCann 2001 Appl. Phys. Lett79,2579
[64]F.F.Sizov,J.V.Gumenjuk-Sichevskaya,V.V.Tetyorkin,V.V.Zabudsky 1995 Acta Physica Pol.A87,441
[65]T.K.Chu,D.Agassi,A.Martinez 1987 Appl. Phys. Lett 50,419
[1]GBinnig,C.F.Quate,1986 Phys.Rev.Lett 56,930
[2]Manne S.et al.1991 J.Vac.Technol.B 9,950
[3]Bustarnante C,et al 1992 Biacherniscry 31,22
[4]Z. G Piosker.1978 Dynamical Scattering of X-ray in Crystals, Springer, Berlin,219
[5]A. Segmuller,1986 Adv. X-ray Anal,29,353
[6]S. J. Miles et al.1988Mater. Letter.7,239
[7]I. C. Bassagnana, C. C. Tann,1989J. Appl. Cryst.22,269
[8]B. K. Tanner, M. A. G. Halliwell,1988 Semicond. Sci. Technol,3,967
[9]M. A. G. Halliwell et al,1989 Semicond. Sci. Technol.4,10
[10]S.N.G.Chu et al.1985J.Appl.Phys,57,249
[11]H.Kim,Y.Kim et al.1988J. Crystal Growth,92,507
[12]P.F. Fcwster.1988 J. Appl. Cryst,21,324
[13]刘文西,黄孝瑛,陈玉如.1989材料结构电子显微分析.天津：天津大学出版社
[14]V.Sanders,1977 Appl.Optics 16,19
[15]O.Arnon,P.W.Baumeister.1978 Appl.Optics 17,2913
[16]王文柱,1988干涉光谱仪,北京,航空出版社
【17】 沈学础,2002半导体光谱与光学性质,科学出版社
[1]H.Holloway, D.K.Hohnke, R.L.Crawley, E.Wikes 1970 J.Vac.Sci.Technol.7, 586
[2]H.Holloway, E.M.Logothetis, E.Wikes 1970 J.Appl.Phys 41,3543
[3]E.M.Logothetis, H.Holloway, A.J.Varga, E.Wikes 1971 Appl. Phys. Lett.19, 318
[4]A.Lambrecht, N.Herres, B.Spanger, S.Kuhn, H.Bottner, M.Tacke 1991 J.Crystal Growth 108,301
[5]M.Rahim, M.Arnold, F.Felder, K.Behfar, H.Zogg 2007 Appl. Phys. Lett.91 151102
[6]A.Lopez-Otero,1978 Thin Solid Films 39,3
[7]G.Springholz, G.Bauer, G.Ihnigner 1993 J.Crystal Growth 127,302
[8]J.C.Snyman, G.Gouws, R.J.Muller 1984 J.Crystal Growth 70,373
[9]J.Fuchs, Z.Feit, H.Preier 1988 Appl. Phys. Lett 53,894
[10]G.Springholz, A.Y Ueta, N. Frank G.Bauer 1996 Appl. Phys. Lett 69,2824
[11]G.Springholz, G.Bauer 1992 Appl. Phys. Lett 60,1600
[12]C.L.Stecker, W.E.Moddeman, J.T.Grant 1981 J.Appl.Phys 52,6921
[13]D.L.Partin 1983 J.Vac.Sci.Technol B 1,174
[14]G. Springholz, V. Holy, M. Pinczolits, G. Bauer 1998 Science282,734.
[15]杨玉琨,杨易,赵斌,吴连民,姜亦忠,刘岩峰1992《发光学报》13,249
[16]P.Pongratz, H.Sitter 1987 J.Crystal Growth 80,73
[17]G.Springholz, G.Bauer, V.Holy 1996 Phys.Rev.B 54,4500
[18]Wu, H. F, Zhang, H. J, Lu, Y. H, Xu, T. N, Si, J. X, Li, H. Y, Bao, S. N., Wu, H. Z, He, P 2006 J.Crystal Growth 294,179
[19]J.P.Liu, Y.T.Wang, H.Yang, D.S.Jiang, U.Jahn, K.H.Ploog 2004 Appl. Phys. Lett 84,5449
[20]Yong Chang, C.R.Becker, C.H.Grein et.al.2008 J.Electronic Materials 37,1171
[21]G.Springholz, G.Bauer 1995 J.Appl.Phys 77,540
[22]W.K.Burton, N.Cabrera,F.C.Frank 1950 Proc.R.Soc.A 243,299
[23]T.N. Xu, H.Z. Wu, J.X Si,2007 Appl.Sur.Sci 253,5457
[24]H.Krenn, E.Koppensteiner, A.Holzinger, A.Voitichek, GBauer, H.Clemens 1992 J.Appl.Phys 72,97
[25]G.Springholz, GBauer 2007 Phys.stat.sol(b) 8,2752
[26]L.S.Palatnik,1983 Structure and Physical Properties of Solids, Vishaya Shkola,Kiev,p.264
[27]J.Stangl, V.Holy, GBauer 2004 Rev.Mod.Phys 76,725
[28]J.Tersoff, F.K.Legoues 1994 Phys.Rev.Lett 72,3570
[29]Dmitri V.Talapin,Christopher B.Murray,2003Scince310,86
[30]Goldstein L, Glas F, Marzin J Y, Charasse M N, LeRoux G 1985 Appl. Phys. Lett.47,1099.
[31]Eaglesham J, Cerullo M 1990 Phys. Rev. Lett.64,1943
[32]M. Pinczolits, GSpringholz, GBauer 1998 Appl. Phys. Lett 73,250
[33]GSpringholz, K.Wiesauer 2002 Phys.Rev.Lett 88,015507
[34]Alchalabi K, Zimin D, Kostorz G, Zogg H 2003 Phys. Rev. Lett 90,026104
[35]A.Raab, GSpringholz 2000 Appl. Phys. Lett 77,2991
[36]Zhenyang Zhong, A.Halilovic,T.Fromherz,F.Schaffler,G.Bauer 2003 Appl. Phys. Lett 82,4776
[37]Y.D.Wang, K.Y.Zang,S.J.Chua,C.G.Fonstad 2006 Appl. Phys. Lett 89, 241922
[38]Yang B,V.K.Tewary 2003 Phys.Rev.B 68,035301
[39]Zhenyang Zhong, A.Halilovic,M.Muhlbeger,F.Schffler,G.Bauer 2003 J.Appl.Phys 93,6258
[40]Hao Hu,H.J Gao, Feng Liu 2008 Phys. Rev. Lett 101,216102
[41]Z.Zhong,O.G.Schmidt,G.Bauer 2005Appl. Phys. Lett 87,133111
[42]T.U.Schulli,G.Vastola,M.I.Richard,A.Malachias,G.Renaud,F.Uhlik,F.Montale nti,GChen,L.Miglio,F.Schaffler,GBauer 2009 Phys. Rev. Lett 102,025502
[43]L.A.Elizondo,Y.Li,A.Sow,R.Kamana,H.Z.Wu,S.Mukherjee,F.Zhao,Z.Shi,P.J. McCann 2007 J.Appl.Phys 101,104505
[44]W.Goltsos,J,Nakahara,A.V.Nurmikko,D.L.Partin 1985 Appl. Phys. Lett 46,1173
[45]I.I.Zasavitskii,E.V.Bushuev,E.A.Andrada-e-Silva,E.Abramof 2002 JETP Letters 75,559
[46]W.W.Anderson,1977 IEEE Quan Elec 13,532
[47]H.Preier et.al 1979 Appl.Phys 20,189
[48]P. J. McCann, K. Namjou,X. M. Fang,1999Appl. Phys. Lett.75,3608
[49]T. Schwarzl, E. Kaufmann, G. Springholz, K. Koike, T. Hotei, M. Yano, W. Heiss 2008 Phys.Rev.B 78,165320
[50]R.Espiau de Lamaestre,H.Bernas,D.Pacifici,G.Franzo,F.Priolo 2006 Appl. Phys. Lett.88,181115
[51]Mitsuaki Yano,Isao Makabe,Kazuto Koike 2004 Physica E 20,449
[52]F.Zhao,X.Lv,A.Majumdar,Z.Shi 2004 Appl. Phys. Lett.84,1251
[1]W.Huber and A.Lopez-otero 1979Thin Solid Films 58,21
[2]Wakio.Uchida, Helmut Sitter,Klaus Lischka,Helmut Heinrich1989 Thin Solid Films 171,271
[3]R.Sporken, S.Sivananthan,K.K.Ma Havadi,G.Monfroy, M.Boukerche, J.P.Faurie 1989 Appl. Phys. Lett.55,1879
[4]Kazuto Koike, Takayoshi Tanaka,Shuwei Li, Mitsuaki Yano 2001 Journal of Crystal Growth,227-228,671
[5]Heiss W, Grosiss H, Kaufmann E,et al.2006 Appl. Phys. Lett.88,192109
[6]R. Leitsmann, F.Bechstedt,2007 Phys.Rev.B 76,125315
[7]Z.Dashevsky, A.Belenchuk,E.Gartstein, O.Shapoval 2004Thin solid films 461,256
[8]A.Dauscher,M.Dinescu,O.M:Boffoue,A.Jacquot, B.Lenoir 2006 Thin solid films 497,170
[9]Springholz G, Ueta A Y, Frank N, et al.1998 Appl. Phys. Lett.69,2822
[10]X.M.Fang,K.Namjou,I Na Chao,P.J.Mccann 2000 J.Vac.Sci.Technol B 18,1720
[11]M.Pinczolits,G.Springholz,G.Bauer 1998 Appl. Phys. Lett.73,250
[12]P.Muller,A.Fach.J.John,A.N.Tiwari,H.Zogg, GKostorz1996 J.Appl.Phys 79,1911
[13]Zogg H 2003 IEEE Transactions On Electron Devices 50,209
[14]K.Kellermann,D.Zimin,K.Alchalbi,N.A.Pikhtin,H.Zogg 2003 IEE Proc.-Optoelectron 150,337
[15]H. Z. Wu, X. M. Fang, R. Salas et al 1999 J. Vac. Sci.& Tech B 17,1263
[16]Xiaohong Li, Iris S.Nandhakumar 2008 Electrochemistry communications 10,263
[17]J.Yoshino,H.Munekata,L.L.Chang1987 J.Vac.Sci.Technol B 5,683
[18]Toshinori Takagi, Hiroshi Takaoika,Youichi Kuriyama 1985Thin Solid Films 126,149
[19]J.Sadowski,M.A.Herman 1995 Journal of Crystal Growth 146,449
[20]K.T.Pollard,A.Erbil,R.Sudharsanan,S.Perkowitz 1992 J Appl.Phys 71,6136
[21]Kazuto Koike,Takayoshi Honden,Isao Makabe, et.al2003. Journal of Crystal Growth 257,212
[22]Antoni Rogalski 2003 Progress in Quantum electronics 27,59
[23]Yukun Yang, Haiyong Chen, Dongmei Li, Dequan Yuan,BingZheng,San Yu, Guangtian Zou 2003 Infrared Physics & Technology 44,299
[24]Bo Zhang,J.He, Terry M.Tritt 2006Appl. Phys. Lett.,88,043119
[25]Taleb Mokari, Minjuan Zhang,Peidong Yang 2007 J.Am.Chem.Soc 129,9864
[26]Springholz G, Frank N,Bauer G 1995 Thin solid films 267,15
[27]Zogg H, Maissen C, Blunier S, et al.1993,Semicond. Sci.Technol.8,S337
[28]Matthews J W 1970 Thin solid films 5,187
[29]Hannon J B, Shenoy V B, Schwarz K W.2006 Science 313,1266
[30]Springholz G, 1997Appl.Sur.Sci.112,12
[31]J.X.Si, H.Z.Wu, T.N.Xu, C.F.Cao, Z.C.Huang,2005Chin.Phys.Lett.22,2353
[32]Lisa Sugiura 1996 J Appl.Phys 81,1633
[33]Yong Chang, C.R.Becker, C.H.Grein et.al. T2008 J.Electronic. Materials 37,1171
[34]Shiv Kumar, A.K. Kapoor, A. Nagpal, S. Sharma, D. Verma, A. Kumar, R. Raman, P.K. Basu,2006J.Crystal Growth 297,311
[35]P.Muller,H.Zogg,A.Fack,J.John,C.Paglino,A.N.Tiwari,M.Krejci 1996 Physical Review Letters78,3007
[36]Springholz G, Bauer G.1995 J Appl.Phys 77,540
[37]T.N. Xu, H.Z. Wu, J.X Si,2007 Appl.Sur.Sci 253,5457
[38]Dimitrios Maroudas,Luis A,Zepeda-Ruiz,W.Henry Weinberg1998 Appl. Phys. Lett 73,753
[39]Dodson B W, Tsao J Y 1987 Appl. Phys. Lett.51,1325
[40]Frank F C, Read W T 1950 Phys. Rev 79,722
[41]Sugiura L 1997 Appl. Phys. Lett.70,1317
[42]R. Leitsmann, F.Bechstedt,2006 Phys.Rev.B 74,085309
[43]杨顺华.1998.《晶体位错理论基础》,(第一卷).北京：科学出版社,第68页、第394页
[44]X.J. Wang, C. Fulk,F.H. Zhao, D.H. Li, S. Mukherjee et.al.2008 Journal. Electronic materials 37,1200
[451 Springholz G, Bauer G.2007 Phys.stat.sol.(b) 244,2752
[46]Manifacier J C, Gasiot J, Fillard J P 1976 J. Phys. E.9,1002
[47]Chen N B,Wu H Z,Xu T N 2005 J. Appl. Phys.97,023515
[48]RobertS.Allgaier 1958 Physical Review 111,1029
[49]E.I.Rogacheva,O.N.Nashchekina,A. V.Merits,S.GLyubchenko 2005 Appl. Phys. Lett.86,063103
[50]G.Grabecki,J.Wrobel, T.Dietl 1999 Phys.Rev.B 60,R5133
[51]A.Almaggossi, A.Abounadi,S.Charar,T.Maurice, G.Breton 2007 Phys.Stat.Sol(a) 204,3496
[52]Matsushita, Y, Bluhm, H, Geballe, T.H, Fisher, I.R,2005. Physical Review Letters,94,157002
[53]Kh Shuichi Murakami,Naoto Nagaosa,,Shou-Cheng Zhang.2004 Physical Review Letters,93,156804
[54]Salameh Ahmad, Kang Hoang, S.D.Mahanti 2006 Physical Review Letters, 96,056403
[55]Kang Hoang, S.D.Mahanti, Puru Jena 2007 Phys.Rev.B 76,115432
[56]A.Almaggossi, A.Abounadi,S.Charar,T.Maurice,R.Viennois,A.Errebbahi and GBreton 2002 Phys.Stat.Sol(a) 191,217
[57]Joseph P.Heremans, Vladimir Jovoic,EricS.Toberer et.al.2008 Science 321,554
[58]Cao Chunfang,Wu Huizhen,Si Jianxiao.et al.2006 Acta Physica Sinica, 55,2021
[1]W. Heiss, H. Groiss, E. Kaufmann, G. Hesser,M. Boberl, G. Springholz and F. Schaffler,2006 Appl. Phys. Lett.88,192109
[2]H. Groiss, E. Kaufmann, G. Springholz, T. Schwarzl, G. Hesser, F. Schaffler, W. Heiss, K. Koike, T. Itakura, T. Hotei, M. Yano andT. Wojtowicz,2007 Appl. Phys. Lett 91,222106
[3]R. Leitsmann and F.Bechstedt,2007 Phys.Rev.B 76,125315
[4]Tinaning Xu, Huizhen Wu, and Jianxiao Si,2007 Phys. Rev. B 76,155328
[5]J.X.Si, H.Z.Wu, T.N.Xu, M L Xia,Q L Wang, W Z Fang, N Dai 2008 Semicond. Sci.Technol.23,125021
[6]Jian-xiao Si, Huizhen Wu,Tianning Xu, Minglong, Xia 2008 Journal Inorganic Materials 23,545
[7]R. Leitsmann,L.E.Ramou and F.Bechstedt,2006 Phys.Rev.B 74,085309
[8]T. Schwarzl, E. Kaufmann, G. Springholz, K. Koike, T. Hotei, M. Yano and W. Heiss 2008 Phys.Rev.B 78,165320
[9]M. Yano, I. Makabe and K. Koike 2004 Physica E 20,449
[10]P. D. C. King, T. D. Veal, P. H. Jefferson and C. F. Mcconville,2007 Appl.Phys.Lett.90,132105
[11]E. A. Kraut, R. W. Grant, J. R. Waldrop and S. P. Kowalczyk,1980 Phys. Rev. Lett.44,1620
[12]E. A. Kraut, R. W. Grant, J. R. Waldrop and S. P. Kowalczyk,1983 Phys.Rev.B 28,1965
[13]Haifei Wu, Hanjie Zhang, Yunhao Lu, Jianxiao Si, H.Y. Li, S.N. Bao, Huizhen Wu, Pimu He,2008 Appl. Phys. Lett,92,122112
[14]F. R. McFeely, S. Kowalczyk, L. Ley, R. A. Pollak and D. A. Shirly,1973 Phys.Rev.B 15,5228
[15]T. M. Duc, C. Hsu and J. P. Faurie,1987 Phys.Rev.Lett.58,1127
[16]S. P. Kowalczyk, J. T. Cheung, E. A. Kraut and R. W. Grant,1986 Phys. Rev. Lett.56,1605
[17]A. Waag, Y. S. Wu, R. N. Bicknell-Tassius, C. Gonser-Buntrock and G Landwehr,1990 J. Appl. Phys.68,212.
[18]G. Brtina, L. Sorba, A. Antonini,G. Ceccone, R.Nicolini, G.Biasiol, A.Franciosi, J.E.Angelo and W.W.Gerberich,1993Phys. Rew. B 48,8899
[19]G.Martin, A.Botchkarev, A.Rockett, H.Morkoc 1996 Appl. Phys. Lett,68, 2541
[20]Chunglin Wu, Hongmao Lee, Chengtai Kuo, Shangjr Gwo and Chiahung Hsu 2007 Appl. Phys. Lett,91,042112
[21]T. E. Cook, Jr., C. C. Fulton, W. J. Mecouch, K. M. Tracy, R. F. Davis, E. H. Hurt, G. Lucovsky, and R. J. Nemanich,2003J. Appl. Phys.93,3995
[22]F. Cerrina, R.R. Daniels, V. Fano,1983 Appl. Phys. Lett.43,182
[23]S. H. Wei and Alex Zunger,1988 Phys. Rev. B 37,8959
[24]S.H.Wei and Alex Zunger 1997 Phys.Rew.B55,13605
[25]S. Yuan, H. Krenn, G. Springholz, and G. Bauer,1993Phys. Rev. B 47,7213
[1]HugoE Romero, Marija Drndic,2005. Physical Review Letters,95,156801
[2]Matsushita. Y, Bluhm. H, Geball. T.H, Fisher. I.R,2005. Physical Review Letters,94,157002
[3]Shi Z, Lv X, Zhao F, Majumdar A, Ray D, Singh R, Yan XJ,2004. Appl.Phys.Lett,85,2999
[4]Robert S.Allgaier, WayneW.Scanlon,1958. Physical Review,111,1029
[5]Zogg.H, Huppi.M,1985. App.Phys.Lett,47,133
[6]Cao C F, Wu H Z, Si J X, Xu T N, Chen,J, Shen,WZ,2006. Acta Physica Sinica.55,2021
[7]Si J X,Wu H Z,Xu T N,Cao C F,Huang Z C,2005. Chin.Phys.Lett.,22:,2352
[8]Springholz.G, Ueta.A.Y, Fran.N,Bauer.G,1996. Appl.Phys.Lett,69,2822
[9]Xu T N, Wu H Z, Si J X, Cao C F,2006 Appl Surf Science,253,5457
[10]Lee T D, Low F E, Pines D,1952. Physical Review,90,297
[11]Yang. A.L, Wu. H.Z, Li Z.F, Qiu.D.J, Chang.Y, Li.J.F, McCann.P.J, Fang.X.F,1999. Chin.Phys.Let,17,606
[12]Chattopad hyay D, Queisser. H. J,1981. Reviews of Modern Physics, 53,745
[13]Hohnke.D.K, Kaiser.S.W,1974. J.Appl.Phys,45,892
[14]Wu H Z, Dai N, McCann, P.J,2002. Phys. Rev. B,66,045303:Zasavitskii I I, Andrada. E. A. De,2004. Phys.Rev.B,70,115302
[15]Martinez G., Schluter M,1974. Phys.Rev.B 11,651
[16]Tetyorkin.V.V, Sipatov.A.Yu, Sizov.F.F, Fedorenko.A.I, Fedorov.A,1996. Infrared Physics & Technology37,379
[17]Dashevsky.Z, Belenchuk.A, Gartstein.E, Shapoval,2004. Thin solid films,46,256
[18]Bardeen.J, Shockley.W,1950. Physical Review,80,72
[19]Aven.M, Segall.B,1963. Physical Review,130,81
[20]Don Berlincourt, Hans Jaffr.,1962. Physical Review,129,1009
[21]Dalemarius Brown, Ralph Bray,1962. Physical Review,127,1593
[22]Chen.J, Shen.WZ,2006. J.Appl.Phys,99,013513
[23]Sergey V Ovsyannikov, Vladimir V Shchennikov,Yuri S Ponosov, Svetlana V Gudina, Vera G Guk,Eugenii P Skipetrov and Viktor E Mogilenskikh,2004. Journal of Physics D-Applied Physics 37,1151
[24]Upadhyaya K S,Yadav M,Upadhyaya G K,2002.Phys.stat.sol.(b)229,1129